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NDDL01N60Z-1G

Onsemi

NDDL01N60Z-1G by Onsemi

NDDL01N60Z-1G by Onsemi is a Power FET with 600V DS Breakdown Voltage, 3.4A IDM, and 15 ohm RDS(on). Ideal for power applications requiring high voltage tolerance and low on-resistance. Suitable for use in power supplies, motor control, and lighting systems due to its N-channel configuration and 26W Pdiss.

Median Price

$0.174

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

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Chip1Stop

Japan . 810 parts In-Stock

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$0.110

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Arrow

USA . 695 parts In-Stock

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$0.154

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Rochester

USA . 9,900 parts In-Stock

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$0.211

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$0.175

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$0.156

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$0.211

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Verical

USA . 8,775 parts In-Stock

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$0.195

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Digiode

USA . 1,531 parts In-Stock

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Vyrian

USA . 8,218 parts In-Stock

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Corphita

USA . 1,448 parts In-Stock

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$0.094

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Corohmni

South Africa . 67 parts In-Stock

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$0.105

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AZTECH Wire

Italy . 175 parts In-Stock

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$19.660

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QUARKTWIN TECHNOLOGY LTD

USA . 14,018 parts In-Stock

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Authorized Procurement Solutions

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Continental Prestige Electronics

USA . 9,900 parts In-Stock

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Kulean Microsystems

USA . 6,316 parts In-Stock

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Problanco Electronics

Mexico . 3,983 parts In-Stock

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TANS Electronics

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SupplyDigital Components

Austria . 596 parts In-Stock

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UHIMA Technologies

Türkiye . 472 parts In-Stock

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Overview

Experience the superior quality and reliability of Onsemi with the NDDL01N60Z-1G Power Field Effect Transistor. This N-channel transistor offers a range of applications, from power supplies to motor control, with its single configuration and built-in diode. With a high breakdown voltage of 600V and maximum power dissipation of 26W, this transistor delivers exceptional performance and efficiency. Trust Onsemi for cutting-edge technology and unmatched value in every product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the product suitable for various operating environments.

Minimum DS Breakdown Voltage: 600 V

High breakdown voltage ensures reliable operation and protection against voltage spikes or surges.

Maximum Power Dissipation (Abs): 26 W

The high power dissipation capability allows the product to handle high power applications efficiently.

Maximum Operating Temperature: 150 °C

The wide operating temperature range makes the product suitable for use in varying temperature conditions.

Maximum Drain-Source On Resistance: 15 ohm

Low on-resistance helps in minimizing power losses and improving efficiency in electronic circuits.

Technical Specifications

Power Field Effect Transistors (FET) NDDL01N60Z-1G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

12 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

.8 A

Maximum Drain Current (ID):

.8 A

Maximum Drain-Source On Resistance:

15 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

3 pF

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

3.4 A

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

NDDL01N60Z-1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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