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NID9N05BCLT4G

Onsemi

NID9N05BCLT4G by Onsemi

NID9N05BCLT4G by Onsemi is a single N-channel FET with built-in diode and resistor, ideal for switching applications. It features a min DS breakdown voltage of 52V, max pulsed drain current of 35A, and max operating temperature of 175 °C. This MOSFET has a package style of small outline and terminal finish of matte tin, making it suitable for high-power applications.

Median Price

$0.510

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 14,990 parts In-Stock

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$0.510

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$0.480

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$0.434

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14,990

$0.510

$0.480

$0.434

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Distributors (In-Stock)

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Digiode

USA . 808 parts In-Stock

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$0.484

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808

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Flip Electronics

USA . 8,000 parts In-Stock

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Vyrian

USA . 7,128 parts In-Stock

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Corphita

USA . 1,103 parts In-Stock

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$0.459

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Corohmni

South Africa . 327 parts In-Stock

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$0.510

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327

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Vigor

Singapore . 813 parts In-Stock

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$1.220

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813

$1.220

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AZTECH Wire

Italy . 693 parts In-Stock

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$15.510

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693

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QUARKTWIN TECHNOLOGY LTD

USA . 27,477 parts In-Stock

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Kulean Microsystems

USA . 7,630 parts In-Stock

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SupplyDigital Components

Austria . 4,552 parts In-Stock

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TANS Electronics

Latvia . 2,353 parts In-Stock

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Problanco Electronics

Mexico . 915 parts In-Stock

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UHIMA Technologies

Türkiye . 412 parts In-Stock

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Microchip USA

USA . 329 parts In-Stock

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Overview

Unleash the power of efficient switching with the NID9N05BCLT4G by Onsemi. Crafted with precision and reliability in mind, this N-CHANNEL Power Field Effect Transistor offers seamless operation for a variety of applications. With a built-in diode and resistor, this transistor delivers unparalleled performance with a maximum drain current of 9A and a minimum DS breakdown voltage of 52V. Trust Onsemi's expertise in semiconductor technology to bring you a product that not only meets but exceeds your expectations. Upgrade your projects with the NID9N05BCLT4G and experience the difference in quality and efficiency today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have faster switching speeds and lower on-resistance, making them efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify the circuit design and save space, making it convenient for use in compact electronic devices.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in control circuits.

Surface Mount: YES

Suitable for surface mount technology, making it easy to integrate into PCBs and saving assembly time.

Minimum DS Breakdown Voltage: 52 V

With a high breakdown voltage, this transistor can handle higher voltages without damage, ensuring reliability in demanding conditions.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement on PCBs and facilitates heat dissipation, improving overall performance.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and ease of soldering during assembly, ensuring a reliable electrical connection.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and easy control of the output, making them ideal for digital circuit applications.

Maximum Pulsed Drain Current (IDM): 35 A

With a high pulsed drain current rating, this transistor can handle peak current demands, making it suitable for high-power applications.

Technical Specifications

Power Field Effect Transistors (FET) NID9N05BCLT4G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

160 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

52 V

Maximum Drain Current (Abs) (ID):

9 A

Maximum Drain Current (ID):

9 A

Maximum Drain-Source On Resistance:

.181 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

40 pF

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

35 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3850 ns

Maximum Turn On Time (ton):

950 ns

Trade Compliance

NID9N05BCLT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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