Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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PMV20ENR by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 7.6A and power dissipation of 6.94W in enhancement mode. Ideal for applications requiring high-power handling, it operates at temperatures up to 150°C and features surface mount configuration for easy installation.
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N-CHANNEL FETs are known for their high switching speed, making this product ideal for applications requiring fast response times.
A single configuration simplifies the circuit design and can improve the overall reliability of the system.
Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing production costs.
Enhancement mode FETs offer better control over the switching operation and can help improve efficiency in various applications.
With a high maximum drain current rating, this FET can handle heavy loads and is suitable for high-power applications.
The high power dissipation capability ensures that the FET can operate reliably under high load conditions without overheating.
Metal-oxide semiconductor technology provides high input impedance and low output impedance, making this FET suitable for various analog and digital applications.
With a high maximum operating temperature, this FET can withstand harsh environmental conditions and operate reliably in demanding applications.
Power Field Effect Transistors (FET) PMV20ENR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors
Configuration:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
No. of Elements:
Operating Mode:
Maximum Operating Temperature:
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
Surface Mount:
PMV20ENR Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Design/Specification - PMV20/PMPB11 23/Mar/2017
PCN Assembly/Origin - Mult Dev Wafer Test Chgs 4/Feb/2022
PCN Packaging - Logo 10/Dec/2016 All Dev Label Chgs 2/Aug/2020
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
LM358N
Harris Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148
Panjit International
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
Telcom Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
International Components
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;
LL4148
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;
1N4148WT-7
Diodes Incorporated
1N4148WT-7 by Diodes Inc. is a fast recovery rectifier diode with a max reverse recovery time of 0.004 us and a max forward voltage of 1.25 V. It has a package style of small outline, making it suitable for surface mount applications where high-speed switching is required at temperatures ranging from -65 to 150 °C.
1N4148WS
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ROHM
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .6 A;
M24308/2-1F
Air Electro
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; MIL Conformity: YES; Additional Features: STANDARD: MIL-DTL-24308;
BAV99
SPC TECHNOLOGY/ MULTICOMP
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Allegro MicroSystems
SMBJ18CA
Transpro Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Breakdown Voltage: 21.1 V; Maximum Clamping Voltage: 29.2 V;
2N7002
Samsung
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;
Good-ark Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 18 V; Nominal Breakdown Voltage: 21.05 V; Maximum Time At Peak Reflow Temperature (s): 10; JESD-609 Code: e3;
Microsemi
MBRS3200T3G
Onsemi
MBRS3200T3G by Onsemi is a Schottky rectifier diode with a max output current of 3A and a max forward voltage of 0.59V. It operates in temperatures ranging from -65°C to 175°C, making it suitable for power applications. The diode has a peak repetitive reverse voltage of 200V and is designed for surface mount installation in electronic circuits.
LM555CM
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
NXP Semiconductors
Uniohm
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
OPA2277UA/2K5E4
Texas Instruments
OPA2277UA/2K5E4 by Texas Instruments is a dual operational amplifier with low-offset and micropower features. It has a max input offset voltage of 100uV, nominal common mode reject ratio of 140dB, and min slew rate of 0.8V/us. Ideal for industrial applications requiring precise signal amplification in compact designs.
BSZ040N06LS5ATMA1
Infineon Technologies
Infineon's BSZ040N06LS5ATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM, 117mJ EAS, and 0.004 ohm RDS(on). The transistor operates in ENHANCEMENT MODE and has a -55°C Min Operating Temp.
SCT3080KLGC11
ROHM's SCT3080KLGC11 is a N-CHANNEL FET with 1200V DS breakdown voltage and 77A IDM. Ideal for switching applications, it features a single configuration with built-in diode and 0.104 ohm max drain-source resistance.
FDS6982AS
Fairchild Semiconductor
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .0135 ohm; Package Style (Meter): SMALL OUTLINE;
IRLML2030TRPBF
IRLML2030TRPBF by Infineon is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 11A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.1 ohm Drain-Source On Resistance and 12pF Feedback Capacitance.
IRF640STRLPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; No. of Terminals: 2; Case Connection: DRAIN;
FQP27P06
FQP27P06 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 108A IDM, 560mJ EAS, and 0.07 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 120W at 175°C.
AUIRF7316QTR
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.9 A; No. of Terminals: 8;
IRFP4568PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 517 W; Terminal Finish: MATTE TIN OVER NICKEL; Peak Reflow Temperature (C): 250;
IRF7404TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Feedback Capacitance (Crss): 340 pF; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF7507TRPBF
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Pulsed Drain Current (IDM): 19 A; Package Style (Meter): SMALL OUTLINE;
IRFH4251DTRPBF
IRFH4251DTRPBF by Infineon Technologies is a N-CHANNEL Power FET with 25V DS Breakdown Voltage. It features SERIES CONNECTED, CENTER TAP configuration and 120A Max Pulsed Drain Current. Ideal for SWITCHING applications, this transistor has a 0.0046 ohm Max Drain-Source On Resistance and operates in ENHANCEMENT MODE up to 150°C.
IPB200N25N3GATMA1
Infineon's IPB200N25N3GATMA1 is a N-CHANNEL FET with 250V DS breakdown voltage, 0.02 ohm max RDS(on), and 256A IDM. Ideal for switching applications, it operates in enhancement mode with a built-in diode. The transistor features GULL WING terminals, can handle up to 175°C, and has an EAS of 320mJ.
IRFR3710ZTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 140 W; Maximum Drain Current (Abs) (ID): 42 A; Case Connection: DRAIN;
BSC067N06LS3GXT
BSC067N06LS3GXT by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a max IDM of 200A and 0.0067 ohm RDS(on), operating in enhancement mode up to 150°C. This MOSFET comes in a small outline package with built-in diode, suitable for high-power electronic designs.
2N7002BKV
Nexperia
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Terminal Finish: TIN; Reference Standard: AEC-Q101; Qualification: Not Qualified;
IRF9530
Intersil
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Avalanche Energy Rating (EAS): 500 mJ; No. of Elements: 1;
SI4946BEY-T1-E3
Vishay Intertechnology
Vishay Intertechnology's SI4946BEY-T1-E3 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 30A IDM, and 0.041 ohm RDS(ON). Ideal for applications requiring high power dissipation in small outline packages.
FDD7N25LZTM
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
SUD50P04-09L-E3
Vishay Intertechnology's SUD50P04-09L-E3 is a P-channel Power FET with 40V DS breakdown voltage and 100A IDM. Ideal for applications requiring high power dissipation, such as automotive systems or industrial equipment due to its 136W max power dissipation and -55 to 175°C operating temperature range.
BSP230,135
NXP Semiconductors' BSP230,135 is a P-CHANNEL FET with 300V DS breakdown voltage. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With 0.75A max pulsed drain current and 17 ohm max drain-source resistance, this MOSFET can handle various power requirements efficiently.
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PMV20ENR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.94 W; Transistor Element Material: SILICON; Terminal Form: GULL WING;
PMV213SN,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDSO-G3;
PMV213SN,215 by NXP Semiconductors is a single N-channel FET with built-in diode for switching applications. Features include 100V DS breakdown voltage, 7.6A max pulsed drain current, and 0.25 ohm max drain-source resistance. Ideal for enhancement mode operation in small outline packages at temperatures ranging from -55 to 150°C.
PMV20XNEAR
PMV20XNEAR by Nexperia is a N-CHANNEL FET with 20V DS Breakdown Voltage and 25A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, this MOSFET has 0.02 ohm Drain-Source On Resistance.
PMV20EN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.94 W; Maximum Drain Current (ID): 6 A; Operating Mode: ENHANCEMENT MODE;
PMV240SPR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Maximum Drain Current (ID): 1.2 A; JEDEC-95 Code: TO-236AB;
PMV20XNER
PMV20XNER by Nexperia is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 24A and 0.023 ohm Drain-Source On Resistance. With a small outline package style and GULL WING terminals, it operates in an ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.
PMV213SN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .25 ohm; Peak Reflow Temperature (C): 260;
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Moisture Sensitivity Level (MSL): 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PMV213SN by NXP is a single N-channel FET with built-in diode for switching applications. Features include 100V DS breakdown voltage, 7.6A max pulsed drain current, and 0.25 ohm max drain-source resistance. Ideal for power management in various electronic devices.
PMV20XNE
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.94 W; Terminal Form: GULL WING; Maximum Feedback Capacitance (Crss): 85 pF;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.94 W; Terminal Finish: TIN; Operating Mode: ENHANCEMENT MODE;
PMV20XNEA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.94 W; Maximum Pulsed Drain Current (IDM): 25 A; Package Style (Meter): SMALL OUTLINE;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.94 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL;
PMV28ENEAR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; No. of Elements: 1; Terminal Position: DUAL;
PMV20XN
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.17 W; No. of Terminals: 3; JEDEC-95 Code: TO-236AB;
PMV20XN,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.17 W; Reference Standard: IEC-60134; JESD-609 Code: e3;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 4.17 W; Minimum Operating Temperature: -55 Cel; Maximum Drain-Source On Resistance: .025 ohm;
PMV240SP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Maximum Operating Temperature: 175 Cel; Maximum Feedback Capacitance (Crss): 15 pF;
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