Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTHD3100CT3
Onsemi
NTHD3100CT3 by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations, ideal for SWITCHING applications. It features 2 elements with built-in diode, 20V DS Breakdown Voltage, and 0.08 ohm Drain-Source Resistance. This small outline transistor has a max power dissipation of 1.1W and operates at up to 150 °C temperature.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
20 V
3.2 A
2.9 A
.08 ohm
METAL-OXIDE SEMICONDUCTOR
R-XDSO-C8
e0
1
2
8
ENHANCEMENT MODE
150 Cel
UNSPECIFIED
RECTANGULAR
SMALL OUTLINE
235
N-CHANNEL AND P-CHANNEL
1.1 W
12 A
Not Qualified
Other Transistors
YES
TIN LEAD
C BEND
DUAL
SWITCHING
SILICON
NTHD3101FT3G
NTHD3101FT3G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 13A IDM, 0.08 ohm RDS(on), and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor has DUAL terminals and a built-in diode for efficient power management.
SINGLE WITH BUILT-IN DIODE
e3
260
P-CHANNEL
13 A
TIN
NTMSD6N303R2SG
NTMSD6N303R2SG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 6A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 30A Pulsed Drain Current, and 0.032 ohm On Resistance. Suitable for surface mount with GULL WING terminals, this MOSFET operates in ENHANCEMENT MODE up to 150 °C.
325 mJ
30 V
6 A
.032 ohm
R-PDSO-G8
3
PLASTIC/EPOXY
N-CHANNEL
2 W
30 A
FET General Purpose Power
GULL WING
30
NTQD6968N
NTQD6968N by Onsemi is an N-CHANNEL FET with 20V DS breakdown voltage and 6.2A max drain current. Commonly used for switching applications, it features a common drain configuration, 2 elements with built-in diode, and operates in enhancement mode. The transistor has a 0.03 ohm max on resistance and can handle up to 18A pulsed drain current.
LOGIC LEVEL COMPATIBLE
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
6.2 A
.03 ohm
18 A
NTB5404NT4G
NTB5404NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 258A IDM, and 0.0045 ohm RDS(ON). Ideal for SWITCHING applications in small outline packages with 175 °C max operating temp.
1000 mJ
DRAIN
40 V
136 A
.0045 ohm
R-PSSO-G2
175 Cel
167 W
258 A
SINGLE
NTB5405NG
The Onsemi NTB5405NG is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 116A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 280A Pulsed Drain Current, and 0.0058 ohm On Resistance. Suitable for surface mount with GULL WING terminals in a RECTANGULAR package style.
800 mJ
116 A
.0058 ohm
150 W
280 A
NTD25P03LRLG
NTD25P03LRLG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, 75A IDM, and 0.08 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating at up to 150 °C, this MOSFET has a max power dissipation of 75W.
200 mJ
25 A
75 W
75 A
NTD4805N-1G
NTD4805N-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 175A IDM, and 0.0074 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and 79W Pdiss. The N-CHANNEL transistor has a SILICON element and operates at up to 175 °C.
288 mJ
95 A
12.6 A
.0074 ohm
R-PSIP-T3
IN-LINE
79 W
175 A
NO
THROUGH-HOLE
NTD4805NT4G
NTD4805NT4G by Onsemi is a power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 30V, max pulsed drain current of 175A, and max operating temperature of 175°C. This MOSFET has a low on-resistance of 0.0074 ohm and can handle a max drain current of 12.6A efficiently in small outline packages.
MATTE TIN
NTD4808N-1G
NTD4808N-1G by Onsemi is a single N-channel power FET with built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 30V, max pulsed drain current of 126A, and max operating temperature of 175 °C. With a package style of in-line and terminal finish of matte tin, it offers efficient performance in various electronic systems.
144.5 mJ
63 A
9.8 A
.0124 ohm
54.6 W
126 A
NTD4808N-35G
NTD4808N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 126A IDM, and 0.0124 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration with built-in diode. Operating in enhancement mode, this transistor has a max power dissipation of 54.6W and can handle up to 175°C operating temperature.
NTD4808NT4G
NTD4808NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 126A and EAS of 144.5mJ, making it suitable for high-power operations. With a 0.0124 ohm Drain-Source On Resistance, this MOSFET can handle up to 9.8A ID efficiently in a SMALL OUTLINE package.
NTD4810NT4G
NTD4810NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 120A and EAS of 98mJ, suitable for high-power operations. With a 0.0157 ohm RDS(ON) and 50W Pdiss, it offers efficient performance in a small outline package.
98 mJ
54 A
8.6 A
.0157 ohm
50 W
120 A
NTD4813NT4G
NTD4813NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 90A IDM, and 0.024 ohm RDS(ON). This METAL-OXIDE SEMICONDUCTOR FET comes in a PLASTIC/EPOXY package with GULL WING terminals, ideal for high-current switching circuits.
72 mJ
7.6 A
.024 ohm
90 A
NTD4815N-1G
NTD4815N-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 87A IDM, and 0.025 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration with a built-in DIODE. This METAL-OXIDE SEMICONDUCTOR device has a SILICON element and operates in ENHANCEMENT MODE.
60.5 mJ
6.9 A
.025 ohm
87 A
NTD4815N-35G
NTD4815N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 35A ID, and 0.025 ohm RDS(on). Ideal for switching applications, it features an IDM of 87A and EAS of 60.5mJ. Operating in enhancement mode at up to 175 °C, this N-channel transistor has a max power dissipation of 32.6W.
35 A
32.6 W
NTMFS4744NT1G
NTMFS4744NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 106A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode and operates in ENHANCEMENT MODE. This small outline transistor has a max power dissipation of 47.2W and can withstand up to 150 °C operating temperature.
286 mJ
53 A
7 A
.014 ohm
R-PDSO-F5
5
47.2 W
106 A
Tin (Sn)
FLAT
40
NTMFS4744NT3G
NTMFS4744NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 106A IDM, and 0.014 ohm RDS(on). Ideal for SWITCHING applications due to its 47.2W Power Dissipation, ENHANCEMENT MODE operation, and METAL-OXIDE SEMICONDUCTOR technology.
NTLGF3402PT1G
NTLGF3402PT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, 11A IDM, and 0.14 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, this transistor operates b/w -55 to 150 °C and features a METAL-OXIDE SEMICONDUCTOR technology.
2.3 A
.14 ohm
S-PDSO-N6
6
-55 Cel
11 A
NO LEAD
NTLJS4159NT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: SQUARE; Minimum DS Breakdown Voltage: 30 V; Terminal Form: C BEND;
3.6 A
.045 ohm
S-XDSO-C6
SQUARE
28 A
NILMS4501NR2G
NILMS4501NR2G by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage, 14A IDM, and 0.016 ohm RDS. Ideal for SWITCHING applications in ENHANCEMENT MODE, it has a 175 °C Max Operating Temp and 50mJ EAS rating.
50 mJ
CURRENT MIRROR WITH BUILT-IN DIODE
24 V
9.5 A
.016 ohm
R-PBCC-N4
4
CHIP CARRIER
2.7 W
14 A
BOTTOM
NTD4905NT4G
NTD4905NT4G by Onsemi is an N-CHANNEL Power FET with a 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 264A and 0.007 ohm RDS(ON), suitable for high-power operations. This METAL-OXIDE SEMICONDUCTOR FET comes in a PLASTIC/EPOXY package with GULL WING terminals, designed for surface mount installations.
61 mJ
.007 ohm
264 A
NTD4906N-1G
NTD4906N-1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 223A IDM, and 0.008 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 37.5W at 175 °C, making it ideal for high-power switching circuits.
48 mJ
.008 ohm
37.5 W
223 A
FET General Purpose Powers
NTD4906N-35G
NTD4906N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 223A IDM, and 0.008 ohm RDS. Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with built-in DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 37.5W at 175 °C max temp.
NTD4906NT4G
NTD4906NT4G by Onsemi is an N-channel Power FET with a 30V DS breakdown voltage and 223A pulsed drain current, ideal for switching applications. It features a built-in diode, 0.008 ohm max on-resistance, and operates in enhancement mode. The small outline package with gull wing terminals ensures efficient heat dissipation up to 175 °C.
NTD4909N-1G
NTD4909N-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 167A IDM, and 0.012 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in PLASTIC/EPOXY package with BUILT-IN DIODE. Operating in ENHANCEMENT MODE at up to 175 °C, this transistor has a SILICON element and METAL-OXIDE SEMICONDUCTOR technology.
28 mJ
8.8 A
.012 ohm
167 A
NTD4909N-35G
NTD4909N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 41A Drain Current, and 0.012 ohm On Resistance. Ideal for SWITCHING applications due to its 167A Pulsed Drain Current and 29.4W Power Dissipation capabilities in ENHANCEMENT MODE operation.
41 A
29.4 W
NTD4910N-35G
NTD4910N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 152A IDM, and 0.013 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology. With a max operating temp of 175 °C, this N-CHANNEL transistor has a built-in DIODE in a RECTANGULAR package.
25.3 mJ
8.2 A
.013 ohm
152 A
NTD4913NT4G
NTD4913NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 132A and 0.015 ohm Drain-Source Resistance. With a small outline package style and GULL WING terminals, it operates in ENHANCEMENT MODE at up to 175 °C.
22 mJ
7.7 A
.015 ohm
132 A
NTMFS4833NT1G
NTMFS4833NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 288A IDM, 612.5mJ EAS, and 0.003ohm RDS(ON). Operating at 150°C max temp, it has a power dissipation of 125W in a small outline package.
612.5 mJ
191 A
16 A
.003 ohm
125 W
288 A
NTMFS4833NT3G
NTMFS4833NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 288A IDM, 612.5mJ EAS, and 0.003ohm RDS(ON). With a max power dissipation of 125W and operating temperature up to 150°C, it's suitable for high-power circuits requiring efficient switching capabilities.
NTMFS4837NT1G
NTMFS4837NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 148A IDM, and 0.0075 ohm RDS(on). Ideal for SWITCHING applications due to its 47.2W power dissipation and ENHANCEMENT MODE operation at up to 150 °C.
242 mJ
74 A
10 A
.0075 ohm
R-PDSO-F6
148 A
NTMFS4841NT1G
Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Maximum Time At Peak Reflow Temperature (s): 30; Qualification: Not Qualified; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
57 A
NCV8440STT1G
NCV8440STT1G by Onsemi is a Power FET with 52V DS Breakdown Voltage, 10A IDM, and 0.95 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications in ENHANCEMENT MODE. The package is RECTANGULAR with GULL WING terminals, suitable for surface mount installation.
110 mJ
52 V
2.6 A
.95 ohm
TO-261AA
R-PDSO-G3
NCV8440STT3G
NCV8440STT3G by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 52V, max pulsed drain current of 10A, and max operating temperature of 150 °C. This MOSFET has a package style of small outline and terminal finish in matte tin, suitable for power management systems.
NTB6411ANG
NTB6411ANG by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 285A IDM, and 0.014 ohm RDS(on). It is used in applications requiring high power dissipation up to 217W, such as power supplies and motor control systems.
470 mJ
100 V
77 A
72 A
217 W
285 A
NTB6411ANT4G
NTB6411ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 285A IDM, and 0.014 ohm RDS(on). Ideal for applications requiring high power dissipation in a small outline package.
NTB6412ANT4G
NTB6412ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 240A IDM, and 0.0182 ohm RDS(on). It is used in applications requiring high power dissipation up to 167W, such as power supplies and motor control systems.
300 mJ
58 A
.0182 ohm
240 A
NTB6448ANG
NTB6448ANG by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 305A IDM, and 0.013 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in enhancement mode operation at up to 175 °C temperature.
500 mJ
76 A
188 W
305 A
NTB6448ANT4G
NTB6448ANT4G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 305A IDM. Ideal for applications requiring high power dissipation, such as motor control systems or power supplies. Features include built-in diode, 0.013 ohm RDS(on), and 175 °C max operating temp.
NTD6416ANL-1G
NTD6416ANL-1G by Onsemi is a Power FET with 100V DS Breakdown Voltage, 70A IDM, and 0.074 ohm RDS(on). Ideal for switching applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with built-in diode. Operating in enhancement mode at up to 175 °C, this MOSFET has a 50mJ EAS rating.
19 A
.074 ohm
R-PSFM-T3
FLANGE MOUNT
70 A
NTP6411ANG
NTP6411ANG by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 285A IDM, and 0.014 ohm RDS. It's used in power applications due to its 217W Pdiss, 470mJ EAS rating, and -55 °C to +175°C operating temp range.
TO-220AB
NTP6412ANG
NTP6412ANG by Onsemi is a single N-channel Power FET with a built-in diode, featuring a min DS breakdown voltage of 100V and max pulsed drain current of 240A. Ideal for applications requiring high power dissipation, such as in automotive or industrial settings.
NTP6448ANG
NTP6448ANG by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 305A IDM, and 0.013 ohm RDS(on). Ideal for power applications requiring high drain current handling. Suitable for use in enhancement mode operation at up to 175 °C temperature.
NDF04N62ZG
NDF04N62ZG by Onsemi is a Power FET with 620V DS Breakdown Voltage, 18A IDM, and 2Ω RDS(ON). It is an N-CHANNEL transistor for SWITCHING applications. The device operates in ENHANCEMENT MODE and has a max temperature of 150 °C.
120 mJ
ISOLATED
620 V
4.4 A
2 ohm
NDF10N62ZG
NDF10N62ZG by Onsemi is a Power FET with 620V DS Breakdown Voltage, 36A IDM, and 0.75 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max temp of 150 °C and EAS of 300mJ.
.75 ohm
36 A
NTMFS4852NT1G
NTMFS4852NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 310A IDM, and 0.0033 ohm RDS(on). Ideal for SWITCHING applications due to its 155A ID, 360mJ EAS rating, and ENHANCEMENT MODE operation. Suitable for high-power systems requiring efficient power dissipation in a SMALL OUTLINE package.
360 mJ
155 A
.0033 ohm
86.2 W
310 A
NTMFS4852NT3G
NTMFS4852NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 310A and EAS of 360mJ, making it suitable for high-power operations. With 0.0033 ohm RDS(on) and 86.2W Pd, this MOSFET offers efficient performance in a small outline package.
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