Loading...

NTP45N06G

Onsemi

NTP45N06G by Onsemi

NTP45N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its 150A Pulsed Drain Current and 125W Power Dissipation capabilities in ENHANCEMENT MODE operation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,544 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,544

-

-

-

-

Digiode

USA . 1,836 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,836

-

-

-

-

North Shore Components

USA . 1,123 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,123

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 5 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 466 parts In-Stock

1+ parts

$17.630

100+ parts

-

1k+ parts

-

10k+ parts

-

466

$17.630

-

-

-

Component Stockers USA

USA . 660 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

660

$99.990

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,986

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 25,698 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

25,698

-

-

-

-

Kepictronics

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,000

-

-

-

-

Kulean Microsystems

USA . 7,862 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,862

-

-

-

-

Problanco Electronics

Mexico . 6,256 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,256

-

-

-

-

SupplyDigital Components

Austria . 5,698 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,698

-

-

-

-

TANS Electronics

Latvia . 5,388 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,388

-

-

-

-

Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

Corphita

USA . 604 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

604

-

-

-

-

UHIMA Technologies

Türkiye . 587 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

587

-

-

-

-

Corohmni

South Africa . 338 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

338

-

-

-

-

Perfect Parts

USA . 55 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

55

-

-

-

-

Overview

Upgrade your power management system with the NTP45N06G by Onsemi. This high-quality N-channel Power FET offers unparalleled performance and reliability for switching applications. With a maximum drain current of 45A and a low on-resistance of 0.026 ohm, this transistor delivers superior power efficiency. Whether you need to control voltage levels or regulate power flow, the NTP45N06G is the perfect solution. Trust Onsemi's expertise in semiconductor technology to provide you with the best-in-class components for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protects the internal components from external damage.

Polarity or Channel Type: N-CHANNEL

Allows for efficient transfer of electrons, enhancing the transistor's performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by eliminating the need for an external diode.

Transistor Application: SWITCHING

Suitable for switching applications in various electronic systems.

Minimum DS Breakdown Voltage: 60 V

Ensures safety and reliability in high-voltage environments.

Package Shape: RECTANGULAR

Easy to handle and mount on circuit boards.

Maximum Pulsed Drain Current (IDM): 150 A

Capable of handling high current loads during short pulses.

Avalanche Energy Rating (EAS): 240 mJ

Provides protection against avalanche breakdown events.

Maximum Drain Current (Abs) (ID): 45 A

Suitable for medium to high current applications.

Maximum Power Dissipation (Abs): 125 W

Can dissipate heat efficiently for reliable operation.

Package Style (Meter): FLANGE MOUNT

Facilitates easy mounting and secure connection in various systems.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high performance and low power consumption.

Maximum Operating Temperature: 175 °C

Can operate efficiently in high-temperature environments.

Transistor Element Material: SILICON

Offers high reliability and performance as a semiconductor material.

Terminal Finish: Tin (Sn)

Provides corrosion resistance and reliable electrical contact.

Maximum Drain-Source On Resistance: 0.026 ohm

Ensures low on-resistance for efficient power transfer.

Terminal Position: SINGLE

Simplifies connection and installation in circuits.

Case Connection: DRAIN

Facilitates easy current flow and connection in the circuit.

Maximum Time At Peak Reflow Temperature (s): 40

Ensures reliable soldering during assembly processes.

Peak Reflow Temperature °C: 260

Suitable for high-temperature reflow soldering processes.

Technical Specifications

Power Field Effect Transistors (FET) NTP45N06G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

240 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

45 A

Maximum Drain Current (ID):

45 A

Maximum Drain-Source On Resistance:

.026 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

150 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTP45N06G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7