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NTD95N02RG

Onsemi

NTD95N02RG by Onsemi

NTD95N02RG by Onsemi is an N-CHANNEL FET with 32A ID and 0.005 ohm RDS. It's used for SWITCHING applications, featuring a 24V DS Breakdown Voltage and 84mJ EAS. The PLASTIC/EPOXY package with GULL WING terminals is ideal for ENHANCEMENT MODE operations in various electronic devices.

Median Price

$0.282

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,531 parts In-Stock

1+ parts

-

100+ parts

$0.277

1k+ parts

$0.230

10k+ parts

$0.205

3,531

-

$0.277

$0.230

$0.205

Verical

USA . 3,531 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.288

3,531

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$0.288

Distributors (In-Stock)

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Digiode

USA . 1,670 parts In-Stock

1+ parts

$0.217

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1,670

$0.217

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Vyrian

USA . 3,999 parts In-Stock

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3,999

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Distributors (Availability)

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Corphita

USA . 2,233 parts In-Stock

1+ parts

$0.205

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-

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2,233

$0.205

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Corohmni

South Africa . 158 parts In-Stock

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$0.228

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158

$0.228

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Advanced Electronics

New Zealand . 800 parts In-Stock

1+ parts

$2.406

100+ parts

$2.382

1k+ parts

$2.285

10k+ parts

-

800

$2.406

$2.382

$2.285

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AZTECH Wire

Italy . 262 parts In-Stock

1+ parts

$16.830

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262

$16.830

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Kepictronics

USA . 20,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,142 parts In-Stock

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$0.209

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4,142

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$0.209

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Problanco Electronics

Mexico . 3,523 parts In-Stock

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3,523

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SupplyDigital Components

Austria . 1,833 parts In-Stock

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1,833

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Kulean Microsystems

USA . 899 parts In-Stock

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899

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TANS Electronics

Latvia . 498 parts In-Stock

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498

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UHIMA Technologies

Türkiye . 69 parts In-Stock

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69

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Overview

Upgrade your power management with the NTD95N02RG by Onsemi. Crafted with precision and expertise, this N-CHANNEL Power FET offers unrivaled performance in switching applications. With a low on-resistance and high drain current capability, this transistor provides efficient power handling for your projects. Whether you're looking to optimize energy efficiency or enhance system reliability, the NTD95N02RG delivers unmatched value and reliability. Elevate your designs with Onsemi's cutting-edge technology and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher mobility and conductivity, making them more efficient for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and can provide protection against reverse current flow.

Transistor Application: SWITCHING

Ideal for applications that require high-speed switching capabilities, such as power supplies and motor control.

Surface Mount: YES

Suitable for automated assembly processes and compact circuit designs.

Minimum DS Breakdown Voltage: 24 V

Can handle high voltage levels without breakdown, ensuring reliability in demanding applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easier circuit design and can provide protection against reverse current flow.

Avalanche Energy Rating (EAS): 84 mJ

Can withstand high energy spikes, making it suitable for applications with inductive loads.

No. of Terminals: 2

Simplifies the circuit layout and reduces the chance of wiring errors.

Maximum Drain Current (ID): 32 A

Capable of handling high current levels, suitable for power applications.

Maximum Drain-Source On Resistance: 0.005 ohm

Low on-resistance results in minimal power loss and higher efficiency in operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides good performance with low power consumption and high speed switching.

Terminal Finish: TIN

Ensures good electrical conductivity and prevents oxidation of terminals.

Peak Reflow Temperature °C: 260

Can withstand high temperatures during soldering process, ensuring reliable connection to the PCB.

Technical Specifications

Power Field Effect Transistors (FET) NTD95N02RG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

84 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

24 V

Maximum Drain Current (ID):

32 A

Maximum Drain-Source On Resistance:

.005 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTD95N02RG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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