Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
NTP45N06 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its 150A Pulsed Drain Current and 125W Power Dissipation capabilities in ENHANCEMENT MODE operation.
Median Price
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Vyrian
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Digiode
ACDS - Activité Composants Distribution Service
AZTECH Wire
$1.910
$1.830
$1.800
$1.760
Metaverse IC Inc.
Kepictronics
TANS Electronics
A-Z Elektronik GmbH
QUARKTWIN TECHNOLOGY LTD
Kulean Microsystems
SupplyDigital Components
Problanco Electronics
Corphita
UHIMA Technologies
Corohmni
Plastic/Epoxy material provides durability and resistance to environmental factors, making the FET suitable for a variety of applications.
N-channel FETs typically offer higher efficiency and faster switching speeds compared to P-channel FETs, making them ideal for many power applications.
With a minimum breakdown voltage of 60V, this FET can handle high voltage applications with ease, ensuring reliable performance.
The high pulsed drain current rating of 150A allows the FET to handle large current spikes, making it suitable for demanding applications.
The high power dissipation rating of 125W ensures that the FET can handle high power levels without overheating, making it a reliable choice for power applications.
With a maximum operating temperature of 175 °C, this FET can operate in high-temperature environments without performance degradation.
The low on-resistance of 0.026 ohms ensures efficient power handling and minimal power loss, making this FET ideal for high-performance applications.
Power Field Effect Transistors (FET) NTP45N06 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
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NTP45N06 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.29.00.95
SB
8541.29.00.80
PCN Obsolescence/ EOL - Multiple Devices 03/Jan/2008
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
1N4148WS
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
2N2222A
Philips Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Gec Plessey Semiconductors
BSS138
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
EU2B-YS3203F
Idec
ROTARY SWITCH;
SN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
LM317T
Motorola
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; No. of Outputs: 1; Package Equivalence Code: SIP3,.1TB;
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N4148
Compensated Devices
RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;
LP2950CDT-3.3G
Onsemi
LP2950CDT-3.3G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 3.3V and max output current of 0.1A. It has a small outline package style, operates at temperatures ranging from -40 to 125 °C, and is suitable for applications requiring low dropout voltage and precise voltage regulation in electronic circuits.
350766-1
TE Connectivity
TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.
Good-ark Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 6 ohm; Minimum DS Breakdown Voltage: 50 V; Operating Mode: ENHANCEMENT MODE;
C0805C104K5RACTU
KEMET Corporation
KEMET C0805C104K5RACTU is a ceramic capacitor with 0.1uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125 °C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and reliable performance.
North American Philips Discrete Products Div
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): .2 A;
LM7805CT/NOPB
National Semiconductor
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Max): 125 Cel; Maximum Output Voltage-1: 5.25 V;
LM317AEMP/NOPB
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: SOP; Terminal Form: GULL WING; Qualification Status: Not Qualified; Width: 3.56 mm;
ABS07-32.768KHZ-T
Abracon
Abracon ABS07-32.768KHZ-T crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring 0.032768 MHz frequency precision in a compact surface-mount design with gold over nickel finish.
LL4148
Silicon Standard
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
DMG6602SVT-7
Diodes Incorporated
DMG6602SVT-7 by Diodes Inc. is a Power FET with N/P-channel, 30V DS breakdown voltage, and 0.06 ohm max RDS(on). Ideal for switching applications, it features 2 elements in separate configuration with built-in diode. With 13A IDM and small outline package style, it operates at up to 150°C.
BSS138BK,215
NXP Semiconductors
NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
IRLML0060TRPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Moisture Sensitivity Level (MSL): 1; Package Body Material: PLASTIC/EPOXY;
FDS4935A
FDS4935A by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 30V. It has a max drain current of 7A and a max drain-source on resistance of 0.023 ohm. This transistor is commonly used for switching applications in various electronic devices.
AUIRF7341QTR
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Terminal Form: GULL WING; Avalanche Energy Rating (EAS): 140 mJ;
IRLR024NTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Additional Features: LOGIC LEVEL COMPATIBLE, AVALANCHE RATED; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
FDS4465
FDS4465 by Onsemi is a P-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 20V. It is used for switching applications and has a max drain current of 13.5A and max power dissipation of 2.5W.
FDC5614P
TAIZHOU ELECTRONICS CO LTD
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.92 W; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY;
FDB52N20TM
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 357 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Position: SINGLE;
NDT3055L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY;
STP11NK50ZFP
STMicroelectronics
STP11NK50ZFP by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 40A IDM, and 0.52 ohm RDS(on). Ideal for SWITCHING applications due to its 30W power dissipation, 190mJ EAS rating, and ENHANCEMENT MODE operation at up to 150°C.
IRF3205LPBF
Infineon Technologies
IRF3205LPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 390A IDM, 264mJ EAS, and 0.008 ohm RDS(on). With a max power dissipation of 200W and operating temperature of 175°C, it's suitable for high-power circuits requiring efficient switching capabilities.
IRF7416TRPBF
IRF7416TRPBF by Infineon Technologies is a P-CHANNEL power FET with a min DS breakdown voltage of 30V. It is used for switching applications and has a max pulsed drain current of 45A.
2N7002
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;
SPP08N80C3
SPP08N80C3 by Infineon Technologies is a power FET with a min DS breakdown voltage of 800V. It has a max pulsed drain current of 24A and an avalanche energy rating of 340mJ. This N-channel transistor is commonly used in applications requiring high power dissipation and temperature resistance.
SPP08N80C3XKSA1
SPP08N80C3XKSA1 by Infineon Technologies is a power FET with a min DS breakdown voltage of 800V. It has a max pulsed drain current of 24A and an avalanche energy rating of 340mJ. This N-channel transistor is commonly used in applications requiring high voltage and current handling capabilities.
IPP120P04P4L03AKSA2
IPP120P04P4L03AKSA2 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 480A IDM, and 0.0052 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance and 175°C max operating temp.
IRLML2502TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain-Source On Resistance: .045 ohm;
IRF7304TRPBF
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Additional Features: LOGIC LEVEL COMPATIBLE; Moisture Sensitivity Level (MSL): 1;
IRF640
Thomson Consumer Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): 18 A;
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NTP4302
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; JEDEC-95 Code: TO-220AB; Maximum Pulsed Drain Current (IDM): 175 A;
NTP4302G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Peak Reflow Temperature (C): 260; Maximum Drain-Source On Resistance: .0093 ohm;
NTP45N06G
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 3; Maximum Drain Current (ID): 45 A;
NTP45N06L
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 2.4 W; JESD-609 Code: e0; No. of Elements: 1;
NTP45N06LG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING;
NTP4804NG
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 133 A;
NTP4813NLT4G
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Operating Temperature: 175 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
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