Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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ECH8655R-R-TL-H
Onsemi
ECH8655R-R-TL-H by Onsemi is an N-CHANNEL Power FET with 9A max drain current and 1.5W power dissipation. Ideal for applications requiring high power efficiency in a compact design, such as automotive electronics or industrial automation systems. Operating up to 150 °C, it features surface mount technology and tin/bismuth terminal finish for reliable performance.
9 A
METAL-OXIDE SEMICONDUCTOR
e6
1
150 Cel
260
N-CHANNEL
1.5 W
FET General Purpose Power
YES
Tin/Bismuth (Sn/Bi)
30
NVMFS5C406NWFT1G
NVMFS5C406NWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0008 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
439 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
40 V
353 A
.0008 ohm
150 pF
R-PDSO-F5
e3
5
ENHANCEMENT MODE
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
179 W
900 A
AEC-Q101
Matte Tin (Sn) - annealed
FLAT
DUAL
SILICON
NTP110N65S3HF
NTP110N65S3HF by Onsemi is a Power FET with 650V DS Breakdown Voltage, ideal for switching applications. It features a max IDM of 69A and EAS of 380mJ, operating in Enhancement Mode. With a package style of Flange Mount and RDS(on) of 0.11 ohm, it offers high power dissipation up to 240W at temperatures ranging from -55°C to 150°C.
380 mJ
650 V
30 A
.11 ohm
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
NOT SPECIFIED
240 W
69 A
NO
THROUGH-HOLE
SINGLE
SWITCHING
NTPF110N65S3HF
NTPF110N65S3HF by Onsemi is a Power FET with 650V DS Breakdown Voltage, ideal for switching applications. It features a max IDM of 69A and EAS of 380mJ, operating in enhancement mode. With a package style of Flange Mount and an RDS(on) of 0.11 ohm, it offers efficient performance in various power electronics designs.
ISOLATED
NTMFS5H425NLT1G
NTMFS5H425NLT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 650A IDM, and 0.0043 ohm RDS(on). Ideal for power applications in small outline packages, operating from -55 to 150 °C.
289 mJ
118 A
.0043 ohm
32 pF
69 W
650 A
NTH4L080N120SC1
NTH4L080N120SC1 by Onsemi is a Power FET with 1200V DS Breakdown Voltage, ideal for switching applications. It features 125A IDM, 171mJ EAS, and 0.11 ohm RDS(on). With a max power dissipation of 170W and operating temperature up to 175°C, it offers high performance in various industrial settings.
HIGH RELIABILITY
171 mJ
1200 V
29 A
10 pF
TO-247
R-PSFM-T4
4
170 W
125 A
SILICON CARBIDE
54 ns
28 ns
NTMJS1D6N06CLTWG
NTMJS1D6N06CLTWG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0023 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in enhancement mode operation at temperatures ranging from -55 to 175 °C.
451 mJ
60 V
250 A
.0023 ohm
R-PSSO-G4
167 W
GULL WING
FCH041N65EFLN4
FCH041N65EFLN4 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 228A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 595W, this transistor has a 0.041 ohm Drain-Source On Resistance and can handle up to 76A ID.
2025 mJ
76 A
.041 ohm
35 pF
595 W
228 A
394 ns
180 ns
FCHD040N65S3-F155
FCHD040N65S3-F155 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 162.5A Pulsed Drain Current. Ideal for SWITCHING applications, it features a 0.04 ohm Drain-Source On Resistance, 417W Power Dissipation, and operates in the -55 to 150 °C temperature range.
358 mJ
65 A
.04 ohm
TO-247AD
417 W
162.5 A
MATTE TIN
FDB9509L-F085
FDB9509L-F085 by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 669A IDM. Ideal for applications requiring high power dissipation, it operates in Enhancement Mode with -55 to 175 °C temperature range.
82 mJ
83 A
.008 ohm
TO-263AB
R-PSSO-G2
2
245
P-CHANNEL
93.8 W
669 A
NTHL033N65S3HF
NTHL033N65S3HF by Onsemi is a Power FET with 650V DS Breakdown Voltage, 175A IDM, and 0.033 ohm RDS(on). Ideal for switching applications, it operates in Enhancement Mode with a max power dissipation of 500W. The N-CHANNEL transistor has a rectangular package shape and can handle up to 70A drain current.
1250 mJ
70 A
.033 ohm
500 W
175 A
NTHL040N65S3HF
NTHL040N65S3HF by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, 162.5A IDM, and 0.04 ohm RDS(on). Ideal for SWITCHING applications due to its 446W Pdiss, -55 to 150 °C operating temp range, and EAS of 1009 mJ.
1009 mJ
446 W
NTHL080N120SC1
NTHL080N120SC1 by Onsemi is a Power FET with 1200V DS Breakdown Voltage, 132A IDM, and 0.11 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 178W. The transistor features an N-CHANNEL configuration in a RECTANGULAR package with METAL-OXIDE SEMICONDUCTOR technology.
31 A
6.5 pF
178 W
132 A
NTMTS0D6N04CLTXG
NTMTS0D6N04CLTXG by Onsemi is a power FET with N-channel configuration, 40V DS breakdown voltage, and 900A max pulsed drain current. It is commonly used in applications requiring high power dissipation and low drain-source resistance.
2058 mJ
554.5 A
.00066 ohm
299 pF
245.4 W
NTMYS1D2N04CLTWG
NTMYS1D2N04CLTWG by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 900A IDM. Ideal for applications requiring high power dissipation, it operates in enhancement mode with a max temperature of 175 °C. The transistor features a low on-resistance of 0.0017 ohm and built-in diode, making it suitable for various power management systems.
1359 mJ
258 A
.0017 ohm
118 pF
134 W
NVTFWS002N04CTAG
NVTFWS002N04CTAG by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 27A Drain Current. Ideal for applications requiring high power dissipation, such as automotive electronics. Features include 676A Pulsed Drain Current, 268mJ Avalanche Energy Rating, and -55 to 175 °C Operating Temperature range.
268 mJ
27 A
.0024 ohm
41 pF
R-PDSO-F8
8
85 W
676 A
NTMJS0D9N04CLTWG
NTMJS0D9N04CLTWG by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 900A max pulsed drain current. Ideal for applications requiring high power dissipation and low on-resistance in a small outline package. Operating temperature range from -55 to 175 °C makes it suitable for various industrial uses.
706 mJ
330 A
.0012 ohm
77 pF
R-PDSO-X5
UNSPECIFIED
NTMJS1D0N04CTWG
NTMJS1D0N04CTWG by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 900A IDM, and 0.00092 ohm RDS(on). Ideal for power management applications requiring high drain current handling capabilities. Operates in enhancement mode with a max power dissipation of 166W at temperatures ranging from -55 to 175 °C.
578 mJ
300 A
.00092 ohm
166 W
NTMTS001N06CLTXG
NTMTS001N06CLTXG by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 900A IDM. Ideal for applications requiring high power dissipation, such as automotive systems and industrial equipment. Features include a built-in diode, small outline package style, and -55 to 175 °C operating temperature range.
887 mJ
398.2 A
.00105 ohm
130 pF
244 W
NTMTS0D4N04CLTXG
NTMTS0D4N04CLTXG by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 900A Pulsed Drain Current. Ideal for applications requiring high power dissipation, such as automotive systems and industrial equipment. Features include a built-in diode, small outline package style, and an operating temperature range of -55 to 175 °C.
4454 mJ
553.8 A
.00064 ohm
390 pF
NVHL072N65S3
NVHL072N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 110A and EAS of 214mJ, making it suitable for high-power operations. With an ID of 44A and 0.072 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.
214 mJ
44 A
.072 ohm
312 W
110 A
NVHL082N65S3F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 313 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: DRAIN;
510 mJ
40 A
.082 ohm
313 W
100 A
NVTFWS004N04CTAG
NVTFWS004N04CTAG by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 338A IDM. Ideal for applications requiring high power dissipation, such as automotive systems. Operating in enhancement mode, it features a low 0.0049 ohm Drain-Source Resistance for efficient performance.
122 mJ
18 A
.0049 ohm
25 pF
S-PDSO-F8
SQUARE
55 W
338 A
NTTFS003N04CTAG
NTTFS003N04CTAG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 484A IDM, and 0.0035 ohm RDS(on). Ideal for applications requiring high power dissipation in a small outline package. Operating temperature range from -55 to 175 °C makes it suitable for various industrial uses.
155 mJ
103 A
22 A
.0035 ohm
28 pF
484 A
NTH4L027N65S3F
NTH4L027N65S3F by Onsemi is a Power FET with 650V DS Breakdown Voltage, 187.5A IDM, and 0.0274 ohm RDS(on). It is an N-CHANNEL transistor for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 595W and operates b/w -55 to 150 °C.
1610 mJ
75 A
.0274 ohm
187.5 A
NVMFS5C645NWFT1G
NVMFS5C645NWFT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 820A IDM, and 0.0046 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
185 mJ
92 A
.0046 ohm
13 pF
79 W
820 A
NVMTS1D2N08H
NVMTS1D2N08H by Onsemi is a Power FET with N-CHANNEL polarity, 80V DS breakdown voltage, and 900A IDM. Ideal for applications requiring high power dissipation and operating temperatures up to 175°C. Suitable for automotive electronics due to AEC-Q101 reference standard compliance.
3170 mJ
80 V
337 A
.0011 ohm
43 pF
300 W
NTMFS5C628NT1G
NTMFS5C628NT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 900A IDM. Ideal for power applications, it features a built-in diode, 0.003 ohm RDS(on), and 565mJ EAS rating. Operating in enhancement mode, it can handle up to 150A ID making it suitable for high-power circuits.
565 mJ
150 A
.003 ohm
110 W
NTHL020N090SC1
NTHL020N090SC1 by Onsemi is a Power FET with 900V DS Breakdown Voltage, ideal for switching applications. It features a max IDM of 472A and EAS of 264mJ, operating in Enhancement Mode. With a max ID of 118A and RDS(on) of 0.028 ohm, it offers high power dissipation up to 503W in a rectangular package style.
264 mJ
900 V
.028 ohm
24 pF
503 W
472 A
NVHL020N090SC1
NVHL020N090SC1 by Onsemi is a N-CHANNEL Power FET with 900V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 472A and EAS of 264mJ, making it suitable for high-power operations. With an Abs ID of 118A and 0.028 ohm RDS(on), this MOSFET offers efficient performance in various industrial settings.
NVD4856NT4G-VF01
NVD4856NT4G-VF01 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Pulsed Drain Current of 179A, Avalanche Energy Rating of 180.5mJ, and Max Power Dissipation of 60W. Ideal for high-power switching circuits in automotive and industrial electronics due to its robust design and performance capabilities.
180.5 mJ
25 V
89 A
.0068 ohm
60 W
179 A
NVD5484NLT4G-VF01
NVD5484NLT4G-VF01 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 305A IDM, and 0.023 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
125 mJ
54 A
.023 ohm
100 W
305 A
NVD5807NT4G-VF01
NVD5807NT4G-VF01 by Onsemi is a Power FET with 40V DS Breakdown Voltage, 45A IDM, and 0.031 ohm RDS. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and 175 °C max operating temp.
29.4 mJ
23 A
.031 ohm
33 W
45 A
NVD5863NLT4G-VF01
NVD5863NLT4G-VF01 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 82A Max ID, and 0.009 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Operating in Enhancement Mode, it has a max power dissipation of 96W and can handle up to 500A IDM.
265 mJ
82 A
.009 ohm
96 W
500 A
EFC2J022NUZTCG
EFC2J022NUZTCG by Onsemi is a N-CHANNEL FET with 2 elements in COMMON DRAIN configuration. It operates in DEPLETION MODE for SWITCHING applications, with a min DS Breakdown Voltage of 12V and Max Power Dissipation of 1.8W at 150 °C. Ideal for power management systems requiring high performance in compact designs.
COMMON DRAIN, 2 ELEMENTS
12 V
R-PBGA-B10
10
DEPLETION MODE
GRID ARRAY
1.8 W
BALL
BOTTOM
EFC2K101NUZTDG
EFC2K101NUZTDG by Onsemi is a N-CHANNEL Power FET with COMMON DRAIN configuration. It features 2 elements, built-in diode and resistor, suitable for SWITCHING applications. Operating in DEPLETION MODE, it has a max power dissipation of 1.4W and can withstand temperatures from -55 to 150 °C.
COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
R-PBCC-N6
6
CHIP CARRIER
1.4 W
NO LEAD
FCP11N60N-F102
FCP11N60N-F102 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a Max IDM of 32.4A and EAS of 201.7mJ, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.299 ohm RDS(on) and can handle up to 94W power dissipation at temperatures ranging from -55 to 150 °C.
201.7 mJ
600 V
10.8 A
.299 ohm
5 pF
94 W
32.4 A
124 ns
65.4 ns
FCP16N60N-F102
FCP16N60N-F102 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a Max IDM of 48A and EAS of 355mJ, suitable for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.199 ohm RDS(on), making it ideal for high-power requirements up to 134.4W at temperatures ranging from -55 to 150 °C.
355 mJ
16 A
.199 ohm
134.4 W
48 A
181 ns
82.6 ns
FCP22N60N-F102
FCP22N60N-F102 by Onsemi is a Power FET with 600V DS Breakdown Voltage, 66A IDM, and 0.165 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features single configuration with built-in diode, operating temperature range of -55 to 150 °C.
672 mJ
.165 ohm
205 W
66 A
FCP9N60N-F102
FCP9N60N-F102 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 27A IDM. Ideal for SWITCHING applications, it features a built-in diode, 135mJ EAS rating, and 0.385 ohm RDS(on).
135 mJ
.385 ohm
83.3 W
114.2 ns
62.8 ns
FDD4243-F085P
FDD4243-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 14A, 0.044 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. With a compact SMALL OUTLINE package and AEC-Q101 standard compliance, it ensures reliable performance in automotive electronics.
84 mJ
14 A
.044 ohm
135 pF
TO-252AA
50 W
49 ns
38 ns
FDD4685-F085P
FDD4685-F085P by Onsemi is a P-CHANNEL Power FET with 40V DS Breakdown Voltage and 32A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an Avalanche Energy Rating of 121mJ.
121 mJ
32 A
.027 ohm
205 pF
83 W
81 ns
43 ns
FDP032N08-F102
FDP032N08-F102 by Onsemi is a N-CHANNEL Power FET with 75V DS Breakdown Voltage and 940A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. With a max power dissipation of 375W, this transistor has a 0.0032 ohm Drain-Source On Resistance.
1995 mJ
75 V
235 A
.0032 ohm
800 pF
375 W
940 A
932 ns
862 ns
FDP038AN06A0-F102
FDP038AN06A0-F102 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 17A Drain Current. Ideal for SWITCHING applications, it features a 175°C Max Operating Temp, 0.0038 ohm RDS(on), and 625 mJ Avalanche Energy Rating.
625 mJ
17 A
.0038 ohm
310 W
115 ns
175 ns
NTBGS002N06C
The Onsemi NTBGS002N06C is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 252A Drain Current. Ideal for applications requiring high power dissipation up to 242W, such as in power management systems or motor control circuits. Its small outline package and low on-resistance make it suitable for compact designs in various electronic devices.
252 A
.002 ohm
26 pF
TO-263CB
R-PSSO-G6
242 W
NTH4L020N120SC1
NTH4L020N120SC1 by Onsemi is a Power FET with 1200V DS Breakdown Voltage, 408A IDM, and 264mJ EAS. Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with SILICON CARBIDE element material, suitable for high-power requirements.
102 A
510 W
408 A
86 ns
69 ns
NTMFD5875NLT1G
NTMFD5875NLT1G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 80A IDM. Ideal for applications requiring high power dissipation, such as motor control systems or power supplies. Features include 2 elements with built-in diode, small outline package style, and -55 to 175 °C operating temperature range.
40 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
7 A
.045 ohm
36 pF
R-PDSO-F6
32 W
80 A
NTMFD6H840NLT1G
NTMFD6H840NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 80V DS breakdown voltage, and 336A max pulsed drain current. It is used in applications requiring high power dissipation, such as power supplies and motor control systems.
297 mJ
74 A
.0088 ohm
11 pF
90 W
336 A
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