Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTP52N10
Onsemi
NTP52N10 by Onsemi is a Power FET with 100V DS Breakdown Voltage, 156A IDM, and 0.03 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. The package style is FLANGE MOUNT with SILICON element material and 150 °C max operating temp.
800 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
52 A
60 A
.03 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e0
1
3
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
235
N-CHANNEL
178 W
156 A
Not Qualified
FET General Purpose Power
NO
TIN LEAD
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
NTB90N02
NTB90N02 by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features 0.0058 ohm RDS(on) and 733mJ EAS rating. The PLASTIC/EPOXY package with GULL WING terminals operates at up to 150 °C, making it suitable for high-power circuits.
733 mJ
24 V
90 A
.0058 ohm
R-PSSO-G2
2
SMALL OUTLINE
85 W
200 A
YES
GULL WING
NTB18N06LT4G
NTB18N06LT4G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A IDM, and 0.1 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating at 175 °C max temp, it offers high power dissipation of 48.4W in a SMALL OUTLINE package.
LOGIC LEVEL COMPATIBLE
61 mJ
60 V
15 A
.1 ohm
e3
175 Cel
260
48.4 W
45 A
TIN
30
NTHC5513T1
NTHC5513T1 by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations, ideal for SWITCHING applications. Features include 20V DS Breakdown Voltage, 10A IDM, and 0.08 ohm RDS(on). With 2 elements in a RECTANGULAR package, it operates at up to 150 °C for various electronic designs.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
2.1 A
3.1 A
.08 ohm
R-XDSO-C8
8
UNSPECIFIED
N-CHANNEL AND P-CHANNEL
1.1 W
10 A
Other Transistors
C BEND
DUAL
NTB65N02R
NTB65N02R by Onsemi is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0105 ohm RDS(on), and 78W Pdiss. Suitable for surface mount with GULL WING terminals, this MOSFET operates in ENHANCEMENT MODE up to 150 °C.
60 mJ
25 V
65 A
7.6 A
.0105 ohm
78 W
160 A
NTP65N02R
NTP65N02R by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 160A IDM, and 0.0105 ohm RDS(on). Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package style: FLANGE MOUNT, operating temp: 150 °C, and EAS of 60mJ make it suitable for high-power tasks.
NTD60N02RT4
NTD60N02RT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 32A Drain Current, and 0.0105 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 48W at 150 °C.
32 A
48 W
NTD60N02R
NTD60N02R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 32A Drain Current, and 0.0105 ohm On Resistance. This ENHANCEMENT MODE transistor has a 48W Power Dissipation rating and operates up to 150 °C, making it ideal for high-power electronic circuits.
NTHS2101PT1
NTHS2101PT1 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features 8V DS Breakdown Voltage, 5.4A Drain Current, and 0.025 ohm On Resistance. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 1.3W in a SMALL OUTLINE package style.
8 V
5.4 A
.025 ohm
P-CHANNEL
1.3 W
7.5 A
NTMC1300R2
The Onsemi NTMC1300R2 is a Power FET with N-CHANNEL and P-CHANNEL polarity, ideal for SWITCHING applications. It features 30V DS Breakdown Voltage, 8.5A Max IDM, and 0.09ohm RDS(ON). With a compact 8-terminal GULL WING package, it operates in ENHANCEMENT MODE up to 150 °C.
75 mJ
30 V
1.8 A
2.2 A
.09 ohm
R-PDSO-G8
2 W
8.5 A
NTMD2C02R2
NTMD2C02R2 by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL polarity. It features 20V DS Breakdown Voltage, 48A IDM, and 0.043 ohm RDS(ON). Ideal for SWITCHING applications, this transistor has a max operating temperature of 150 °C and comes in an 8-terminal GULL WING package.
5.2 A
.043 ohm
48 A
NTMSD6N303R2
NTMSD6N303R2 by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 6A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 30A Pulsed Drain Current, and 0.032 ohm On Resistance. Suitable for surface mount with GULL WING terminals, it operates in ENHANCEMENT MODE up to 150 °C.
325 mJ
6 A
.032 ohm
30 A
NTD25P03L1
NTD25P03L1 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 75A IDM, 200mJ EAS, and 0.08 ohm RDS(ON). With a max power dissipation of 75W and operating temperature up to 150 °C, it's suitable for various ENHANCEMENT MODE switching tasks.
200 mJ
25 A
R-PSIP-T3
IN-LINE
75 W
75 A
NTD25P03LT4
NTD25P03LT4 by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 75A IDM, and 0.08 ohm RDS(on). Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE at up to 150 °C.
NTY100N10
NTY100N10 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 369A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications due to its 313W Pdiss, EAS of 500mJ, and ENHANCEMENT MODE operation. Package style is IN-LINE with TIN LEAD finish for THROUGH-HOLE mounting.
500 mJ
123 A
.01 ohm
TO-264AA
313 W
369 A
NTB125N02RT4
NTB125N02RT4 by Onsemi is a N-CHANNEL Power FET with 25V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 250A, EAS of 120mJ, and ID of 15.9A. With 0.0062 ohm RDS(on), it operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for high-power requirements.
120 mJ
15.9 A
95 A
.0062 ohm
113.6 W
250 A
NTB125N02R
NTB125N02R by Onsemi is a N-CHANNEL Power FET with 25V DS Breakdown Voltage, 250A IDM, and 0.0062 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. The transistor has a max power dissipation of 113.6W and operates at up to 150 °C temperature.
NTD23N03R
NTD23N03R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 40A Max IDM, and 0.06 ohm Max RDS(on). The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 22.3W, making it ideal for high-power switching circuits.
3.8 A
.06 ohm
22.3 W
40 A
NTD85N02RT4
NTD85N02RT4 by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max drain current of 85A, min DS breakdown voltage of 24V, and max pulsed drain current of 192A. This MOSFET operates in enhancement mode with a max operating temperature of 150 °C, making it suitable for high-power applications.
85 mJ
12 A
85 A
.0052 ohm
78.1 W
192 A
NTD85N02R
NTD85N02R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 192A IDM, and 0.0052 ohm Drain-Source Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 78.1W, making it ideal for high-power switching circuits.
NTMS4101PR2
NTMS4101PR2 by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 30A and ID of 6.9A, with 0.019 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE at up to 150 °C, making it suitable for various power management needs.
6.9 A
.019 ohm
1.38 W
NTB23N03R
NTB23N03R by Onsemi is a N-CHANNEL Power FET with 25V DS Breakdown Voltage and 6A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.06 ohm On Resistance, and operates in ENHANCEMENT MODE. The transistor has GULL WING terminals, can handle up to 60A Pulsed Drain Current, and withstands temperatures up to 150 °C.
NTB75N03RT4
NTB75N03RT4 by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 225A IDM, and 0.013 ohm RDS(on). Ideal for SWITCHING applications due to its 74.4W power dissipation and ENHANCEMENT MODE operation. Features GULL WING terminals in a RECTANGULAR package style.
71.7 mJ
9.7 A
.013 ohm
74.4 W
225 A
NTD110N02RT4
NTD110N02RT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). With a max power dissipation of 92.5W and operating temperature up to 150 °C, it is ideal for high-power electronic systems.
12.5 A
92.5 W
110 A
NTD110N02R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e0;
NTD14N03R
NTD14N03R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 11.4A, Max Pulsed Drain Current of 28A, and Min DS Breakdown Voltage of 25V. This MOSFET operates in ENHANCEMENT MODE and has a Max Operating Temperature of 150 °C.
11.4 A
.13 ohm
20.8 W
28 A
NTD40N03RT4
NTD40N03RT4 by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max drain current of 32A, min DS breakdown voltage of 25V, and max pulsed drain current of 100A. This MOSFET operates in enhancement mode with a package style of small outline, making it suitable for high-power applications requiring efficient switching capabilities.
.023 ohm
41.7 W
100 A
NTL4502NT1
NTL4502NT1 by Onsemi is a N-CHANNEL FET with 4 separate elements, built-in diode, and 24V DS breakdown voltage. Ideal for switching applications, it has a max pulsed drain current of 32A and 0.013 ohm max drain-source resistance. Operating in enhancement mode, it features a peak reflow temp of 235 °C and can handle up to 11.4A drain current.
80 mJ
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
S-XQCC-N16
4
16
SQUARE
CHIP CARRIER
FET General Purpose Powers
NO LEAD
QUAD
NTD14N03RT4
NTD14N03RT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 11.4A Drain Current, and 0.13 ohm On Resistance. With a max power dissipation of 20.8W and operating temperature up to 150 °C, it is ideal for high-performance electronic devices requiring efficient power management in compact designs.
NTB25P06
The Onsemi NTB25P06 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 600mJ EAS, and 0.082 ohm RDS(on). The PLASTIC/EPOXY package with GULL WING terminals operates at up to 150 °C, making it suitable for high-power circuits.
600 mJ
27.5 A
.082 ohm
100 W
80 A
NTHD2102PT1
NTHD2102PT1 by Onsemi is a P-CHANNEL FET with 2 elements, built-in diode, and 0.058 ohm RDS(on). Ideal for switching applications with 3.4A max drain current and 8V min DS breakdown voltage. Features small outline package style and operates in enhancement mode.
3.4 A
.058 ohm
2.1 W
4.6 A
NID9N05CLT4
NID9N05CLT4 by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 52V, max pulsed drain current of 35A, and max power dissipation of 28.8W. This MOSFET operates in enhancement mode with a max operating temperature of 175 °C, making it suitable for high-power switching applications.
ESD PROTECTED
160 mJ
52 V
9 A
.181 ohm
28.8 W
35 A
NID9N05CL
NID9N05CL by Onsemi is a Power FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE, this FET has a max power dissipation of 28.8W and can withstand temperatures up to 175 °C.
NTD2955-1G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Transistor Element Material: SILICON; Package Style (Meter): IN-LINE;
216 mJ
.18 ohm
55 W
36 A
MATTE TIN
NTD2955G
NTD2955G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 36A IDM, and 0.18 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 55W. The transistor has a SILICON element material and can withstand temperatures up to 175°C.
NTD20P06L-1G
NTD20P06L-1G by Onsemi is a P-channel power FET with 60V DS breakdown voltage and 15.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. The transistor has a 0.15 ohm max drain-source resistance and can handle up to 50A pulsed drain current.
304 mJ
15.5 A
.15 ohm
54 W
50 A
NTD20P06LG
NTD20P06LG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 50A and EAS of 304mJ, operating in ENHANCEMENT MODE. With a Drain Current of 15.5A and 0.15 ohm RDS(on), it offers high performance in a SMALL OUTLINE package for various power applications.
-55 Cel
NIF9N05CLT1
NIF9N05CLT1 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 52V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.125 ohm Max Drain-Source Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max temp of 150 °C, making it ideal for various power control circuits.
110 mJ
SINGLE WITH BUILT-IN DIODE AND RESISTOR
2.6 A
.125 ohm
TO-261AA
R-PDSO-G4
1.69 W
Tin/Lead (Sn/Pb)
NIF9N05CLT3
NIF9N05CLT3 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 52V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.125 ohm Max Drain-Source Resistance. Ideal for use in circuits requiring high power dissipation and efficient switching capabilities.
NTR4501NT1
NTR4501NT1 by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a max drain current of 3.2A, operating in enhancement mode with a max power dissipation of 1.25W. With a small outline package style and peak reflow temperature of 235 °C, it offers efficient performance in various electronic devices.
3.2 A
TO-236AB
R-PDSO-G3
1.25 W
Tin/Lead (Sn80Pb20)
NTR4501NT3G
NTR4501NT3G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. Ideal for use in small outline packages where high power dissipation and low on-resistance are required.
NTR4501NT3
NTR4501NT3 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 10A Max Pulsed Drain Current, and 0.08 ohm Max Drain-Source Resistance. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at up to 150 °C, making it ideal for various power management tasks.
NTLUS4195PZTBG
NTLUS4195PZTBG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 17A IDM. Ideal for SWITCHING applications, it features 0.09 ohm RDS(ON) and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has SILICON element material and TIN terminal finish.
2 A
S-PDSO-N3
17 A
NTTFS4821NTAG
NTTFS4821NTAG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 171A Pulsed Drain Current, and 0.0108 ohm Drain-Source On Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 38.5W, making it ideal for high-power switching circuits.
55 mJ
57 A
13.5 A
.0108 ohm
S-PDSO-N5
5
38.5 W
171 A
NTTFS4821NTWG
NTTFS4821NTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 171A IDM, and 0.0108 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications in a SQUARE package with 5 terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 38.5W and can handle up to 150 °C temperature.
NOT SPECIFIED
Tin (Sn)
NTHD4502NT1G
NTHD4502NT1G by Onsemi is a Power FET with N-CHANNEL polarity, 30V DS breakdown voltage, and 12A max pulsed drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package style. Operating from -55 to 150 °C, this MOSFET has 0.085 ohm max on-resistance and 22ns turn-on time.
2.9 A
.085 ohm
25 pF
R-PDSO-F8
1.13 W
FLAT
30 ns
22 ns
NTD40N03R-1G
NTD40N03R-1G by Onsemi is a power FET with a min DS breakdown voltage of 25V and max drain current of 32A. It is commonly used for switching applications due to its single configuration with built-in diode.
NTD40N03RG
NTD40N03RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 32A, Max Pulsed Drain Current of 100A, and Min DS Breakdown Voltage of 25V. With a package style of SMALL OUTLINE and operating temperature up to 150 °C, it is ideal for high-power switching circuits.
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