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FQD12N20LTM-F085

Onsemi

FQD12N20LTM-F085 by Onsemi

FQD12N20LTM-F085 by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 9A, Max Pulsed Drain Current of 36A, and Max Power Dissipation of 55W. This ENHANCEMENT MODE transistor operates b/w -55 to 150 °C and has a fast turn on/off time for efficient performance.

Median Price

$0.539

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 55,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.457

55,000

-

-

-

$0.457

Mouser Electronics

USA . 13,110 parts In-Stock

1+ parts

-

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$0.457

13,110

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-

-

$0.457

Rochester

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.621

1k+ parts

$0.515

10k+ parts

$0.459

2,500

-

$0.621

$0.515

$0.459

Verical

USA . 2,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.644

10k+ parts

$0.574

2,300

-

-

$0.644

$0.574

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 94 parts In-Stock

1+ parts

$0.618

100+ parts

-

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94

$0.618

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Chip Stock

USA . 29,400 parts In-Stock

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29,400

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Vyrian

USA . 20,050 parts In-Stock

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20,050

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Digiode

USA . 1,688 parts In-Stock

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1,688

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Distributors (Availability)

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Ampacity Inc.

Singapore . 67,492 parts In-Stock

1+ parts

$0.388

100+ parts

-

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67,492

$0.388

-

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Semicontronic

India . 34,029 parts In-Stock

1+ parts

$0.388

100+ parts

$0.378

1k+ parts

$0.376

10k+ parts

-

34,029

$0.388

$0.378

$0.376

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Corohmni

South Africa . 58 parts In-Stock

1+ parts

$0.457

100+ parts

-

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58

$0.457

-

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Aranea Global

USA . 200 parts In-Stock

1+ parts

$0.606

100+ parts

-

1k+ parts

$0.581

10k+ parts

-

200

$0.606

-

$0.581

-

Continental Prestige Electronics

USA . 5,226 parts In-Stock

1+ parts

$0.618

100+ parts

-

1k+ parts

-

10k+ parts

$0.606

5,226

$0.618

-

-

$0.606

Argo Parts USA

USA . 3,045 parts In-Stock

1+ parts

$0.618

100+ parts

-

1k+ parts

-

10k+ parts

$0.599

3,045

$0.618

-

-

$0.599

Advanced Electronics

New Zealand . 270 parts In-Stock

1+ parts

$0.629

100+ parts

$0.598

1k+ parts

$0.598

10k+ parts

-

270

$0.629

$0.598

$0.598

-

Modulus Dynamics

Lithuania . 650 parts In-Stock

1+ parts

$0.678

100+ parts

$0.671

1k+ parts

$0.651

10k+ parts

-

650

$0.678

$0.671

$0.651

-

Aztec Data Supply Inc.

USA . 1,443 parts In-Stock

1+ parts

$1.840

100+ parts

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1,443

$1.840

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Microchip USA

USA . 124 parts In-Stock

1+ parts

$3.380

100+ parts

$3.370

1k+ parts

$3.370

10k+ parts

$3.360

124

$3.380

$3.370

$3.370

$3.360

Perfect Parts

USA . 792,662 parts In-Stock

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792,662

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iodParts Technologies Inc.

India . 788,312 parts In-Stock

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788,312

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RC Electronics

USA . 68,160 parts In-Stock

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68,160

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Kepictronics

USA . 18,000 parts In-Stock

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18,000

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Problanco Electronics

Mexico . 8,153 parts In-Stock

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Lixinc

USA . 6,528 parts In-Stock

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6,528

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Authorized Procurement Solutions

USA . 6,500 parts In-Stock

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6,500

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SupplyDigital Components

Austria . 5,573 parts In-Stock

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5,573

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TANS Electronics

Latvia . 2,718 parts In-Stock

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2,718

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Supply Digital

USA . 2,389 parts In-Stock

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2,389

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Corphita

USA . 1,506 parts In-Stock

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1,506

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Kulean Microsystems

USA . 984 parts In-Stock

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984

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UHIMA Technologies

Türkiye . 753 parts In-Stock

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753

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Overview

Discover the FQD12N20LTM-F085 by Onsemi, a top-quality Power Field Effect Transistor with N-CHANNEL polarity and built-in diode. Ideal for switching applications, this transistor offers enhanced performance and reliability. With a maximum power dissipation of 55W and a minimum DS breakdown voltage of 200V, this product ensures efficient operation in various scenarios. Trust Onsemi's expertise in semiconductor technology to deliver cutting-edge solutions that meet your needs. Upgrade your systems with the FQD12N20LTM-F085 and experience the superior value it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this FET lightweight and resistant to impact and harsh environments, making it a durable choice.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their high efficiency and fast switching speeds, making this product suitable for applications requiring quick response times.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode in this FET simplifies circuit design by providing protection against reverse voltages, making it a convenient and cost-effective solution.

Transistor Application: SWITCHING

Designed for switching applications, this FET is capable of handling high current levels with low power dissipation, increasing efficiency in power management systems.

Surface Mount: YES

With surface mount capability, this FET can be easily integrated onto PCBs, saving space and simplifying the assembly process in electronic devices.

Minimum DS Breakdown Voltage: 200 V

The high minimum breakdown voltage of 200V ensures reliable operation in high-voltage applications, making this FET suitable for power supply and motor control systems.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient heat dissipation, ensuring stable performance even under high operating temperatures, enhancing reliability.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections during assembly, reducing the risk of solder joint failure and improving overall product longevity.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode, this FET offers precise control over the switching characteristics, making it ideal for applications that require high-speed operation and low power consumption.

No. of Elements: 1

This FET consists of a single element, simplifying circuit design and reducing component count, making it a cost-effective and space-saving solution.

Technical Specifications

Power Field Effect Transistors (FET) FQD12N20LTM-F085 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

200 V

Maximum Drain Current (Abs) (ID):

9 A

Maximum Drain Current (ID):

9 A

Maximum Drain-Source On Resistance:

.32 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

22 pF

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

36 A

Qualification:

Not Qualified

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

380 ns

Maximum Turn On Time (ton):

430 ns

Trade Compliance

FQD12N20LTM-F085 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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