Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NTHD2102PT1 by Onsemi is a P-CHANNEL FET with 2 elements, built-in diode, and 0.058 ohm RDS(on). Ideal for switching applications with 3.4A max drain current and 8V min DS breakdown voltage. Features small outline package style and operates in enhancement mode.
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P-channel FETs are suitable for low-side switching applications, offering lower Rds(on) and better efficiency compared to N-channel FETs for certain applications.
The built-in diode ensures protection against reverse current flow, making this FET suitable for use in circuits where backflow of current needs to be prevented.
Designed specifically for switching applications, ensuring efficient power control in various electronic devices and circuits.
Ease of installation and space-saving design, making it suitable for compact electronic applications and PCB assembly.
Provides reliable protection against voltage spikes and ensures the FET can handle higher voltages without breakdown.
The rectangular package shape allows for easy integration into PCB designs and efficient use of space on the board.
Enhancement mode FETs offer better control over the switching operation, providing improved efficiency and performance in switching applications.
Capable of handling high peak currents, suitable for applications with temporary high power requirements.
Sufficient continuous current rating for various switching applications, ensuring reliable performance under normal operating conditions.
Provides multiple connection points for flexibility in circuit design and connection options.
Efficient power dissipation capability, ensuring the FET can handle power loads without overheating.
MOSFET technology offers high speed, low power consumption, and high input impedance, making it suitable for various electronic applications.
Silicon-based FETs are widely used in electronic devices due to their reliability, performance, and affordability.
Provides good solderability and durability, ensuring secure connections during installation and operation.
Low Rds(on) resistance allows for efficient power handling and reduced power losses, making the FET suitable for high current applications.
Dual terminal position provides versatility in circuit connections and allows for different mounting options depending on the application requirements.
High peak reflow temperature ensures robust solder joints and reliable PCB assembly, suitable for manufacturing processes requiring high-temperature soldering.
Power Field Effect Transistors (FET) NTHD2102PT1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
NTHD2102PT1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
PCN Obsolescence/ EOL - Multiple Devices 11/Feb/2009
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LL4148
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
LM317T
STMicroelectronics
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;
ULN2803A
Sanken Electric
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
BAV99
Rfe International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
ERJ3GEY0R00V
Panasonic
ERJ3GEY0R00V by Panasonic is a SMT fixed resistor with 0 ohm resistance, suitable for jumper applications. It features a metal glaze/thick film technology, rated for temperatures b/w -55 to 155 °C. With a compact rectangular construction and matte tin over nickel terminal finish, it is ideal for surface mount installations in various electronic devices.
SS14
Frontier Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
Sipex
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 240;
LM107H/883
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
1N4148WS
Vishay Intertechnology
Vishay Intertechnology's 1N4148WS is a single rectifier diode with a max forward voltage of 1V and output current of 0.15A. With a fast reverse recovery time of 0.004us, it operates up to 150°C. Ideal for applications requiring high-speed switching and low power consumption in surface mount configurations.
OPA2277UA/2K5E4
Texas Instruments
OPA2277UA/2K5E4 by Texas Instruments is a dual operational amplifier with low-offset and micropower features. It has a max input offset voltage of 100uV, nominal common mode reject ratio of 140dB, and min slew rate of 0.8V/us. Ideal for industrial applications requiring precise signal amplification in compact designs.
SMBJ18CA
Shenzhen Socay Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
FDN5618P
Onsemi
FDN5618P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 10A IDM and 0.17 ohm RDS(on), it operates in the temperature range of -55 to 150 °C, making it ideal for various electronic devices.
LM358M
Raytheon Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; JESD-30 Code: R-PDIP-T18;
1N4148
General Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Changzhou Galaxy Century Microelectronics
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
EU2B-YS3203C
Idec
ROTARY SWITCH;
ULN2803ADWG4
ULN2803ADWG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output characteristics, and built-in transient protections. It operates at temperatures ranging from -40 to 85°C and has a max supply voltage of 3V. Ideal for applications requiring sink current flow direction in a small outline package style.
2N7002
Supertex
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Maximum Feedback Capacitance (Crss): 5 pF;
BSZ160N10NS3GATMA1
Infineon Technologies
Infineon Technologies' BSZ160N10NS3GATMA1 is a power FET with N-channel configuration and a built-in diode. It is suitable for switching applications, offering a min DS breakdown voltage of 100V and max pulsed drain current of 160A. Its small outline package style and high operating temperature make it ideal for various electronic devices.
JANTX2N6796
JANTX2N6796 by Infineon Technologies is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 32A IDM, 75mJ EAS, and 0.195 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 25W in a CYLINDRICAL package.
SQM120P06-07L-GE3
Vishay Intertechnology's SQM120P06-07L-GE3 is a P-channel power FET with 60V DS breakdown voltage, 120A max drain current, and 0.0067 ohm on-resistance. Ideal for high-power applications in enhancement mode operation with 480A pulsed drain current capability.
MRF151G
M/a-com
N-CHANNEL; Maximum Power Dissipation (Abs): 500 W; Maximum Drain Current (Abs) (ID): 40 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 40 A; Operating Mode: ENHANCEMENT MODE;
IRF7410TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;
IRFH5010TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 100 V;
IRFH4253DTRPBF
Infineon's IRFH4253DTRPBF is a N-CHANNEL Power FET with 35A Max Drain Current and 50W Max Power Dissipation. Ideal for high-power applications, it operates up to 150°C, featuring METAL-OXIDE SEMICONDUCTOR tech in a surface-mount package.
IRLML2244TRPBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;
SI7431DP-T1-GE3
Vishay Intertechnology's SI7431DP-T1-GE3 is a P-CHANNEL FET for switching applications. Features include 200V DS breakdown voltage, 30A pulsed drain current, and 0.174 ohm max on-resistance. Ideal for high-power applications requiring efficient switching with a max operating temperature of 150°C.
BSP613PH6327XTSA1
BSP613PH6327XTSA1 by Infineon Technologies is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 11.6A and 0.13 ohm Drain-Source On Resistance, suitable for ENHANCEMENT MODE operation in automotive systems (AEC-Q101).
SQ2337ES-T1_GE3
The Vishay Intertechnology SQ2337ES-T1_GE3 is a P-CHANNEL Power FET with 80V DS Breakdown Voltage and 9A IDM. Ideal for applications requiring high power dissipation, it features a built-in diode, operates in enhancement mode, and has a small outline package style.
SI7155DP-T1-GE3
Vishay Intertechnology's SI7155DP-T1-GE3 is a P-channel FET with 40V DS breakdown voltage and 200A pulsed drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 104W. The MOSFET features a drain-source on resistance of 0.0046 ohm and can withstand temperatures from -55 to 150°C.
IRFH5015TRPBF
IRFH5015TRPBF by Infineon Technologies is a N-CHANNEL FET with 150V DS Breakdown Voltage and 220A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.031 ohm RDS(on), and 250W Pdiss. Operating in ENHANCEMENT MODE, this transistor has a max temp of 150°C and matte tin finish.
FDMS86252L
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Case Connection: DRAIN; No. of Elements: 1;
DMG6602SVT-7
Diodes Incorporated
DMG6602SVT-7 by Diodes Inc. is a Power FET with N/P-channel, 30V DS breakdown voltage, and 0.06 ohm max RDS(on). Ideal for switching applications, it features 2 elements in separate configuration with built-in diode. With 13A IDM and small outline package style, it operates at up to 150°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; No. of Elements: 1; JESD-609 Code: e3;
IRF5210PBF
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V;
BBS3002-DL-1E
Sanyo Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 90 W; Package Shape: RECTANGULAR; Case Connection: DRAIN;
FDS8858CZ
FDS8858CZ by Onsemi is a Power FET with N-Channel and P-Channel types, ideal for switching applications. It features a 30V DS breakdown voltage, 20A max pulsed drain current, and 0.017 ohm max drain-source resistance. With a small outline package style and operating temperature up to 150°C, it's suitable for various electronic designs.
CSD19536KTT
CSD19536KTT by Texas Instruments is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 806mJ, operating in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has a max ID of 200A and 0.0028 ohm RDS(on), suitable for high-power switching circuits.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
NTHD3100CT1G
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Drain Current (Abs) (ID): 3.2 A; Maximum Time At Peak Reflow Temperature (s): 30;
NTHD3102CT1G
NTHD3102CT1G by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL types, 2 elements with built-in diode. It operates in switching applications, offering a max pulsed drain current of 16A and min DS breakdown voltage of 20V. Ideal for surface mount designs, it has a small outline package style and can handle up to 150°C operating temperature.
NTHD4502NT1G
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.13 W; Operating Mode: ENHANCEMENT MODE; Moisture Sensitivity Level (MSL): 1;
NTHD4508NT1G
NTHD4508NT1G by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 3.1A Drain Current, 0.075 ohm On Resistance, and 12A Pulsed Drain Current. Operating in ENHANCEMENT MODE, it has a max temp of 150°C and fast switching times of 40ns turn on and 26ns turn off.
NTHD2102PT1G
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Drain-Source On Resistance: .058 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NTHD3100CT1
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 20 V;
NTHD3100CT3
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Drain-Source On Resistance: .08 ohm; Maximum Drain Current (Abs) (ID): 3.2 A;
NTHD3100CT3G
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
NTHD3101FT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 20 V; Maximum Drain-Source On Resistance: .08 ohm;
NTHD3101FT1G
NTHD3101FT1G by Onsemi is a P-CHANNEL FET with 20V DS breakdown voltage and 3.2A max drain current. Ideal for switching applications, it features a built-in diode, 0.08 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount with 8 terminals, it can handle up to 13A pulsed drain current.
NTHD3101FT3
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Peak Reflow Temperature (C): 235; Maximum Pulsed Drain Current (IDM): 13 A;
NTHD3101FT3G
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON; Package Body Material: UNSPECIFIED;
NTHD3102CT1
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Maximum Drain Current (ID): 4.4 A; Minimum DS Breakdown Voltage: 20 V;
NTHD4508NT1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.13 W; No. of Elements: 1; Terminal Position: DUAL;
NTHD4P02FT1
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Pulsed Drain Current (IDM): 9 A; Maximum Drain Current (Abs) (ID): 2.1 A;
NTHD4P02FT1G
NTHD4P02FT1G by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage and 2.2A Drain Current. Ideal for SWITCHING applications, it features a 37ns Turn On Time, -55 to 150°C Operating Temperature range, and a compact SMALL OUTLINE package style.
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