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NDUL03N150CG

Onsemi

NDUL03N150CG by Onsemi

NDUL03N150CG by Onsemi is a Power FET with 1500V DS Breakdown Voltage, 5A IDM, and 10.5 ohm RDS(on). It is an N-CHANNEL transistor in a RECTANGULAR package suitable for high-voltage applications like power supplies and industrial controls.

Median Price

$1.940

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,892 parts In-Stock

1+ parts

-

100+ parts

$1.830

1k+ parts

$1.640

10k+ parts

$1.540

1,892

-

$1.830

$1.640

$1.540

Verical

USA . 1,352 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.050

10k+ parts

$1.925

1,352

-

-

$2.050

$1.925

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,533 parts In-Stock

1+ parts

$1.938

100+ parts

-

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1,533

$1.938

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Maritex

Poland . 90 parts In-Stock

1+ parts

$11.453

100+ parts

$2.772

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-

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90

$11.453

$2.772

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Cyclops Electronics Ltd

UK . 37,549 parts In-Stock

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37,549

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Vyrian

USA . 5,459 parts In-Stock

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5,459

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Flip Electronics

USA . 1,680 parts In-Stock

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1,680

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Distributors (Availability)

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Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$0.933

100+ parts

$0.849

1k+ parts

$0.765

10k+ parts

-

10

$0.933

$0.849

$0.765

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Corphita

USA . 1,703 parts In-Stock

1+ parts

$1.836

100+ parts

-

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1,703

$1.836

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AZTECH Wire

Italy . 348 parts In-Stock

1+ parts

$10.540

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348

$10.540

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Perfect Parts

USA . 75,609 parts In-Stock

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75,609

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RC Electronics

USA . 47,551 parts In-Stock

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47,551

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ChipstoGo Electronic ltd

UK . 37,534 parts In-Stock

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37,534

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QUARKTWIN TECHNOLOGY LTD

USA . 14,333 parts In-Stock

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14,333

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TANS Electronics

Latvia . 7,495 parts In-Stock

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7,495

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Kulean Microsystems

USA . 7,482 parts In-Stock

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7,482

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A-Z Elektronik GmbH

Germany . 5,342 parts In-Stock

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5,342

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SupplyDigital Components

Austria . 5,306 parts In-Stock

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5,306

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Problanco Electronics

Mexico . 1,256 parts In-Stock

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1,256

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Corohmni

South Africa . 413 parts In-Stock

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413

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GreenTree Electronics

Israel . 110 parts In-Stock

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110

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Kepictronics

USA . 96 parts In-Stock

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96

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UHIMA Technologies

Türkiye . 9 parts In-Stock

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9

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Overview

Enhance your power management systems with the NDUL03N150CG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that meet the highest standards. The NDUL03N150CG falls under the Power Field Effect Transistors category, offering enhanced performance and reliability. With a minimum DS Breakdown Voltage of 1500V and a Maximum Pulsed Drain Current of 5A, this transistor is a powerhouse for various applications. Trust Onsemi to provide exceptional value and benefits, ensuring that your power systems operate efficiently and effectively.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: N-CHANNEL

Offers better efficiency and performance compared to P-channel transistors, making it a suitable choice for various applications.

Minimum DS Breakdown Voltage: 1500 V

High breakdown voltage allows for reliable operation in high voltage applications, ensuring safety and stability.

Package Shape: RECTANGULAR

Rectangular shape allows for easier placement and mounting on circuit boards, improving overall design flexibility.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and ease of soldering during assembly, enhancing reliability.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation offers faster switching speeds and lower power consumption, ideal for efficient power management.

Maximum Pulsed Drain Current (IDM): 5 A

High pulsed drain current capability allows for handling short-duration peak loads without compromising performance.

Avalanche Energy Rating (EAS): 34 mJ

High avalanche energy rating ensures robustness and protection against voltage spikes or surges, enhancing reliability.

No. of Terminals: 3

Simple three-terminal configuration simplifies circuit design and installation, making it user-friendly for various applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design provides mechanical stability and heat dissipation, contributing to overall performance and longevity.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high switching speeds and low power consumption, making it suitable for modern electronics.

Transistor Element Material: SILICON

Silicon material provides excellent thermal conductivity and reliability, ensuring consistent performance over a wide range of operating conditions.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and corrosion resistance, increasing the durability and longevity of the product.

Maximum Drain Current (ID): 2.5 A

Sufficient drain current rating allows for handling continuous current flow within specified limits, ensuring stable operation.

Maximum Drain-Source On Resistance: 10.5 ohm

Low drain-source on resistance minimizes power loss and heat generation, improving efficiency and overall performance.

Terminal Position: SINGLE

Single terminal position simplifies connection and integration into circuit designs, facilitating ease of use and installation.

Technical Specifications

Power Field Effect Transistors (FET) NDUL03N150CG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

34 mJ

Minimum DS Breakdown Voltage:

1500 V

Maximum Drain Current (ID):

2.5 A

Maximum Drain-Source On Resistance:

10.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

5 A

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Trade Compliance

NDUL03N150CG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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