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PMV20XN,215

NXP Semiconductors

PMV20XN,215 by NXP Semiconductors

PMV20XN,215 by NXP Semiconductors is an N-channel FET designed for efficient switching applications. It features a max drain current of 4.8 A, a breakdown voltage of 30 V, and operates in enhancement mode. Ideal for compact designs, it comes in a small outline package with built-in diode functionality.

Median Price

$0.387

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 834 parts In-Stock

1+ parts

-

100+ parts

$0.387

1k+ parts

$0.321

10k+ parts

$0.286

834

-

$0.387

$0.321

$0.286

Distributors (In-Stock)

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Digiode

USA . 3,506 parts In-Stock

1+ parts

$0.155

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3,506

$0.155

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Vyrian

USA . 3,107 parts In-Stock

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3,107

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Anansix

USA . 2,478 parts In-Stock

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2,478

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LIBRA Elektronik GmbH

Germany . 887 parts In-Stock

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887

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Corphita

USA . 996 parts In-Stock

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$0.147

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996

$0.147

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Component Stockers USA

USA . 1,195 parts In-Stock

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$0.170

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$0.160

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1,195

$0.170

$0.160

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AZTECH Wire

Italy . 14,154 parts In-Stock

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$0.200

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Microchip USA

USA . 410 parts In-Stock

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$0.729

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410

$0.729

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Kepictronics

USA . 9,560 parts In-Stock

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9,560

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A-Z Elektronik GmbH

Germany . 9,106 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,923 parts In-Stock

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Supply Digital

USA . 807 parts In-Stock

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UNI Independent Distributors

Spain . 500 parts In-Stock

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Overview

Unlock exceptional performance with the PMV20XN,215 from NXP Semiconductors—a trusted leader in innovative solutions. This powerful N-channel FET excels in switching applications, delivering reliable efficiency and durability for your projects. Its compact design ensures seamless integration in space-constrained environments, while advanced thermal management capabilities enable operation in extreme conditions. Elevate your designs with this versatile component, designed to bring quality and value to your applications!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better performance in terms of speed and efficiency, making them ideal for high-speed switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides additional protection in the circuit, enhancing reliability and minimizing component count.

Transistor Application: SWITCHING

Designed specifically for switching applications, this FET can efficiently control power in various electronic devices.

Surface Mount: YES

The surface mount design allows for easier installation in modern compact circuit designs, saving space on the PCB.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor is suitable for a wide range of voltage applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on the PCB and assists in heat dissipation.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering characteristics and mechanical stability, ensuring robust connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for more efficient use of the transistor, providing better control in switching applications.

Maximum Pulsed Drain Current (IDM): 20 A

With a maximum pulsed drain current of 20A, this FET can handle high current surges, making it ideal for robust applications.

Maximum Drain Current (Abs) (ID): 4.8 A

The maximum drain current of 4.8A indicates the ability to handle significant load without thermal issues, making it reliable for power applications.

No. of Terminals: 3

Three terminals make the implementation straightforward and efficient for standard circuit designs, simplifying PCB layout.

Maximum Power Dissipation (Abs): 4.17 W

A power dissipation rating of 4.17W allows this FET to operate effectively without overheating in most circumstances.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables space-saving designs, a crucial factor in modern electronics where board real estate is limited.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology provides excellent switching characteristics and high efficiency, ideal for fast-switching applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C ensures that the FET can be used in high-heat environments without performance degradation.

Transistor Element Material: SILICON

Silicon as a material is widely recognized for its semiconductor properties, ensuring reliable operation and longevity.

Minimum Operating Temperature: -55 °C

The ability to function at -55 °C makes this FET suitable for harsh environments, such as aerospace or automotive applications.

Terminal Finish: TIN

A tin terminal finish ensures good solderability, enhancing the ease of assembly in manufacturing.

Maximum Drain-Source On Resistance: 0.025 ohm

Low on-resistance translates to better efficiency and less heat generation during operation, contributing to overall system performance.

Terminal Position: DUAL

Dual terminal positioning allows for enhanced flexibility in circuit design, accommodating multiple layout configurations.

Maximum Time At Peak Reflow Temperature: 30 s

The capability of withstanding a peak reflow temperature time of 30 seconds ensures compatibility with automated soldering processes.

Peak Reflow Temperature: 260 °C

A peak reflow temperature of 260 °C guarantees that the component can survive high-temperature soldering processes without damage.

Maximum Feedback Capacitance (Crss): 55 pF

Low feedback capacitance provides improved frequency response, making this FET suitable for high-speed applications.

Reference Standard: IEC-60134

Adhering to IEC-60134 ensures that this FET meets international quality and reliability standards, providing assurance to manufacturers.

Technical Specifications

Power Field Effect Transistors (FET) PMV20XN,215 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4.8 A

Maximum Drain Current (ID):

4.8 A

Maximum Drain-Source On Resistance:

.025 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

55 pF

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

20 A

Reference Standard:

IEC-60134

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMV20XN,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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