Loading...

NID9N05CL

Onsemi

NID9N05CL by Onsemi

NID9N05CL by Onsemi is a Power FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE, this FET has a max power dissipation of 28.8W and can withstand temperatures up to 175 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,547 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,547

-

-

-

-

Digiode

USA . 625 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

625

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 1,090 parts In-Stock

1+ parts

$12.750

100+ parts

-

1k+ parts

-

10k+ parts

-

1,090

$12.750

-

-

-

Kepictronics

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,000

-

-

-

-

SupplyDigital Components

Austria . 6,964 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,964

-

-

-

-

Problanco Electronics

Mexico . 6,678 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,678

-

-

-

-

TANS Electronics

Latvia . 6,613 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,613

-

-

-

-

Kulean Microsystems

USA . 4,637 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,637

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

UHIMA Technologies

Türkiye . 785 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

785

-

-

-

-

Corohmni

South Africa . 385 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

385

-

-

-

-

Corphita

USA . 170 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

170

-

-

-

-

Vigor

Singapore . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

150

-

-

-

-

Microchip USA

USA . 113 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

113

-

-

-

-

Overview

Enhance your power switching applications with the NID9N05CL by Onsemi. This high-quality N-channel Power FET offers a single configuration with a built-in diode, providing efficient performance and reliability. With a minimum DS breakdown voltage of 52V and a maximum drain current of 9A, this transistor is perfect for a wide range of switching applications. Trust in Onsemi's expertise and innovation to deliver superior products that meet your needs. Upgrade your projects with the NID9N05CL and experience enhanced functionality and value like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor, making it suitable for various environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are commonly used in high-power applications and offer better performance compared to P-channel transistors.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection, adding an extra layer of reliability to the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance and operation.

Surface Mount: YES

SMT technology allows for easy and convenient installation on PCBs, saving space and simplifying the manufacturing process.

Minimum DS Breakdown Voltage: 52 V

Provides a high breakdown voltage, allowing the transistor to handle high voltages without failing.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and secure the transistor on a circuit board.

Terminal Form: GULL WING

Gull wing terminals provide a strong and reliable connection, ensuring stable electrical performance.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer fast switching speeds and low on-resistance, making them suitable for high-frequency applications.

Maximum Pulsed Drain Current (IDM): 35 A

High pulsed drain current rating allows the transistor to handle brief current spikes without damage.

Avalanche Energy Rating (EAS): 160 mJ

High avalanche energy rating indicates the transistor's ability to withstand voltage spikes and transient events.

Maximum Drain Current (Abs) (ID): 9 A

The high drain current rating ensures the transistor can handle continuous current flow without overheating.

No. of Terminals: 2

Two terminals provide a simple interface for connecting the transistor to external circuitry.

Maximum Power Dissipation (Abs): 28.8 W

High power dissipation capability allows the transistor to handle large amounts of power without thermal issues.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on the PCB, making it suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers low on-resistance and high switching speeds, ensuring efficient performance.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range allows the transistor to operate in demanding environments.

Transistor Element Material: SILICON

Silicon transistors are reliable and widely used in electronic devices due to their high performance and durability.

Terminal Finish: TIN LEAD

Tin-lead finish provides corrosion resistance and ensures a secure electrical connection.

Maximum Drain-Source On Resistance: 0.181 ohm

Low on-resistance minimizes power losses and improves the efficiency of the transistor.

Terminal Position: SINGLE

Single terminal position simplifies the installation process and ensures correct orientation on the PCB.

Case Connection: DRAIN

Drain connection allows for efficient current flow and heat dissipation, ensuring reliable performance.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time minimizes thermal stress on the components during the assembly process.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures proper soldering and connection on the PCB.

Technical Specifications

Power Field Effect Transistors (FET) NID9N05CL attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

ESD PROTECTED

Avalanche Energy Rating (EAS):

160 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

52 V

Maximum Drain Current (Abs) (ID):

9 A

Maximum Drain Current (ID):

9 A

Maximum Drain-Source On Resistance:

.181 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

35 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NID9N05CL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 6