Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTB90N02G
Onsemi
NTB90N02G by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage, 200A IDM, and 0.0058 ohm RDS. Ideal for SWITCHING applications due to its 85W Pdiss, EAS of 733mJ, and -55 °C to +150°C operating temp range. Package style: SOIC with Gull Wing terminals.
733 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
24 V
90 A
.0058 ohm
METAL-OXIDE SEMICONDUCTOR
R-PSSO-G2
e3
1
2
ENHANCEMENT MODE
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
85 W
200 A
Not Qualified
FET General Purpose Power
YES
TIN
GULL WING
SINGLE
SWITCHING
SILICON
NTB90N02T4G
NTB90N02T4G by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage, 200A IDM, and 0.0058 ohm RDS. It's used for SWITCHING applications due to its 85W Pdiss, 733mJ EAS, and ENHANCEMENT MODE operation.
30
NTD18N06G
NTD18N06G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A Drain Current, and 0.06 ohm On Resistance. Ideal for SWITCHING applications, this N-CHANNEL transistor operates in ENHANCEMENT MODE with a max power dissipation of 1.5W in a small outline package style.
72 mJ
60 V
18 A
.06 ohm
175 Cel
1.5 W
54 A
NTD18N06T4G
NTD18N06T4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A Drain Current, and 0.06 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and a built-in DIODE in a PLASTIC/EPOXY package.
NTD20N06LG
NTD20N06LG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.048 ohm On Resistance. Ideal for SWITCHING applications, this N-CHANNEL transistor operates in ENHANCEMENT MODE with a max power dissipation of 60W.
128 mJ
20 A
.048 ohm
60 W
60 A
NTD24N06LG
NTD24N06LG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 24A Drain Current, and 0.045 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 175 °C.
LOGIC LEVEL COMPATIBLE
162 mJ
24 A
.045 ohm
-55 Cel
1.36 W
72 A
NTD30N02G
NTD30N02G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 30A Drain Current, and 0.0145 ohm On Resistance. With a max power dissipation of 75W and operating temperature of 150 °C, it is ideal for high-power switching circuits.
50 mJ
30 A
.0145 ohm
75 W
100 A
NTD32N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 93.75 W; Maximum Drain-Source On Resistance: .028 ohm; Avalanche Energy Rating (EAS): 313 mJ;
313 mJ
32 A
.028 ohm
93.75 W
NTMD2C02R2G
NTMD2C02R2G by Onsemi is a Power FET with N/P-Channel, 2 elements w/ diode. It has a max drain current of 5.2A, 0.043 ohm RDS(on), and 48A pulsed drain current. Ideal for switching applications in small outline packages, operating at up to 150 °C peak reflow temp.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
5.2 A
.043 ohm
R-PDSO-G8
8
N-CHANNEL AND P-CHANNEL
2 W
48 A
Other Transistors
DUAL
NTMD2P01R2G
NTMD2P01R2G by Onsemi is a P-CHANNEL FET with 16V DS breakdown voltage, 9A IDM, and 0.1 ohm RDS(on). It's used for switching applications in small outline packages with 8 terminals.
350 mJ
16 V
2.3 A
.1 ohm
P-CHANNEL
.71 W
9 A
Tin (Sn)
40
NTMSD6N303R2G
NTMSD6N303R2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 6A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 30A Pulsed Drain Current, and 0.032 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 2W and can withstand temperatures up to 150 °C.
325 mJ
30 V
6 A
.032 ohm
3
NTP30N20G
NTP30N20G by Onsemi is a Power FET with 200V DS Breakdown Voltage, 90A IDM, and 0.081 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON transistor element material.
AVALANCHE RATED
450 mJ
200 V
.081 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
178 W
NO
THROUGH-HOLE
NTP35N15G
NTP35N15G by Onsemi is a Power FET with 150V DS Breakdown Voltage, 37A Drain Current, and 0.05 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and 111A Pulsed Drain Current. The transistor has a max power dissipation of 178W and operates at temperatures up to 150 °C.
700 mJ
150 V
37 A
.05 ohm
111 A
NTP75N03RG
NTP75N03RG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 225A IDM, and 0.013 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 74.4W at 150 °C.
71.7 mJ
25 V
9.7 A
75 A
.013 ohm
74.4 W
225 A
NTP90N02G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
NTQD6968NR2G
NTQD6968NR2G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 18A IDM, and 0.03 ohm RDS(on). Commonly used for SWITCHING applications due to its COMMON DRAIN configuration. It comes in a small outline package with GULL WING terminals.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
7 A
6.2 A
.03 ohm
1.8 W
NTD50N03R-1G
NTD50N03R-1G by Onsemi is a Power FET with 25V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Features a SINGLE package with BUILT-IN DIODE in RECTANGULAR shape.
20 mJ
7.8 A
.014 ohm
R-PSIP-T3
IN-LINE
180 A
NTD50N03R-35G
NTD50N03R-35G by Onsemi is a Power FET with 25V DS Breakdown Voltage, 180A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration with a built-in diode. The transistor operates in ENHANCEMENT MODE and has a SILICON element material.
NTD50N03RT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 25 V; JESD-609 Code: e3;
NTD50N03RT4
NTD50N03RT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Pulsed Drain Current of 180A, Min DS Breakdown Voltage of 25V, and Max Drain Current of 7.8A. The transistor has a built-in diode and operates in ENHANCEMENT MODE, making it ideal for high-power switching circuits.
e0
235
TIN LEAD
NTD50N03R
NTD50N03R by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Drain Current of 7.8A, Max Pulsed Drain Current of 180A, and Min DS Breakdown Voltage of 25V. The transistor is in ENHANCEMENT MODE and has a built-in DIODE, making it ideal for high-power switching circuits.
NTD6600NT4G
NTD6600NT4G by Onsemi is an N-CHANNEL Power FET with 100V DS Breakdown Voltage and 44A IDM. Ideal for SWITCHING applications, it features a 0.146 ohm Drain-Source Resistance and 72mJ Avalanche Energy Rating. Suitable for ENHANCEMENT MODE operation in various electronic devices.
100 V
12 A
.146 ohm
44 A
NTD6600NT4
NTD6600NT4 by Onsemi is an N-channel Power FET with a 100V DS breakdown voltage and 44A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.146 ohm max RDS(on), and operates in enhancement mode. Suitable for surface mount assembly, this MOSFET has a small outline package style.
NTD6600N
NTD6600N by Onsemi is a Power FET with 100V DS Breakdown Voltage, 44A IDM, and 0.146 ohm RDS(on). Ideal for switching applications in enhancement mode, it features a built-in diode and operates in avalanche energy rating of 72mJ. This N-channel transistor is surface mountable with Gull Wing terminals.
NTMFD4C85NT3G
NTMFD4C85NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 300A IDM, and 0.0043 ohm RDS(ON). It is used for SWITCHING applications in SERIES CONNECTED configuration. The transistor features METAL-OXIDE SEMICONDUCTOR technology and comes in an 8-terminal SMALL OUTLINE package.
34.5 mJ
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
15.4 A
.0043 ohm
R-PDSO-F8
300 A
FLAT
NTMFD4C87NT3G
NTMFD4C87NT3G by Onsemi is an N-CHANNEL Power FET with 26.6A max drain current and 3.51W max power dissipation. Ideal for applications requiring high power handling in surface mount configurations, such as power supplies and motor control systems operating up to 150 °C.
26.6 A
3.51 W
NTMFS4C01NT1G
NTMFS4C01NT1G by Onsemi is a N-CHANNEL FET with 303A max drain current and 3.2W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features METAL-OXIDE SEMICONDUCTOR technology for efficient performance in surface mount configurations.
303 A
3.2 W
MATTE TIN
NVD6495NLT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
79 mJ
25 A
.054 ohm
83 W
80 A
AEC-Q101
NVMFS4C01NT3G
NVMFS4C01NT3G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 900A IDM, and 0.00095 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
862 mJ
319 A
.00095 ohm
R-PDSO-F5
5
3.84 W
900 A
Matte Tin (Sn) - annealed
NVMFS4C01NWFT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.84 W; Peak Reflow Temperature (C): 260; Minimum Operating Temperature: -55 Cel;
NVMFS4C03NT3G
NVMFS4C03NT3G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 143A ID, and 0.0024 ohm RDS(ON). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
549 mJ
143 A
.0024 ohm
77 W
NVMFS4C03NWFT3G
NVMFS4C03NWFT3G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 143A ID, and 0.0024 ohm RDS(ON). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
NTD24N06L-1G
NTD24N06L-1G by Onsemi is a N-channel Power FET with 60V DS breakdown voltage, 24A max drain current, and 0.045 ohm RDS(on). Ideal for switching applications, it features a built-in diode, Gull Wing terminals, and operates in enhancement mode. Suitable for surface mount assembly with a max power dissipation of 1.36W at 175 °C.
NTD32N06L-1G
NTD32N06L-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 90A IDM, and 0.028 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. The transistor has a max power dissipation of 93.75W and operates at temperatures up to 175 °C.
NTD95N02RG
NTD95N02RG by Onsemi is an N-CHANNEL FET with 32A ID and 0.005 ohm RDS. It's used for SWITCHING applications, featuring a 24V DS Breakdown Voltage and 84mJ EAS. The PLASTIC/EPOXY package with GULL WING terminals is ideal for ENHANCEMENT MODE operations in various electronic devices.
84 mJ
.005 ohm
NTP5411NG
NTP5411NG by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 60V, max pulsed drain current of 185A, and max power dissipation of 166W. Ideal for high-power switching circuits in various electronic devices.
280 mJ
.01 ohm
166 W
185 A
NTD20N06L-1G
NTD20N06L-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.048 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high performance in various power management systems.
NTD18N06-1G
NTD18N06-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A ID, and 0.06 ohm RDS. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 54A IDM. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and operates at up to 175 °C.
NTD4804N-1G
NTD4804N-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 230A IDM, and 0.0055 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 175 °C Max Temp. With a built-in diode, this N-CHANNEL transistor has a max power dissipation of 93.75W in a RECTANGULAR package.
117 A
14.5 A
.0055 ohm
230 A
NTD4804NT4G
NTD4804NT4G by Onsemi is an N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 230A and EAS of 450mJ, operating in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and low 0.0055 ohm RDS(on), it offers high power dissipation up to 93.75W at 175°C.
NTD4809N-1G
NTD4809N-1G by Onsemi is a N-channel FET with 30V DS breakdown voltage and 130A IDM. Ideal for switching applications, it features 0.014 ohm max drain-source resistance and 91mJ EAS rating. Package style: IN-LINE, terminal finish: TIN, operating mode: ENHANCEMENT MODE.
91 mJ
130 A
NTD4809N-35G
NTD4809N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 130A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in PLASTIC/EPOXY package with built-in DIODE. Operating at up to 175 °C, this MOSFET has a peak reflow temp of 260°C and EAS of 91mJ.
NTD5406NG
NTD5406NG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 40V DS Breakdown Voltage, 150A IDM, and 0.01 ohm RDS(on). With a max power dissipation of 100W and operating temperature of 175 °C, it is ideal for high-power switching circuits in various electronic devices.
40 V
70 A
100 W
150 A
NTD5406NT4G
NTD5406NT4G by Onsemi is an N-channel power FET with a 40V DS breakdown voltage and 150A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.01 ohm max RDS(on), and operates in enhancement mode.
12.2 A
300 pF
NTD5407NG
NTD5407NG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 40V DS Breakdown Voltage, 75A IDM, and 0.026 ohm Drain-Source Resistance. With a built-in diode, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology, it offers high performance in small outline packages.
150 mJ
38 A
.026 ohm
NTD5407NT4G
NTD5407NT4G by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage and 38A Drain Current. Ideal for applications requiring high power dissipation, such as motor control systems or power supplies. Features include a built-in diode, small outline package style, and a low on-resistance of 0.026 ohm.
80 pF
NTD78N03G
NTD78N03G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 210A IDM, and 0.006 ohm Max RDS(on). The transistor is in ENHANCEMENT MODE and comes in a PLASTIC/EPOXY package with GULL WING terminals.
722.5 mJ
11.4 A
.006 ohm
210 A
NTHD3100CT3G
NTHD3100CT3G by Onsemi is a Power FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it has max drain current of 3.2A, on-resistance of 0.08 ohm, and max power dissipation of 1.1W. Operating at up to 150 °C, it's a surface-mount transistor in small outline package suitable for various electronic designs.
3.2 A
2.9 A
.08 ohm
R-XDSO-C8
UNSPECIFIED
1.1 W
C BEND
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