Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
FDD2572-F085 by Onsemi is a N-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 150V. It is designed for switching applications and has a max drain current of 29A. This surface mount transistor has a small outline package style and operates in an enhancement mode.
Median Price
$1.060
Lifecycle Status
Suppliers In-Stock
5
In-Stock Inventory
1k+
Rochester
1+ parts
-
100+ parts
1k+ parts
$0.880
10k+ parts
$0.784
Digiode
$0.824
Nova Conductors
$0.936
Chip Stock
Vyrian
Ampacity Inc.
$0.740
Corphita
$0.780
Corohmni
$0.867
Continental Prestige Electronics
$0.918
Argo Parts USA
Netroflash
AZTECH Wire
$17.469
Metaverse IC Inc.
Kepictronics
Lixinc
QUARKTWIN TECHNOLOGY LTD
Perfect Parts
A-Z Elektronik GmbH
TANS Electronics
Futuretech Components
Kulean Microsystems
Problanco Electronics
Glotronic Ltd.
SupplyDigital Components
Alle Elektronik GmbH
Supply Digital
Authorized Procurement Solutions
UHIMA Technologies
PLASTIC/EPOXY - This material provides durability and protection for the internal components, making it suitable for various environments.
N-CHANNEL - This type of channel allows for efficient and low resistance current flow, improving the device's performance.
SINGLE WITH BUILT-IN DIODE - The built-in diode simplifies circuit design and allows for easier connections, making it more convenient to use.
SWITCHING - Designed specifically for switching applications, this transistor provides fast response times and reliable performance, making it ideal for use in power management systems.
YES - The surface mount capability enables easy and efficient PCB assembly and reduces the overall size and weight of the device.
150 V - With a high breakdown voltage, this transistor can withstand high voltage spikes, ensuring robust operation in demanding applications.
RECTANGULAR - The rectangular shape allows for space-efficient placement on the PCB, providing flexibility in design and maximizing board real estate.
GULL WING - The gull wing terminal form facilitates secure soldering and connection, ensuring reliable electrical contact, even in demanding conditions.
ENHANCEMENT MODE - This mode enables optimal control and regulation of current flow, enhancing device efficiency and performance.
1 - With a single element, this transistor offers simplicity in circuit design and ease of use.
36 mJ - The high avalanche energy rating ensures the device can handle energy spikes without damage, improving its reliability and longevity.
29 A - With a high maximum drain current, this transistor can handle high power loads, making it suitable for applications requiring high current switching capabilities.
2 - The two terminals provide a straightforward connection, making it easy to integrate the transistor into circuit boards or other electronic devices.
135 W - The high power dissipation capacity allows the transistor to handle significant amounts of power without overheating, improving its overall stability and reliability.
SMALL OUTLINE - The small outline package style enables compact and space-efficient PCB layout, ideal for applications with limited space availability.
METAL-OXIDE SEMICONDUCTOR - The metal-oxide semiconductor technology ensures low power consumption, high efficiency, and excellent performance characteristics, making it a reliable choice for power management applications.
175 °C - The high maximum operating temperature allows for reliable operation in high-temperature environments, ensuring the transistor's stability and longevity.
SILICON - Silicon is widely used in transistor fabrication due to its excellent electrical properties, making this transistor a reliable choice for various applications.
55 °C - The low minimum operating temperature makes this transistor suitable for a wide range of operating conditions, including extreme cold environments.
MATTE TIN - The matte tin terminal finish provides excellent solderability, ensuring a reliable and durable connection to the PCB or other components.
4 A - With a high maximum drain current rating, this transistor is well-suited for applications requiring medium power levels, providing versatility for different electronic systems.
0.054 ohm - The low drain-source resistance minimizes power loss and improves efficiency, making this transistor an excellent choice for power-intensive applications.
SINGLE - The single terminal position simplifies the connection process and ensures straightforward integration into circuit designs.
1 - The MSL 1 rating indicates that the transistor is not sensitive to moisture, providing increased reliability and stability in various operating conditions.
DRAIN - The drain connection simplifies the transistor's use in specific circuit configurations and improves overall circuit performance.
30 - This specification indicates the maximum duration the transistor can sustain at the peak reflow temperature without compromising its performance or physical integrity.
260 - The high peak reflow temperature ensures a solid solder joint during the assembly process, guaranteeing the transistor's reliability and functionality.
AEC-Q101 - Complying with the AEC-Q101 standard ensures the transistor's high quality and reliability, making it suitable for automotive applications and other rigorous environments.
Power Field Effect Transistors (FET) FDD2572-F085 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
Case Connection:
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Reference Standard:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
FDD2572-F085 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Dev EOL 17/Aug/2020
PCN Design/Specification - Logo 17/Aug/2017
PCN Assembly/Origin - Mult Dev 30/Apr/2020
PCN Packaging - Mult Devices 24/Oct/2017
PCN Part Number - Mult Device Part Number Chg 30/May/2017
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
C0603X104K5RACAUTO
KEMET Corporation
C0603X104K5RACAUTO by KEMET Corp is a ceramic capacitor with capacitance of 0.1 uF and rated DC voltage of 50 V. It has a temperature coefficient of 15% and can operate b/w -55 to 125 °C. This SMT package is commonly used in automotive applications due to its AEC-Q200 reference standard.
LM358AN
Texas Instruments
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
1N4148WT
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Vishay Semiconductors
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RC0402JR-070RL
Yageo
Yageo's RC0402JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. It features METAL GLAZE/THICK FILM tech, WRAPAROUND terminals, and 0.0625 W power dissipation. Ideal for jumper applications in electronics requiring compact surface mount components.
1N4148
STMicroelectronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);
Semtech
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Conesys
CONNECTOR ACCESSORY; MIL Conformity: YES; Mating Contacts: M39029/57-354; Terminal Type: CRIMP; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT;
NUP2105LT1G
Onsemi
NUP2105LT1G by Onsemi is a Transient Suppression Device with 350W power dissipation, 29.1V breakdown voltage, and 44V clamping voltage. Commonly used in electronic circuits for surge protection due to its bidirectional polarity and silicon diode element material.
2N2222A
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148WS
Rochester Electronics
RN41N-I/RM
Microchip Technology
Microchip Technology's RN41N-I/RM is a telecom IC with 35 terminals, operating from -40 to 85°C. It has a supply voltage of 3.3V and is surface mountable in industrial applications. The package style is rectangular, measuring 13.2mm x 20.1mm with a seated height of 2.2mm, suitable for telecom interface functions.
Philips Components
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
Zetex Plc
LL4148
Weitron Technology
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Itt Semiconductor
FDN306P
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (Abs) (ID): 2.6 A; Operating Mode: ENHANCEMENT MODE;
FDS6982AS_NL
Fairchild Semiconductor's FDS6982AS_NL is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 8.6A Max Drain Current. Ideal for SWITCHING applications, it features a PLASTIC/EPOXY package, GULL WING terminals, and operates in ENHANCEMENT MODE up to 150°C.
2N7000
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
FDS8949_F085
FDS8949_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET for SWITCHING applications. Features include 40V DS Breakdown Voltage, 20A IDM, and 0.029 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic devices requiring efficient power management in compact designs.
PMV20ENR
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.94 W; Transistor Element Material: SILICON; Terminal Form: GULL WING;
FDD8424H_F085
Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
FDBL86062-F085
FDBL86062-F085 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 429W.
NDT3055L_NL
Fairchild Semiconductor's NDT3055L_NL is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 25A IDM, and 0.1 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max temp of 150°C, making it ideal for high-power switching circuits.
BSC093N15NS5ATMA1
Infineon Technologies
Infineon BSC093N15NS5ATMA1 is a N-CHANNEL FET with 150V DS breakdown voltage, 0.0093 ohm RDS(on), and 348A IDM. Ideal for switching applications due to its built-in diode, it operates in enhancement mode and has an EAS of 130mJ. The transistor's small outline package makes it suitable for surface mount designs.
ZXMP6A17GTA
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.9 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 60 V;
IRF530A
The Onsemi IRF530A is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 14A Max ID. Ideal for SWITCHING applications, it features a 0.11 ohm Drain-Source Resistance and operates in ENHANCEMENT MODE up to 175°C.
AUIRFN8459TR
AUIRFN8459TR by Infineon Technologies is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 320A IDM, 66mJ EAS, and 0.0059 ohm Drain-Source On Resistance. This SMALL OUTLINE transistor has DUAL terminals and AEC-Q101 standard compliance.
BS170
Advanced Microelectronic Products
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Drain Current (Abs) (ID): .5 A;
MSC035SMA170B4
Power Field-Effect Transistors;
IRFP4468PBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 520 W; Transistor Application: SWITCHING; JESD-609 Code: e3;
IRF7416TRPBF-1
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
FDD8424H
FDD8424H by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations. It has a 40V DS breakdown voltage, 55A max pulsed drain current, and 0.024 ohm max drain-source resistance. Ideal for switching applications, this MOSFET operates in enhancement mode with a max temperature of 150°C.
IRF9640STRLPBF
Vishay Intertechnology
Vishay Intertechnology's IRF9640STRLPBF is a P-CHANNEL FET with 200V DS breakdown voltage and 44A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with 0.5 ohm on-resistance and 125W power dissipation.
VNB35N07-E
STMicroelectronics VNB35N07-E is a N-CHANNEL FET with 60V DS Breakdown Voltage and 35A ID. Ideal for automotive applications, it features 125W Pd, 0.035 ohm RDS(on), and AEC-Q101 compliance.
IRF3205ZPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Pulsed Drain Current (IDM): 440 A; Case Connection: DRAIN;
IPP120P04P4L03AKSA2
IPP120P04P4L03AKSA2 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 480A IDM, and 0.0052 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance and 175°C max operating temp.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
FDD2582
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; No. of Elements: 1; Terminal Form: GULL WING;
FDD24AN06LA0_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; No. of Elements: 1; Peak Reflow Temperature (C): 260;
FDD24AN06LA0-F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Drain Current (ID): 7.1 A; Reference Standard: AEC-Q101;
FDD2572_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Maximum Drain Current (Abs) (ID): 29 A; JEDEC-95 Code: TO-252AA;
FDD2572
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Terminal Form: GULL WING; Peak Reflow Temperature (C): 260;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Operating Mode: ENHANCEMENT MODE; Peak Reflow Temperature (C): 260;
FDD26AN06A0_F085
Fairchild Semiconductor FDD26AN06A0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It has 36A Drain Current, 0.026 ohm On Resistance, and 75W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 175 °C.
FDD26AN06A0-F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; JESD-30 Code: R-PSSO-G2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDD2670
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Drain-Source On Resistance: .13 ohm; Case Connection: DRAIN;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; No. of Elements: 1; JESD-609 Code: e3;
FDD26AN06A0
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDD24AN06LA0
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; No. of Elements: 1; Maximum Drain Current (ID): 7.1 A;
The FDD24AN06LA0 by Onsemi is a power field effect transistor with a minimum DS breakdown voltage of 60V. It has a maximum drain current of 7.1A and a maximum drain-source on resistance of 0.019 ohm. This N-channel transistor operates in enhancement mode and is suitable for switching applications. Its package style is small outline with a rectangular shape and gull wing terminals. It can handle a maximum power dissipation of 75W and has a maximum operating temperature of 175°C.
FDD20AN06A0
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Terminal Form: GULL WING; JESD-30 Code: R-PSSO-G2;
FDD20AN06A0-F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Maximum Drain-Source On Resistance: .02 ohm; No. of Terminals: 2;
FDD2570
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Package Body Material: PLASTIC/EPOXY; Additional Features: FAST SWITCHING;
FDD2572_NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .054 ohm; No. of Terminals: 2;
FDD2512
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Maximum Pulsed Drain Current (IDM): 20 A; Maximum Drain Current (ID): 6.7 A;
FDD2570_NL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: MATTE TIN; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved