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NDDL1N60Z-1G

Onsemi

NDDL1N60Z-1G by Onsemi

NDDL1N60Z-1G by Onsemi is a N-CHANNEL FET with 0.8A max drain current, 25W power dissipation, and 150 °C operating temp. Ideal for power management applications requiring high efficiency and reliability in single configuration setups.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,138 parts In-Stock

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Digiode

USA . 478 parts In-Stock

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478

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TANS Electronics

Latvia . 5,618 parts In-Stock

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5,618

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Kulean Microsystems

USA . 4,034 parts In-Stock

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SupplyDigital Components

Austria . 3,367 parts In-Stock

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Corphita

USA . 1,441 parts In-Stock

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Problanco Electronics

Mexico . 1,032 parts In-Stock

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UHIMA Technologies

Türkiye . 727 parts In-Stock

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Corohmni

South Africa . 489 parts In-Stock

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Overview

Experience the power of innovation with the NDDL1N60Z-1G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Field Effect Transistors designed for optimal performance and reliability. This N-CHANNEL FET offers a single configuration with a maximum drain current of 0.8A and a maximum power dissipation of 25W. Perfect for a wide range of applications, this METAL-OXIDE SEMICONDUCTOR technology ensures efficient operation even at high temperatures. Trust Onsemi to provide you with the best-in-class components for your projects. Elevate your designs with the NDDL1N60Z-1G and experience the difference today.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs offer lower on-state resistance and higher current capabilities compared to P-CHANNEL FETs, making them suitable for many applications.

Configuration: SINGLE

Single configuration FETs are easier to control and suitable for simple circuit designs, making them user-friendly for various applications.

Maximum Drain Current (Abs) (ID): 0.8 A

With a maximum drain current of 0.8A, this FET can handle moderate to low power applications efficiently.

Maximum Power Dissipation (Abs): 25 W

The high maximum power dissipation of 25W allows the FET to operate reliably under varying load conditions without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers high input impedance, low noise, and fast switching speeds, making it suitable for various high-performance applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can withstand high temperatures and operate reliably in challenging environments.

Technical Specifications

Power Field Effect Transistors (FET) NDDL1N60Z-1G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.8 A

Maximum Drain Current (ID):

.8 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Trade Compliance

NDDL1N60Z-1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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