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NIC9N05TS1

Onsemi

NIC9N05TS1 by Onsemi

NIC9N05TS1 by Onsemi is a N-CHANNEL FET with SINGLE configuration, suitable for surface mount applications. Features include 150 °C max operating temp, 260°C peak reflow temp, and METAL-OXIDE SEMICONDUCTOR technology. Ideal for power management in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 7,797 parts In-Stock

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Digiode

USA . 2,483 parts In-Stock

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AZTECH Wire

Italy . 912 parts In-Stock

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$11.220

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912

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QUARKTWIN TECHNOLOGY LTD

USA . 8,845 parts In-Stock

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Problanco Electronics

Mexico . 7,531 parts In-Stock

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Microchip USA

USA . 5,139 parts In-Stock

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SupplyDigital Components

Austria . 4,331 parts In-Stock

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TANS Electronics

Latvia . 4,170 parts In-Stock

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Kulean Microsystems

USA . 3,885 parts In-Stock

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Corphita

USA . 1,033 parts In-Stock

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UHIMA Technologies

Türkiye . 538 parts In-Stock

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Corohmni

South Africa . 447 parts In-Stock

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Vigor

Singapore . 262 parts In-Stock

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Overview

Enhance your electronic devices with the NIC9N05TS1 by Onsemi, a top-quality N-CHANNEL Power Field Effect Transistor. Manufactured by Onsemi, known for their reliability and innovation in semiconductor technology, this single-configured FET offers superior performance and efficiency. Ideal for a wide range of applications, from power supplies to motor control systems, this surface mount transistor provides value and benefits that will elevate your designs to the next level. Trust Onsemi for cutting-edge technology that delivers results.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs offer lower ON resistance and higher current carrying capacity, making them suitable for high power applications.

Surface Mount: YES

Surface mount technology allows for easier and more efficient PCB assembly, saving space and reducing manufacturing costs.

No. of Terminals: 4

Having 4 terminals provides flexibility in circuit design and allows for more precise control over the FET's operation.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C ensures reliable performance in a wide range of operating conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-Oxide Semiconductor technology offers high switching speeds, low gate drive power requirements, and high input impedance.

Technical Specifications

Power Field Effect Transistors (FET) NIC9N05TS1 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-XUUC-N4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

UPPER

Trade Compliance

NIC9N05TS1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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