Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NTD110N02RT4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 24V DS Breakdown Voltage, 110A IDM, and 0.0062 ohm RDS(on). With a max power dissipation of 92.5W and operating temperature up to 150 °C, it is ideal for high-power electronic systems.
Median Price
$0.291
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DigiKey
$0.360
Verical
$0.269
Digiode
$0.226
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Corphita
$0.214
Corohmni
$0.238
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$0.240
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$0.210
AZTECH Wire
$15.500
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$0.219
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Kulean Microsystems
Problanco Electronics
A-Z Elektronik GmbH
Perfect Parts
SupplyDigital Components
TANS Electronics
UHIMA Technologies
Plastic/epoxy material provides durability and reliability for the transistor, making it suitable for various applications.
N-channel transistors typically have lower resistance and higher switching speed compared to P-channel transistors, making them efficient for switching applications.
Built-in diode helps protect the circuit from voltage spikes and reverse polarity, enhancing the overall reliability of the transistor.
Designed specifically for switching applications, ensuring optimal performance in controlling the flow of current.
Surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying assembly.
With a minimum breakdown voltage of 24V, this transistor can handle high voltages while maintaining stable operation.
High pulsed drain current rating allows the transistor to handle sudden surges in current without risk of damage.
High power dissipation capability ensures the transistor can handle large amounts of power while maintaining safe operating temperatures.
High maximum operating temperature makes this transistor suitable for use in a wide range of environments and applications.
Power Field Effect Transistors (FET) NTD110N02RT4 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
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Maximum Drain-Source On Resistance:
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JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
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NTD110N02RT4 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
PCN Obsolescence/ EOL - Multiple Devices 03/Jan/2008
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LL4148
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM358M
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
U.FL-R-SMT-1(10)
Hirose Electric
U.FL-R-SMT-1(10) by Hirose Electric is a RF connector with 50 ohm impedance, 0.05 dB insertion loss, and 8 GHz operating frequency. Ideal for board mounting in commercial applications, it features gold termination finish, liquid crystal polymer insulator, and 200VAC dielectric voltage resistance.
LM317T
Micro Commercial Components
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Moisture Sensitivity Level (MSL): 1; Maximum Output Current-1: 1.5 A; Operating Temperature (TJ-Min): 0 Cel;
Shanghai Lunsure Electronic Technology
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; Maximum Non Repetitive Peak Forward Current: .5 A; No. of Elements: 1; Maximum Reverse Recovery Time: .004 us;
1N4148
Pro-an Electronic
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
STM8S003F3P6TR
STMicroelectronics
STM8S003F3P6TR by STMicroelectronics is an 8-bit microcontroller with a max clock frequency of 16 MHz. It features 1024 RAM bytes, 128 data EEPROM size, and 5-ch 10-bit ADC channels. Ideal for industrial applications requiring low power mode and connectivity via I2C, SPI, and UART interfaces.
08055C104KAT4A
KYOCERA AVX
08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.
LM358DT
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
2N7002
Formosa Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): .115 A;
CRGCQ0805F10R
TE Connectivity
TE Connectivity's CRGCQ0805F10R is a 10 ohm fixed resistor with 1% tolerance and 400 ppm/°C temperature coefficient. It is a surface mount thick film resistor in an 0805 package, suitable for applications requiring precise resistance values in compact electronic circuits.
LAN8720AI-CP-TR
Standard Microsystems
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 24; Package Code: HVQCCN; Package Shape: SQUARE;
Philips Components
Diotec Semiconductor Ag
Microchip Technology
BSS138
Onsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;
2N2222A
North American Philips Discrete Products Div
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SS14
Zowie Technology
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Operating Temperature: 125 Cel; No. of Elements: 1; Maximum Non Repetitive Peak Forward Current: 30 A;
Daco Semiconductor
FQD12N20LTM
FQD12N20LTM by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.32 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 55W and can withstand temperatures from -55 to 150°C.
FDPF10N60NZ
FDPF10N60NZ by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a max IDM of 40A and EAS of 550mJ. With a 0.75 ohm RDS(on), this transistor operates in ENHANCEMENT MODE up to 150°C, making it suitable for high-power switching circuits.
2N7002K
Philips Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Maximum Drain Current (Abs) (ID): .34 A; Operating Mode: ENHANCEMENT MODE;
IRF7416TRPBF-1
International Rectifier
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Moisture Sensitivity Level (MSL): 1;
IRLML6346TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
BSC026N08NS5ATMA1
Infineon Technologies
Infineon Technologies' BSC026N08NS5ATMA1 is a power FET with N-channel configuration and built-in diode. It has a min DS breakdown voltage of 80V, max pulsed drain current of 400A, and low on-resistance of 0.0026 ohm. Ideal for switching applications in various industries.
AUIRF5210STRL
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Pulsed Drain Current (IDM): 140 A; Transistor Element Material: SILICON;
FDS8858CZ
FDS8858CZ by Onsemi is a Power FET with N-Channel and P-Channel types, ideal for switching applications. It features a 30V DS breakdown voltage, 20A max pulsed drain current, and 0.017 ohm max drain-source resistance. With a small outline package style and operating temperature up to 150°C, it's suitable for various electronic designs.
FDD6637
FDD6637 by Onsemi is a P-CHANNEL Power FET with 35V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 100A and EAS of 61mJ, with an ID of 55A and 0.0116 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power switching tasks.
SIR873DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIR873DP-T1-GE3 is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 50A and EAS of 80mJ, this MOSFET has 0.0475 ohm Drain-Source On Resistance. Its small outline package and matte tin finish make it suitable for various electronic designs.
G3R75MT12K
Genesic Semiconductor
Power Field-Effect Transistors;
IRFB4227PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Case Connection: DRAIN; Transistor Element Material: SILICON;
NDT3055
National Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Maximum Drain-Source On Resistance: .1 ohm; Package Body Material: PLASTIC/EPOXY;
AUIRF7316QTR
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.9 A; No. of Terminals: 8;
IRFP460LC
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Additional Features: AVALANCHE RATED; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1;
SQM40P10-40L_GE3
The Vishay Intertechnology SQM40P10-40L_GE3 is a P-channel power FET with 100V DS breakdown voltage and 160A max pulsed drain current. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Features include a built-in diode, 0.04 ohm max RDS(on), and small outline package style.
IRLL014NTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY;
AUIRF3205ZSTRL
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 170 W; Maximum Drain Current (ID): 75 A; Operating Mode: ENHANCEMENT MODE;
STH13N120K5-2AG
Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IRLML0060TRPBF
Infineon's IRLML0060TRPBF is a N-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, 11A Max Pulsed Drain Current, and 0.092 ohm Max Drain-Source On Resistance. Operating in -55 to 150 °C range, it comes in small outline package suitable for surface mount technology.
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NTD18N06LT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Maximum Pulsed Drain Current (IDM): 54 A; No. of Terminals: 2;
NTD110N02RG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92.5 W; Minimum DS Breakdown Voltage: 24 V; Package Style (Meter): SMALL OUTLINE;
NTD14N03R-1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20.8 W; Maximum Drain Current (ID): 11.4 A; Peak Reflow Temperature (C): 260;
NTD12N10-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56.6 W; No. of Elements: 1; Case Connection: DRAIN;
NTD14N03R-001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20.8 W; Case Connection: DRAIN; Package Body Material: PLASTIC/EPOXY;
NTD12N08L
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 80 V; Maximum Drain-Source On Resistance: .18 ohm;
NTD14N03RG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20.8 W; Maximum Time At Peak Reflow Temperature (s): 30; Case Connection: DRAIN;
NTD110N02R-001
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; No. of Elements: 1; Peak Reflow Temperature (C): 235;
NTD12N10-1G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56.6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 12 A;
NTD12N10G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56.6 W; Avalanche Energy Rating (EAS): 75 mJ; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NTD14N03R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20.8 W; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
NTD12N08
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Terminal Finish: TIN LEAD; JESD-30 Code: R-PSSO-G2;
NTD14N03R-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20.8 W; Minimum DS Breakdown Voltage: 25 V; JESD-609 Code: e0;
NTD110N02R-1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 92.5 W; No. of Elements: 1; Avalanche Energy Rating (EAS): 120 mJ;
NTD12N10T4
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56.6 W; Avalanche Energy Rating (EAS): 75 mJ; Operating Mode: ENHANCEMENT MODE;
NTD12N10
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56.6 W; Peak Reflow Temperature (C): 235; Transistor Application: SWITCHING;
NTD110N02R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e0;
NTD110N02R-001G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Peak Reflow Temperature (C): 260; Avalanche Energy Rating (EAS): 120 mJ;
NTD110N02RT4G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92.5 W; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel;
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