Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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FCP11N60N-F102 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a Max IDM of 32.4A and EAS of 201.7mJ, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.299 ohm RDS(on) and can handle up to 94W power dissipation at temperatures ranging from -55 to 150 °C.
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This material provides durability and protection for the internal components of the FET.
N-channel FETs typically have higher mobility and conductivity, making them more efficient for switching applications.
The high breakdown voltage allows for the FET to handle high voltage applications without failing.
The high maximum drain current rating makes this FET suitable for applications that require high current handling capabilities.
Enhancement mode FETs are easier to control and typically have lower on-resistance, making them more efficient in switching applications.
The high power dissipation rating allows the FET to handle high power loads without overheating.
The high operating temperature range allows the FET to operate reliably in harsh environmental conditions.
The low on-resistance results in lower power losses and higher efficiency in switching applications.
Power Field Effect Transistors (FET) FCP11N60N-F102 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
Configuration:
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Maximum Feedback Capacitance (Crss):
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JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
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Maximum Power Dissipation (Abs):
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FCP11N60N-F102 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Dev EOL 01/Oct/2021
PCN Design/Specification - Logo 17/Aug/2017
PCN Assembly/Origin - Mult Dev Mold Chg 28/Oct/2019
PCN Packaging - Mult Devices 24/Oct/2017
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
BSS138
Jiangsu Changjiang Electronics Technology
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .22 A; Package Shape: RECTANGULAR;
NDT2955
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
LM358AN
NXP Semiconductors
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148WS
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Renesas Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Texas Instruments
LM358AN by Texas Instruments is an Operational Amplifier with 2 functions. It has a Max Input Offset Voltage of 5000 uV and Nominal Common Mode Reject Ratio of 85 dB. Widely used in voltage-feedback applications due to its high Min Voltage Gain of 15000 and Unity Gain Bandwidth of 1000 kHz.
LM2675M-ADJ/NOPB
SWITCHING REGULATOR; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
ULN2003ADR
ULN2003ADR by Texas Instruments is a NPN BJT with 7 elements, max IC of 0.5A, and VCEsat of 1.6V. Ideal for switching applications in small outline packages with Gull Wing terminals.
2N2222A
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
BAV99
Secos
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Transistor & Electronic
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N7002
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Moisture Sensitivity Level (MSL): 1; Maximum Operating Temperature: 150 Cel;
MBR1560CT
General Instrument
MBR1560CT by General Instrument is a common cathode rectifier diode with a max forward voltage of 0.75V and max output current of 15A. It is used for efficiency applications, has a package shape of rectangular, and can operate in temperatures ranging from -65 to 150 °C.
AMS1117-3.3
Advanced Monolithic Systems
AMS1117-3.3 by Advanced Monolithic Systems is a fixed positive single output LDO regulator with 1A max output current, 3% voltage tolerance, and 1.3V dropout voltage. Ideal for applications requiring stable 3.3V supply in compact designs due to its small outline package and excellent load regulation of 0.025%.
STMicroelectronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Operating Temperature: 200 Cel; Config: SINGLE; Terminal Finish: Tin/Lead (Sn/Pb);
Itt Components
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Maximum Operating Temperature: 200 Cel; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .15 A;
OPA2277UA/2K5
OPA2277UA/2K5 by Texas Instruments is a dual operational amplifier with low offset voltage of 100 uV and micropower consumption of 0.004 uA. Ideal for industrial applications, it offers high common mode rejection ratio of 140 dB and unity gain bandwidth of 1 MHz. With a compact rectangular package style, it is suitable for surface mount designs in various electronic systems.
LL4148-GS08
Vishay Intertechnology
The Vishay Intertechnology LL4148-GS08 is a glass diode with fast recovery time of 0.008 us and max reverse current of 5 uA. Ideal for applications requiring rectification, it has a breakdown voltage of 100 V and can handle a peak forward current of 2 A.
M39029/56351
Souriau
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Insertion Tools: M81969/14-10; Tool Settings: M22520/2-10; DIN Conformity: NO;
IRFP460PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Drain-Source On Resistance: .27 ohm; Avalanche Energy Rating (EAS): 960 mJ;
FQD12N20LTM-F085
Onsemi
FQD12N20LTM-F085 by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 9A, Max Pulsed Drain Current of 36A, and Max Power Dissipation of 55W. This ENHANCEMENT MODE transistor operates b/w -55 to 150 °C and has a fast turn on/off time for efficient performance.
FQD1N80TM
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 1 A;
2N7000
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
IRF530A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; JESD-609 Code: e3; Maximum Operating Temperature: 175 Cel;
IRLML2502
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): 33 A; Additional Features: HIGH RELIABILITY; No. of Elements: 1;
IRFB4227PBF
Infineon Technologies
IRFB4227PBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 260A IDM and 0.024 ohm RDS(on), operating in ENHANCEMENT MODE. With a max power dissipation of 330W, it is suitable for high-power electronic systems.
IPZ40N04S5L4R8ATMA1
Infineon's IPZ40N04S5L4R8ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0067 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRFR3410TRPBF
IRFR3410TRPBF by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has 125A IDM and 140mJ EAS, ideal for SWITCHING applications. With 0.039 ohm RDS(on) and 110W Pd, it operates in ENHANCEMENT MODE at up to 175°C.
FQA36P15
FQA36P15 by Onsemi is a P-CHANNEL Power FET with 150V DS Breakdown Voltage and 144A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and 0.09 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 294W and can handle up to 36A drain current.
IRLML6402GTRPBF
Infineon's IRLML6402GTRPBF is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 22A IDM, 11mJ EAS, and 0.065 ohm RDS(on). With a small outline package and -55 to 150 °C operating range, it offers high performance in compact designs.
STL60N10F7
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IPB120P04P4L03ATMA2
IPB120P04P4L03ATMA2 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 480A IDM, and 0.0049 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
PSMN5R5-60YS,115
The NXP Semiconductors PSMN5R5-60YS,115 is a single N-channel power FET with 100A max drain current and 130W max power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as industrial motor control and power supplies.
IRF3205LPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Peak Reflow Temperature (C): 260; No. of Elements: 1;
IRF840SPBF
Vishay Intertechnology's IRF840SPBF is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 32A IDM, 510mJ EAS, and 0.85 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W and can withstand up to 150°C.
BS170
Topaz Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Maximum Operating Temperature: 150 Cel;
IRF530PBF-BE3
Power Field-Effect Transistors;
BSC011N03LSIATMA1
Infineon's BSC011N03LSIATMA1 is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 400A IDM, 0.0015 ohm RDS(on), and 100mJ EAS rating. Its small outline package and DUAL terminal position make it suitable for various power management systems.
IRFP460
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Minimum DS Breakdown Voltage: 500 V; JEDEC-95 Code: TO-247;
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FCP125N60E
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 278 W; JEDEC-95 Code: TO-220AB; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 278 W; JEDEC-95 Code: TO-220AB; Package Shape: RECTANGULAR;
FCP190N60E
FCP190N60E by Onsemi is a N-CHANNEL FET with 20.6A ID and 208W power dissipation. Ideal for high-power applications, it operates up to 150°C with METAL-OXIDE SEMICONDUCTOR tech. Suitable for power management systems requiring single-channel configuration.
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;
FCP165N60E
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 227 W; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-220AB;
FCP165N60E by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a Max IDM of 69A and EAS of 525mJ. Operating in ENHANCEMENT MODE, it offers 0.165 ohm RDS(on) and can handle up to 227W power dissipation.
FCP11N60F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 11 A;
FCP190N65F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR; No. of Terminals: 3;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-220AB;
FCP104N60F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Package Body Material: PLASTIC/EPOXY; Operating Mode: ENHANCEMENT MODE;
FCP104N60F by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Pulsed Drain Current of 114A and Avalanche Energy Rating of 809mJ. With a Max Power Dissipation of 357W, it operates in ENHANCEMENT MODE at up to 150°C.
FCP11N60N
FCP11N60N by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It has a Max Pulsed Drain Current of 32.4A and Avalanche Energy Rating of 201.7mJ, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers a Max Power Dissipation of 94W and can handle up to 10.8A Drain Current efficiently.
FCP150N65F
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 298 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
FCP110N65F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Transistor Application: SWITCHING; Terminal Form: THROUGH-HOLE;
FCP165N65S3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 154 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FCP11N60
FCP11N60 by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a 33A IDM and 0.38 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max temperature of 150°C and an EAS of 340mJ.
FCP165N65S3R0
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 154 W; Terminal Position: SINGLE; JEDEC-95 Code: TO-220AB;
FCP125N65S3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 181 W; Minimum DS Breakdown Voltage: 650 V; JESD-609 Code: e3;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 150 Cel;
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