Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTMFS6B14NT3G
Onsemi
NTMFS6B14NT3G by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 180A IDM, and 0.015 ohm RDS(on). Ideal for applications requiring high power dissipation in small outline packages. Operating from -55 to 150 °C, it's suitable for various enhancement mode power management circuits.
29 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
100 V
50 A
10 A
.015 ohm
METAL-OXIDE SEMICONDUCTOR
R-PDSO-F5
e3
1
5
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
77 W
180 A
YES
MATTE TIN
FLAT
DUAL
30
SILICON
NDDL01N60Z-1G
NDDL01N60Z-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 3.4A IDM, and 15 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in power supplies, motor control, and lighting systems due to its N-channel configuration and 26W Pdiss.
12 mJ
600 V
.8 A
15 ohm
3 pF
R-PSIP-T3
3
IN-LINE
26 W
3.4 A
NO
TIN
THROUGH-HOLE
SINGLE
NDTL01N60ZT1G
NDTL01N60ZT1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 3.4A IDM, and 15 ohm RDS(on). Ideal for applications requiring high power dissipation in a small outline package. Suitable for use in enhancement mode operations at temperatures ranging from -55 to 150 °C.
.25 A
TO-261AA
R-PDSO-G4
4
2 W
GULL WING
NDTL01N60ZT3G
NDTL01N60ZT3G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 3.4A IDM, and 15 ohm RDS(on). Ideal for applications requiring high power dissipation in a small outline package. Suitable for use in enhancement mode operations at temperatures ranging from -55 to 150 °C.
NTMFS5C612NLWFT1G
NTMFS5C612NLWFT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.0015 ohm RDS(on), and 900A IDM. Ideal for power applications in small outline packages, featuring METAL-OXIDE SEMICONDUCTOR tech and SILICON material.
451 mJ
60 V
.0015 ohm
900 A
Matte Tin (Sn) - annealed
NVMFS5C404NT3G
NVMFS5C404NT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0007 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Enhances performance in power management systems with its high current handling capabilities.
907 mJ
40 V
378 A
.0007 ohm
120 pF
175 Cel
200 W
AEC-Q101
NVMFS5C404NWFT1G
NVMFS5C404NWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0007 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C404NWFT3G
NVMFS5C404NWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0007 ohm RDS(on). It is an N-CHANNEL MOSFET ideal for automotive applications due to its AEC-Q101 standard compliance and high power dissipation of 200W.
NDPL100N10BG
The Onsemi NDPL100N10BG is a Power FET with 100V DS Breakdown Voltage, 400A IDM, and 0.0087 ohm RDS(ON). Ideal for SWITCHING applications, it features N-CHANNEL polarity in a RECTANGULAR package with THROUGH-HOLE terminals. Operating in ENHANCEMENT MODE, this FET has an EAS of 147mJ and can handle up to 100A ID.
147 mJ
100 A
.0087 ohm
TO-220AB
R-PSFM-T3
FLANGE MOUNT
400 A
Tin (Sn)
SWITCHING
MCH6436-TL-W
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Terminal Finish: TIN BISMUTH; Additional Features: ESD PROTECTED;
ESD PROTECTED
30 V
6 A
.034 ohm
R-XDSO-F6
e6
6
UNSPECIFIED
1.5 W
24 A
TIN BISMUTH
CPH6347-TL-W
CPH6347-TL-W by Onsemi is a P-CHANNEL Power FET with 20V DS Breakdown Voltage, 24A IDM, and 0.039 ohm RDS. It's ideal for power management applications due to its small outline package, 150°C max operating temp, and built-in diode configuration.
20 V
.039 ohm
R-PDSO-G6
P-CHANNEL
1.6 W
CPH6442-TL-W
CPH6442-TL-W by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 24A IDM. Ideal for applications requiring high power dissipation, it features a built-in diode, operates in enhancement mode, and has a max operating temperature of 150 °C.
.043 ohm
MCH6336-TL-W
MCH6336-TL-W by Onsemi is a P-CHANNEL FET for switching applications. It features a 12V DS breakdown voltage, 20A max pulsed drain current, and 0.043 ohm max drain-source resistance. With a small outline package style and operating temp up to 150 °C, it's ideal for power management in compact electronic devices.
12 V
5 A
R-XDSO-N6
20 A
MCH6431-TL-W
MCH6431-TL-W by Onsemi is a N-CHANNEL FET with 30V DS breakdown voltage, 20A IDM, and 0.055 ohm RDS(on). Ideal for power applications, it features a built-in diode, operates in enhancement mode, and has a max temp of 150 °C.
.055 ohm
NTP8G202NG
NTP8G202NG by Onsemi is a single N-channel Power FET with 9A max drain current and 65W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 150°C ensures reliable performance in demanding environments.
9 A
65 W
FET General Purpose Power
NVMFS5C410NT1G
NVMFS5C410NT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.00092 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
578 mJ
300 A
.00092 ohm
70 pF
166 W
NVMFS5C410NT3G
NVMFS5C410NT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.00092 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.
NVMFS5C410NWFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 166 W; Maximum Drain Current (Abs) (ID): 300 A; JESD-609 Code: e3;
NVMFS5C410NWFT3G
NVMFS5C410NWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.00092 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5C430NLT1G
NVMFS5C430NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0022 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package for applications like automotive electronics due to AEC-Q101 standard compliance.
493 mJ
.0022 ohm
NVMFS5C430NLT3G
NVMFS5C430NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0022 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications meeting AEC-Q101 standards.
NVMFS5C430NLWFT1G
NVMFS5C430NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0022 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5C430NLWFT3G
NVMFS5C430NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0022 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications meeting AEC-Q101 standards.
NVMFS5C430NT3G
NVMFS5C430NT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for power applications in automotive electronics due to AEC-Q101 standard compliance.
338 mJ
185 A
.0017 ohm
45 pF
106 W
NVMFS5C430NWFT1G
NVMFS5C430NWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance.
NVMFS5C430NWFT3G
NVMFS5C430NWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0017 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5C442NT1G
NVMFS5C442NT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(ON). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.
220 mJ
140 A
.0023 ohm
40 pF
83 W
NVMFS5C442NT3G
NVMFS5C442NT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C442NWFT1G
NVMFS5C442NWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance and 175 °C max operating temp.
NVMFS5C442NWFT3G
NVMFS5C442NWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power management applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C450NLT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;
215 mJ
110 A
.0044 ohm
METAL SEMICONDUCTOR
42 pF
68 W
740 A
NVMFS5C450NLWFT1G
NVMFS5C450NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 740A IDM, and 0.0044 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Operating in the temperature range of -55 to 175 °C, it offers high power dissipation at 68W.
NVMFS5C450NLWFT3G
NVMFS5C450NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 740A IDM, and 0.0044 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C450NT1G
NVMFS5C450NT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 554A IDM, and 0.0033 ohm RDS(on). Ideal for power management applications in automotive industry due to AEC-Q101 compliance.
102 A
.0033 ohm
28 pF
554 A
NVMFS5C450NWFT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 28 pF;
NVMFS5C450NWFT3G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 68 W; Maximum Drain-Source On Resistance: .0033 ohm; Terminal Finish: Matte Tin (Sn) - annealed;
NTMFS5C450NLT3G
NTMFS5C450NLT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 740A IDM, and 0.0044 ohm RDS(on). Ideal for power applications in small outline packages, operating from -55 to 175 °C.
CPH6443-TL-W
CPH6443-TL-W by Onsemi is a N-CHANNEL Power FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features 24A IDM and 6A ID, with 0.037 ohm RDS(ON) for efficient operation. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for various power management tasks.
35 V
.037 ohm
NVMFS5C456NLT1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Operating Temperature: 175 Cel;
202 mJ
87 A
.006 ohm
21 pF
55 W
520 A
NVMFS5C456NLT3G
NVMFS5C456NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 520A IDM, and 0.006 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current and low resistance capabilities.
NVMFS5C456NLWFT1G
NVMFS5C456NLWFT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 520A Pulsed Drain Current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.
NVMFS5C456NLWFT3G
NVMFS5C456NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 520A IDM, and 0.006 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C460NLT3G
NVMFS5C460NLT3G by Onsemi is a single N-channel power FET with a min DS breakdown voltage of 40V and max pulsed drain current of 396A. It operates in enhancement mode, has a max power dissipation of 50W, and is suitable for applications requiring high drain currents such as automotive systems.
107 mJ
78 A
.0072 ohm
22 pF
50 W
396 A
NVMFS5C460NLWFT1G
NVMFS5C460NLWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 396A IDM, and 0.0072 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
NVMFS5C645NLT1G
NVMFS5C645NLT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0057 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
185 mJ
.0057 ohm
17 pF
79 W
820 A
NVMFS5C645NLT3G
NVMFS5C645NLT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0057 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in high-power systems with its 185mJ EAS rating.
NVMFS5C645NLWFT1G
NVMFS5C645NLWFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0057 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5C645NLWFT3G
NVMFS5C645NLWFT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0057 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
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