Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTMFS4897NFT1G
Onsemi
Power Field-Effect Transistors; Qualification: Not Qualified; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Drain Current (Abs) (ID): 171 A; Maximum Time At Peak Reflow Temperature (s): 30;
171 A
e3
1
260
Not Qualified
FET General Purpose Power
MATTE TIN
30
NTMFS4897NFT3G
Power Field-Effect Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; Qualification: Not Qualified; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
TIN
NTMFS4898NFT3G
NTMFS4898NFT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 234A and 0.0048 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150 °C. This MOSFET has a built-in diode, surface mount design, and is suitable for high-current circuitry.
228 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
13.2 A
.0048 ohm
METAL-OXIDE SEMICONDUCTOR
R-XDSO-F5
5
ENHANCEMENT MODE
150 Cel
UNSPECIFIED
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
N-CHANNEL
234 A
YES
Tin (Sn)
FLAT
DUAL
SWITCHING
SILICON
NTMFS4899NFT1G
NTMFS4899NFT1G by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 188A Pulsed Drain Current, and 0.0075 ohm Drain-Source On Resistance. With a max power dissipation of 48W, it operates in temperatures ranging from -55 to 150 °C.
84 mJ
75 A
10.4 A
.0075 ohm
165 pF
R-PDSO-F5
-55 Cel
PLASTIC/EPOXY
48 W
188 A
NVD5803NT4G
NVD5803NT4G by Onsemi is a Power FET with N-CHANNEL configuration, ideal for SWITCHING applications. Features include 40V DS Breakdown Voltage, 228A Pulsed Drain Current, and 0.0057 ohm Drain-Source On Resistance. Suitable for high-power switching circuits in various electronic devices.
240 mJ
40 V
85 A
.0057 ohm
R-PSSO-G2
2
175 Cel
83 W
228 A
GULL WING
SINGLE
NDD03N60ZT4G
NDD03N60ZT4G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 10A IDM, and 3.6 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and current handling capabilities. Suitable for use in power supplies, motor control, and industrial equipment due to its robust design and performance.
100 mJ
600 V
2.6 A
3.6 ohm
61 W
10 A
FET General Purpose Powers
NDD04N60Z-1G
NDD04N60Z-1G by Onsemi is a N-channel FET with 600V DS breakdown voltage, 20A IDM, and 120mJ EAS. Ideal for power applications requiring high drain current handling in enhancement mode operation.
120 mJ
4.1 A
2 ohm
R-PSIP-T3
3
IN-LINE
20 A
NO
THROUGH-HOLE
NDD04N60ZT4G
NDD04N60ZT4G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 20A IDM, and 120mJ EAS. Ideal for applications requiring high power dissipation in a small outline package, such as power supplies or motor control systems.
NDD05N50Z-1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83 W; Operating Mode: ENHANCEMENT MODE; JESD-30 Code: R-PSIP-T3;
130 mJ
500 V
3 A
4.7 A
1.5 ohm
19 A
NDD05N50ZT4G
NDD05N50ZT4G by Onsemi is a Power FET with 500V DS Breakdown Voltage, 19A IDM, and 130mJ EAS. It is an N-CHANNEL transistor in a PLASTIC/EPOXY package ideal for power applications requiring high voltage handling and current capabilities.
NTLJF3117PTAG
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 20 A;
20 V
3.3 A
2.3 A
.135 ohm
S-PDSO-N6
6
P-CHANNEL
1.5 W
Other Transistors
NO LEAD
NTMFS4839NT1G
NTMFS4839NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 132A IDM, and 0.0095 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a built-in DIODE and operates in SMALL OUTLINE package style.
180.5 mJ
9.5 A
.0095 ohm
132 A
40
NTGD4161PT1G
NTGD4161PT1G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 elements with built-in diode, GULL WING terminals, and 0.16 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it has a max power dissipation of 1.1W and can handle up to 10A pulsed drain current.
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
2.1 A
1.5 A
.16 ohm
R-PDSO-G6
1.1 W
NTD4806N-1G
NTD4806N-1G by Onsemi is a N-channel FET with 30V DS breakdown voltage, 150A IDM, and 0.0094 ohm max RDS(on). Ideal for switching applications due to its single configuration with built-in diode. Package style: in-line, terminal finish: tin, and operating mode: enhancement mode.
220 mJ
11 A
.0094 ohm
150 A
NTD4809NHT4G
NTD4809NHT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage and 130A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0125 ohm RDS(on), and 52W Power Dissipation in a small outline package.
112.5 mJ
58 A
9 A
.0125 ohm
52 W
130 A
NTD4960N-1G
NTD4960N-1G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 137A IDM, and 0.0127 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with built-in DIODE. Operating in ENHANCEMENT MODE, it has a max temp of 175 °C.
51.2 mJ
8.9 A
.0127 ohm
137 A
NTD4960N-35G
NTD4960N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 137A IDM, and 0.0127 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and built-in DIODE. Operating at up to 175 °C, this N-CHANNEL transistor has a SILICON element and METAL-OXIDE SEMICONDUCTOR technology.
NTD4960NT4G
NTD4960NT4G by Onsemi is an N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 137A and EAS of 51.2mJ, suitable for high-power operations. With a low 0.0127 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175 °C temperature.
NTD4963N-35G
NTD4963N-35G by Onsemi is a Power FET with 30V DS Breakdown Voltage, 132A IDM, and 0.016 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is IN-LINE with SILICON transistor element material.
33.8 mJ
44 A
8.1 A
.016 ohm
35.7 W
NTD4963NT4G
NTD4963NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 30V DS Breakdown Voltage, 132A Pulsed Drain Current, and 0.016 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.
NTLJF3118NTAG
NTLJF3118NTAG by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 20V DS Breakdown Voltage, 18A IDM, and 0.065 ohm RDS(on). This SMALL OUTLINE transistor has a SQUARE package shape and C BEND terminals.
.065 ohm
S-XDSO-C6
SQUARE
18 A
C BEND
FDB3652-F085
FDB3652-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 61A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a low 0.016 ohm On Resistance.
182 mJ
100 V
61 A
TO-263AB
245
150 W
HUFA76429D3ST-F085
HUFA76429D3ST-F085 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.029 ohm On Resistance. Ideal for applications requiring high power dissipation up to 110W in small outline packages.
ULTRA-LOW RESISTANCE
60 V
.029 ohm
TO-252AA
110 W
FDA20N50-F109
The Onsemi FDA20N50-F109 is a Power FET with N-CHANNEL polarity, 500V DS breakdown voltage, and 88A max pulsed drain current. Ideal for switching applications, it features a built-in diode in a plastic/epoxy package with 3 terminals. Operating in enhancement mode, it has a max power dissipation of 280W and can handle up to 150°C temperature.
FAST SWITCHING
1110 mJ
22 A
.23 ohm
R-PSFM-T3
FLANGE MOUNT
280 W
88 A
FDD3672-F085
FDD3672-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 44A Drain Current, and 0.028 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 144W Power Dissipation, -55 to 175 °C Operating Temperature range, and ENHANCEMENT MODE operation.
73 mJ
.028 ohm
144 W
AEC-Q101
FQD2N60CTM-WS
FQD2N60CTM-WS by Onsemi is a N-channel Power FET with 600V DS breakdown voltage, 7.6A IDM, and 4.7 ohm RDS(on). It is used for switching applications in enhancement mode with a built-in diode, suitable for surface mount technology.
1.9 A
4.7 ohm
TO-252
7.6 A
Matte Tin (Sn) - annealed
FDS4559-F085
FDS4559-F085 by Onsemi is a N-CHANNEL Power FET for switching applications. It features 60V DS breakdown voltage, 4.5A max drain current, and 0.055 ohm max on resistance. With a small outline package style and gull wing terminals, it operates in enhancement mode at up to 150°C peak temperature.
4.5 A
.055 ohm
R-PDSO-G8
8
2 W
FDS8958A-F085
FDS8958A-F085 by Onsemi is a Power FET with N-Channel and P-Channel types. It features 30V DS Breakdown Voltage, 20A IDM, and 0.028 ohm RDS(on). Ideal for switching applications, this MOSFET has a max operating temperature of 150°C and comes in an 8-terminal Gull Wing package.
54 mJ
7 A
N-CHANNEL AND P-CHANNEL
FQH44N10-F133
FQH44N10-F133 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 192A IDM, and 0.039 ohm RDS(on). Ideal for SWITCHING applications due to its 180W Pdiss, EAS of 530mJ, and -55 to +175°C operating temp. Suitable for various power control circuits.
530 mJ
48 A
.039 ohm
TO-247AB
180 W
192 A
FDD8896-F085
FDD8896-F085 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 94A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an EAS of 168mJ. Perfect for high-power circuit designs requiring efficient switching capabilities.
168 mJ
94 A
.0068 ohm
.08 W
FDB045AN08A0-F085
FDB045AN08A0-F085 by Onsemi is a N-CHANNEL Power FET with 75V DS Breakdown Voltage, ideal for SWITCHING applications. It features 19A Drain Current, 0.0045 ohm On Resistance, and 310W Power Dissipation in a RECTANGULAR package. Operating at up to 175°C, it uses METAL-OXIDE SEMICONDUCTOR technology for high performance.
600 mJ
75 V
.0045 ohm
310 W
FDD8445-F085
FDD8445-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 79W.
144 mJ
50 A
.0087 ohm
270 pF
79 W
53 ns
138 ns
HUF76639S3ST-F085
HUF76639S3ST-F085 by Onsemi is a N-CHANNEL FET with 100V DS Breakdown Voltage, 51A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 175°C. Package: PLASTIC/EPOXY, GULL WING terminals, and SMALL OUTLINE style.
ULTRA LOW RESISTANCE
51 A
.026 ohm
FDB42AN15A0-F085
FDB42AN15A0-F085 by Onsemi is a N-CHANNEL Power FET with 150V DS Breakdown Voltage and 35A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.042 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for high-power requirements in automotive and industrial electronics.
78 mJ
150 V
35 A
.042 ohm
FDMS9408-F085
FDMS9408-F085 by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 80A Drain Current, and 0.0018 ohm On Resistance. Ideal for SWITCHING applications in automotive (AEC-Q101) and industrial sectors due to its high power dissipation of 214W and fast turn-on/off times of 51ns/79ns.
143 mJ
80 A
.0018 ohm
214 W
79 ns
51 ns
FDH50N50-F133
FDH50N50-F133 by Onsemi is a N-CHANNEL Power FET with 500V DS Breakdown Voltage and 192A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 625W and operating temperature up to 150°C, this transistor offers reliable performance in various high-power electronic systems.
1868 mJ
.105 ohm
625 W
FDD10AN06A0-F085
Onsemi's FDD10AN06A0-F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 50A Drain Current, 0.0105 ohm On Resistance, and 135W Power Dissipation, it operates in ENHANCEMENT MODE. With a temperature range of -55 to 175 °C, this MOSFET is suitable for automotive (AEC-Q101) and industrial use.
429 mJ
.0105 ohm
135 W
FQB34P10TM-F085
FQB34P10TM-F085 by Onsemi is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 134A and EAS of 2200mJ, making it suitable for high-power operations. With 0.06 ohm RDS(on) and 155W Max Power Dissipation, this MOSFET offers efficient performance in various electronic designs.
2200 mJ
33.5 A
.06 ohm
155 W
134 A
FQA13N80-F109
Onsemi's FQA13N80-F109 is a N-CHANNEL Power FET with 800V DS Breakdown Voltage. Ideal for SWITCHING applications, it offers 50.4A IDM and 1100mJ EAS ratings. With 0.75 ohm RDS(on) and 300W Pd, this MOSFET operates in ENHANCEMENT MODE up to 150°C.
1100 mJ
800 V
12.6 A
.75 ohm
300 W
50.4 A
FCH041N60F-F085
FCH041N60F-F085 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a max Drain Current of 76A and an Operating Temperature range of -55 to 150°C. Ideal for SWITCHING applications, this transistor features a built-in DIODE and offers high power dissipation at 595W.
2025 mJ
76 A
.041 ohm
TO-247
595 W
514 ns
242 ns
FQD4P25TM-WS
FQD4P25TM-WS by Onsemi is a P-CHANNEL Power FET with 250V DS Breakdown Voltage, 12.4A IDM, and 2.1 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 45W. Suitable for surface mount with a temperature range of -55 to 150°C.
280 mJ
250 V
3.1 A
2.1 ohm
45 W
12.4 A
FQD3N60CTM-WS
FQD3N60CTM-WS by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 9.6A Max Pulsed Drain Current, 150mJ Avalanche Energy Rating, and 50W Max Power Dissipation. Suitable for ENHANCEMENT MODE operation in various electronic devices.
150 mJ
2.4 A
3.4 ohm
50 W
9.6 A
FCPF190N60E-F152
FCPF190N60E-F152 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features 61.8A Max Pulsed Drain Current and 400mJ Avalanche Energy Rating, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 39W and operates b/w -55 to 150 °C temperature range.
400 mJ
ISOLATED
20.6 A
.19 ohm
TO-220AB
39 W
61.8 A
252 ns
94 ns
FDD120AN15A0-F085
FDD120AN15A0-F085 by Onsemi is a N-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 150V. It is designed for switching applications and has a max drain current of 14A. This surface mount transistor operates in enhancement mode and has a max power dissipation of 65W.
122 mJ
14 A
.12 ohm
65 W
FDD2572-F085
FDD2572-F085 by Onsemi is a N-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 150V. It is designed for switching applications and has a max drain current of 29A. This surface mount transistor has a small outline package style and operates in an enhancement mode.
36 mJ
29 A
4 A
.054 ohm
FDD3682-F085
FDD3682-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 95W.
55 mJ
32 A
5.5 A
.036 ohm
95 W
FDB8832-F085
FDB8832-F085 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 34A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 300W.
1246 mJ
34 A
.0022 ohm
FDD4685-F085
FDD4685-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.027 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 69W and can withstand temperatures up to 175°C.
121 mJ
40 A
.027 ohm
205 pF
69 W
100 A
81 ns
43 ns
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