Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; No. of Elements: 1; Maximum Drain Current (ID): 7.1 A;
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Power Field Effect Transistors (FET) FDD24AN06LA0 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Fairchild Semiconductor
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FDD24AN06LA0 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
In 2016 Fairchild was acquired by ON Semiconductor (after 2022, onsemi). Fairchild Semiconductor International, Inc. was an American semiconductor company based in San Jose, California. Founded in 1957 as a division of Fairchild Camera and Instrument, it became a pioneer in the manufacturing of transistors and of integrated circuits. Schlumberger bought the firm in 1979 and sold it to National Semiconductor in 1987; Fairchild was spun off as an independent company again in 1997. In September 2016, Fairchild was acquired by ON Semiconductor. The company had locations in the United States at San Jose, California; San Rafael, California; South Portland, Maine; West Jordan, Utah; and Mountaintop, Pennsylvania. Outside the US it operated locations in Australia;[4] Singapore; Bucheon, South Korea; Penang, Malaysia; Suzhou, China; and Cebu, Philippines, among others.
2N7002-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
LM358N
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
ATMEGA328P-AU
Microchip Technology
ATMEGA328P-AU by Microchip: 8-bit RISC CPU, 20 MHz clock, 23 I/O lines. Ideal for industrial applications with SPI, TWI, USART connectivity and low power mode. Features include 2048 RAM bytes, 1024 EEPROM size, and 16384 ROM words.
FSMLF327
Fox Electronics
FSMLF327 by Fox Electronics is a crystal oscillator with 20 ppm frequency tolerance, 144% stability, and 50000 ohm series resistance. Ideal for applications requiring precise timing such as communication systems, industrial automation, and consumer electronics. Operating temperature range from -40 to 85 °C.
1N4148WS
Rugao Dachang Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358MX
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
1N4148
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -65 Cel; Terminal Position: BOTTOM;
LM317AEMP/NOPB
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: SOP; Terminal Form: GULL WING; Qualification Status: Not Qualified; Width: 3.56 mm;
1N4148WT
Yangzhou Yangjie Electronics
CRCW06031K00FKEAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.
SMBJ18CA
Micro Commercial Components
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Micronas Semiconductor Holding Ag
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;
BAV99
Silicon Standard
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20Z+T&R
Analog Devices
DS18B20Z+T&R by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. The sensor comes in a plastic package suitable for surface mount applications, with a max supply voltage of 5.5V and min of 3V.
OHN3140U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
LM358AN
Samsung
First Components International
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LAN8720AI-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
AUIRF4905STRL
Infineon Technologies
AUIRF4905STRL by Infineon is a P-CHANNEL FET for SWITCHING applications. It features 55V DS Breakdown Voltage, 280A IDM, and 0.02 ohm RDS(on). With a max power dissipation of 170W and operating temperature up to 150°C, it's ideal for high-power switching circuits in automotive and industrial electronics.
FQP30N06L
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 79 W; Qualification: Not Qualified; JESD-609 Code: e3;
CSD19537Q3T
Texas Instruments
CSD19537Q3T by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Pulsed Drain Current of 219A, Min DS Breakdown Voltage of 100V, and Max Operating Temperature of 150°C. This SINGLE configuration transistor has a Surface Mount design with METAL-OXIDE SEMICONDUCTOR technology.
STP80NF10
STMicroelectronics
STP80NF10 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 350mJ EAS, and 0.015 ohm RDS(ON). With a max power dissipation of 300W and operating temperature up to 175°C, it's suitable for high-power circuits.
NTD2955T4G
Onsemi
NTD2955T4G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 18A.
FQB34P10TM
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 155 W; Maximum Pulsed Drain Current (IDM): 134 A; Maximum Drain-Source On Resistance: .06 ohm;
BSZ100N06LS3GATMA1
BSZ100N06LS3GATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.0179 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, Surface Mountable, with DUAL terminals and DRAIN case connection.
SIS413DN-T1-GE3
Vishay Intertechnology's SIS413DN-T1-GE3 is a P-channel FET with 30V DS breakdown voltage, ideal for switching applications. Features include 70A max pulsed drain current, 0.0094 ohm max RDS(on), and 20mJ avalanche energy rating. Suitable for enhancement mode operation in small outline packages with drain case connection.
IRF540NPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING;
FDMS86101DC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Shape: RECTANGULAR; Maximum Drain Current (ID): 14.5 A;
IRF7328TRPBF
Infineon's IRF7328TRPBF is a P-CHANNEL FET for SWITCHING applications. It features 30V DS Breakdown Voltage, 32A IDM, and 0.021 ohm RDS(on). With a max power dissipation of 2W and operating temperature up to 150°C, it's ideal for high-performance electronic systems requiring efficient power management in compact designs.
IRFR6215TRPBF
Infineon's IRFR6215TRPBF is a P-CHANNEL FET with 150V DS Breakdown Voltage, 44A IDM, and 0.295 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 110W. Suitable for surface mount with GULL WING terminals, it has an operating temp range of -55 to 175 °C.
IRLML0060TRPBF
Infineon's IRLML0060TRPBF is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, 11A Max Pulsed Drain Current, and 0.092 ohm Max Drain-Source On Resistance. Operating in -55 to 150 °C range, it comes in small outline package suitable for surface mount technology.
BSC016N06NSTATMA1
Infineon's BSC016N06NSTATMA1 is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0016 ohm RDS(on), and 380mJ EAS. Its METAL-OXIDE SEMICONDUCTOR technology and DUAL terminal position make it suitable for high-power operations in various electronic devices.
SI7489DP-T1-E3
Vishay Intertechnology's SI7489DP-T1-E3 is a P-CHANNEL FET with 100V DS Breakdown Voltage, 40A IDM, and 83W Power Dissipation. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with -55 to 150 °C temperature range.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY;
FDMS86101A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 104 W; Transistor Element Material: SILICON; Terminal Position: DUAL;
IRFB4110PBF
IRFB4110PBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 670A and EAS of 190mJ, with a Drain Current (ID) of 180A. Operating in ENHANCEMENT MODE, it has a max power dissipation of 370W at 175°C.
RFD16N05LSM9A
Harris Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 16 A; Terminal Position: SINGLE; Package Style (Meter): SMALL OUTLINE;
BBS3002-DL-1E
Sanyo Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Package Shape: RECTANGULAR; Case Connection: DRAIN;
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NTD3055-150
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Drain-Source On Resistance: .15 ohm; JESD-30 Code: R-PSSO-G2;
FDD2582
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Terminal Form: GULL WING; Transistor Application: SWITCHING;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; No. of Elements: 1; Terminal Form: GULL WING;
FDD24AN06LA0_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; No. of Elements: 1; Peak Reflow Temperature (C): 260;
FDD24AN06LA0-F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Drain Current (ID): 7.1 A; Reference Standard: AEC-Q101;
FDD2572-F085
FDD2572-F085 by Onsemi is a N-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 150V. It is designed for switching applications and has a max drain current of 29A. This surface mount transistor has a small outline package style and operates in an enhancement mode.
FDD2572_F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Maximum Drain Current (Abs) (ID): 29 A; JEDEC-95 Code: TO-252AA;
FDD2572
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Terminal Form: GULL WING; Peak Reflow Temperature (C): 260;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 135 W; Operating Mode: ENHANCEMENT MODE; Peak Reflow Temperature (C): 260;
FDD26AN06A0_F085
Fairchild Semiconductor FDD26AN06A0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It has 36A Drain Current, 0.026 ohm On Resistance, and 75W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates b/w -55 to 175 °C.
FDD26AN06A0-F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; JESD-30 Code: R-PSSO-G2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDD2670
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; Maximum Drain-Source On Resistance: .13 ohm; Case Connection: DRAIN;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 70 W; No. of Elements: 1; JESD-609 Code: e3;
FDD26AN06A0
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDD24AN06LA0
The FDD24AN06LA0 by Onsemi is a power field effect transistor with a minimum DS breakdown voltage of 60V. It has a maximum drain current of 7.1A and a maximum drain-source on resistance of 0.019 ohm. This N-channel transistor operates in enhancement mode and is suitable for switching applications. Its package style is small outline with a rectangular shape and gull wing terminals. It can handle a maximum power dissipation of 75W and has a maximum operating temperature of 175°C.
FDD20AN06A0
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Terminal Form: GULL WING; JESD-30 Code: R-PSSO-G2;
FDD20AN06A0-F085
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Maximum Drain-Source On Resistance: .02 ohm; No. of Terminals: 2;
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