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SUM90P10-19L-E3

Vishay Intertechnology

SUM90P10-19L-E3 by Vishay Intertechnology

Vishay Intertechnology's SUM90P10-19L-E3 is a P-channel power FET with 100V DS breakdown voltage and 90A IDM. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 375W, this MOSFET has a drain-source on resistance of 0.019 ohm and can withstand temperatures from -55 to 175°C.

Median Price

$2.212

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32

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1k+

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Farnell

UK . 2,541 parts In-Stock

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$3.540

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$2.140

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DigiKey

USA . 643 parts In-Stock

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$5.150

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$2.441

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$1.929

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$1.901

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Mouser Electronics

USA . 13,043 parts In-Stock

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$5.320

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$2.630

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$2.210

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Newark

USA . 3,285 parts In-Stock

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$5.490

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$2.960

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TTI Europe

Germany . 16,800 parts In-Stock

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TTI

USA . 12,800 parts In-Stock

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EBV Elektronik

Germany . 10,400 parts In-Stock

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Avnet

USA . 3,200 parts In-Stock

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Element14

Singapore . 2,531 parts In-Stock

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Future Electronics

Canada . 2,400 parts In-Stock

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Arrow

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Verical

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Chip1Stop

Japan . 1,600 parts In-Stock

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Ozdisan Elektronik

Türkiye . 3,634 parts In-Stock

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$2.767

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Maritex

Poland . 4,560 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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TME

Poland . 42 parts In-Stock

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$5.030

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$2.880

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IBS Electronics

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Chip Stock

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NAC Semi

USA . 17,600 parts In-Stock

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Vyrian

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ACDS - Activité Composants Distribution Service

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Rutronik

Germany . 800 parts In-Stock

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Component Sense

UK . 619 parts In-Stock

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Bristol Electronics

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ComSIT Distribution GmbH

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Sensible Micro Corp

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Flex Direct, LLC

USA . 49 parts In-Stock

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North Shore Components

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A2Z Electronics, Inc.

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Prism Electronics

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NexGen Digital

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Modulus Dynamics

Lithuania . 4,786 parts In-Stock

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$0.728

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$0.728

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Corohmni

South Africa . 1,287 parts In-Stock

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Aztec Data Supply Inc.

USA . 261 parts In-Stock

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Advanced Electronics

New Zealand . 140 parts In-Stock

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Semicontronic

India . 7,440 parts In-Stock

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$1.680

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$1.638

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$1.630

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Ampacity Inc.

Singapore . 7,187 parts In-Stock

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$1.680

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Argo Parts USA

USA . 2,782 parts In-Stock

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$2.952

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Bastille Electronics

Australia . 300 parts In-Stock

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$2.989

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$2.839

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$2.800

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CoreStaff

Japan . 720 parts In-Stock

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$8.872

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$3.178

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

USA . 27,338 parts In-Stock

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GreenTree Electronics

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RC Electronics

USA . 9,288 parts In-Stock

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Microchip USA

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Eastek

USA . 8,000 parts In-Stock

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Continental Prestige Electronics

USA . 5,178 parts In-Stock

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Lucentia Tech

USA . 2,704 parts In-Stock

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Authorized Procurement Solutions

USA . 1,600 parts In-Stock

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Robosynatics

Brazil . 1,552 parts In-Stock

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S.R.D Solutions

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Assy Fe

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Kepictronics

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Infinite Electronics LLP (Excess)

. 402 parts In-Stock

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Overview

Discover the power of Vishay Intertechnology's SUM90P10-19L-E3 Power Field Effect Transistor (FET), designed for high-performance switching applications. With a maximum pulsed drain current of 90 A and a low on-resistance of 0.019 ohm, this P-channel transistor offers exceptional efficiency and reliability. Whether you're in the automotive, industrial, or consumer electronics industry, this enhancement mode FET provides the perfect solution for your power management needs. Trust Vishay Intertechnology for quality components that deliver superior performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the power FET, making it suitable for a variety of applications.

Polarity or Channel Type: P-CHANNEL

P-channel FETs are known for their low on-resistance and high current-carrying capability, making them a good choice for power switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and can improve efficiency in certain applications where a freewheeling diode is required.

Transistor Application: SWITCHING

Designed specifically for switching applications, this power FET offers fast switching speeds and low on-resistance to minimize power loss.

Surface Mount: YES

Being surface mount compatible makes installation easier and allows for a more compact design in electronic circuits.

Maximum Drain-Source On Resistance: 0.019 ohm

The low on-resistance of this FET results in reduced power dissipation and improved efficiency in high current applications.

Technical Specifications

Power Field Effect Transistors (FET) SUM90P10-19L-E3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

245 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

90 A

Maximum Drain Current (ID):

17.2 A

Maximum Drain-Source On Resistance:

.019 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

90 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Pure Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SUM90P10-19L-E3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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