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FCHD040N65S3-F155

Onsemi

FCHD040N65S3-F155 by Onsemi

FCHD040N65S3-F155 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 162.5A Pulsed Drain Current. Ideal for SWITCHING applications, it features a 0.04 ohm Drain-Source On Resistance, 417W Power Dissipation, and operates in the -55 to 150 °C temperature range.

Median Price

$6.470

Lifecycle Status

EOL

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 1,265 parts In-Stock

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-

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$7.180

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$6.430

10k+ parts

$6.050

1,265

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$7.180

$6.430

$6.050

DigiKey

USA . 1,200 parts In-Stock

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$5.760

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$5.760

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Flip Electronics (Authorized)

USA . 900 parts In-Stock

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900

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Digiode

USA . 1,865 parts In-Stock

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$7.600

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Sensible Micro Corp

USA . 123,042 parts In-Stock

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Vyrian

USA . 6,647 parts In-Stock

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Flip Electronics

USA . 1,200 parts In-Stock

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Corphita

USA . 2,487 parts In-Stock

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$7.200

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$7.200

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Corohmni

South Africa . 403 parts In-Stock

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$8.000

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403

$8.000

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Microchip USA

USA . 8,085 parts In-Stock

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$35.924

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$35.924

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TANS Electronics

Latvia . 8,009 parts In-Stock

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Problanco Electronics

Mexico . 4,057 parts In-Stock

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SupplyDigital Components

Austria . 2,913 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 1,399 parts In-Stock

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Authorized Procurement Solutions

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Northwest PG Solutions

USA . 954 parts In-Stock

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GreenTree Electronics

Israel . 920 parts In-Stock

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Native Components

USA . 592 parts In-Stock

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UHIMA Technologies

Türkiye . 324 parts In-Stock

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Overview

Experience superior performance and reliability with the FCHD040N65S3-F155 Power Field Effect Transistor by Onsemi. This N-CHANNEL transistor offers enhanced switching capabilities, making it ideal for a wide range of applications. With a high DS Breakdown Voltage of 650V and a low Drain-Source On Resistance of 0.04 ohm, this transistor delivers optimal efficiency and power handling. Trust Onsemi's renowned quality and innovation to bring you a product that exceeds expectations, providing exceptional value and benefits to meet your needs. Elevate your projects with the FCHD040N65S3-F155 and discover the difference that premium components can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the FET, ensuring long-lasting performance.

Minimum DS Breakdown Voltage: 650 V

The high breakdown voltage allows the FET to handle high voltage applications with ease, making it reliable and safe to use.

Maximum Pulsed Drain Current (IDM): 162.5 A

The high pulsed drain current rating means that the FET can handle sudden surges in current without getting damaged, making it suitable for demanding applications.

Maximum Power Dissipation (Abs): 417 W

With a high power dissipation rating, this FET can handle high power applications without overheating, ensuring stable operation under heavy loads.

Maximum Operating Temperature: 150 °C

The FET can operate at high temperatures without losing performance, making it suitable for use in industrial environments where temperature can vary.

Technical Specifications

Power Field Effect Transistors (FET) FCHD040N65S3-F155 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

358 mJ

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (Abs) (ID):

65 A

Maximum Drain Current (ID):

65 A

Maximum Drain-Source On Resistance:

.04 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

162.5 A

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

FCHD040N65S3-F155 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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