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STY60NK30Z

STMicroelectronics

STY60NK30Z by STMicroelectronics

STY60NK30Z by STMicroelectronics is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 240A IDM and 0.045 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The transistor comes in a RECTANGULAR package with Matte Tin finish, offering high power dissipation of 450W.

Median Price

$11.585

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 90 parts In-Stock

1+ parts

$7.740

100+ parts

$3.910

1k+ parts

-

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90

$7.740

$3.910

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-

Arrow

USA . 40 parts In-Stock

1+ parts

$8.550

100+ parts

$7.073

1k+ parts

$5.834

10k+ parts

-

40

$8.550

$7.073

$5.834

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Farnell

UK . 299 parts In-Stock

1+ parts

$10.210

100+ parts

$7.390

1k+ parts

$6.950

10k+ parts

-

299

$10.210

$7.390

$6.950

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Newark

USA . 67 parts In-Stock

1+ parts

$12.960

100+ parts

$8.150

1k+ parts

$7.180

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-

67

$12.960

$8.150

$7.180

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Mouser Electronics

USA . 407 parts In-Stock

1+ parts

$14.280

100+ parts

$7.870

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-

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407

$14.280

$7.870

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-

DigiKey

USA . 226 parts In-Stock

1+ parts

$14.280

100+ parts

$8.666

1k+ parts

$6.789

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226

$14.280

$8.666

$6.789

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Element14

Singapore . 299 parts In-Stock

1+ parts

$17.350

100+ parts

$12.430

1k+ parts

$10.780

10k+ parts

-

299

$17.350

$12.430

$10.780

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EBV Elektronik

Germany . 3,510 parts In-Stock

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3,510

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Avnet

USA . 1,290 parts In-Stock

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1,290

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Verical

USA . 582 parts In-Stock

1+ parts

-

100+ parts

$7.731

1k+ parts

$6.784

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582

-

$7.731

$6.784

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,951 parts In-Stock

1+ parts

$7.353

100+ parts

-

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4,951

$7.353

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Nova Conductors

Japan . 78 parts In-Stock

1+ parts

$8.820

100+ parts

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78

$8.820

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TME

Poland . 6 parts In-Stock

1+ parts

$13.390

100+ parts

$7.690

1k+ parts

$6.570

10k+ parts

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6

$13.390

$7.690

$6.570

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Sensible Micro Corp

USA . 42,290 parts In-Stock

1+ parts

-

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42,290

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-

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Vyrian

USA . 4,131 parts In-Stock

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4,131

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Anansix

USA . 2,728 parts In-Stock

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2,728

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ComSIT Distribution GmbH

Germany . 30 parts In-Stock

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30

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 868 parts In-Stock

1+ parts

$0.900

100+ parts

-

1k+ parts

-

10k+ parts

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868

$0.900

-

-

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Corohmni

South Africa . 855 parts In-Stock

1+ parts

$0.996

100+ parts

-

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-

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855

$0.996

-

-

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IDEA Electronic Components Group

UK . 1,833 parts In-Stock

1+ parts

$1.666

100+ parts

-

1k+ parts

$1.500

10k+ parts

-

1,833

$1.666

-

$1.500

-

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$1.912

100+ parts

$1.816

1k+ parts

$1.816

10k+ parts

-

2,500

$1.912

$1.816

$1.816

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MKK Technologies

India . 751 parts In-Stock

1+ parts

$3.133

100+ parts

-

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-

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751

$3.133

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DigiPath Technology Company

USA . 751 parts In-Stock

1+ parts

$3.133

100+ parts

-

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-

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751

$3.133

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Ampacity Inc.

Singapore . 403 parts In-Stock

1+ parts

$6.220

100+ parts

-

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403

$6.220

-

-

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Semicontronic

India . 283 parts In-Stock

1+ parts

$6.220

100+ parts

$6.064

1k+ parts

$6.033

10k+ parts

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283

$6.220

$6.064

$6.033

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Corphita

USA . 3,680 parts In-Stock

1+ parts

$6.966

100+ parts

-

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3,680

$6.966

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Continental Prestige Electronics

USA . 319 parts In-Stock

1+ parts

$8.490

100+ parts

-

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$8.320

319

$8.490

-

-

$8.320

Modulus Dynamics

Lithuania . 31 parts In-Stock

1+ parts

$9.472

100+ parts

$9.377

1k+ parts

$9.093

10k+ parts

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31

$9.472

$9.377

$9.093

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Microchip USA

USA . 4,529 parts In-Stock

1+ parts

$35.644

100+ parts

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4,529

$35.644

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A-Z Elektronik GmbH

Germany . 7,287 parts In-Stock

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7,287

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Kepictronics

USA . 7,200 parts In-Stock

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7,200

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Perfect Parts

USA . 6,242 parts In-Stock

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6,242

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iodParts Technologies Inc.

India . 6,242 parts In-Stock

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6,242

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Lixinc

USA . 4,128 parts In-Stock

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4,128

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Robosynatics

Brazil . 3,000 parts In-Stock

1+ parts

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$3.825

1k+ parts

$3.825

10k+ parts

$3.825

3,000

-

$3.825

$3.825

$3.825

Lucentia Tech

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

$3.825

1k+ parts

$3.825

10k+ parts

$3.825

3,000

-

$3.825

$3.825

$3.825

Argo Parts USA

USA . 2,575 parts In-Stock

1+ parts

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2,575

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-

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Parana Technologies

USA . 2,200 parts In-Stock

1+ parts

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100+ parts

$1.992

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2,200

-

$1.992

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Alle Elektronik GmbH

Germany . 1,365 parts In-Stock

1+ parts

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1,365

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Netroflash

USA . 500 parts In-Stock

1+ parts

-

100+ parts

$8.644

1k+ parts

$8.379

10k+ parts

$8.203

500

-

$8.644

$8.379

$8.203

Eastek

USA . 270 parts In-Stock

1+ parts

-

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270

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Overview

Unleash the power of innovation with the STY60NK30Z by STMicroelectronics, a high-quality N-CHANNEL Power Field Effect Transistor designed for switching applications. With a maximum drain current of 60A and an avalanche energy rating of 700mJ, this transistor offers unparalleled performance and reliability. Whether you're looking to enhance your electronic designs or boost efficiency in your power systems, the STY60NK30Z is the ideal choice. Trust STMicroelectronics for cutting-edge technology and superior products that deliver value and unmatched benefits to customers worldwide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is typically lightweight and durable, making the transistor easy to handle and install in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs generally offer better performance characteristics and are commonly used in power applications due to their lower on-state resistance.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode can protect the circuit from voltage spikes and reverse current flows, enhancing the reliability of the transistor in switching applications.

Transistor Application: SWITCHING

Designed for applications where the transistor is used for switching on/off high currents, ensuring efficient control of power flow in the circuit.

Minimum DS Breakdown Voltage: 300 V

With a high breakdown voltage, this transistor can handle large voltage differentials without failing, making it suitable for power applications.

Maximum Pulsed Drain Current (IDM): 240 A

The high pulsed drain current rating allows the transistor to handle short bursts of high current, making it suitable for high-power applications.

Avalanche Energy Rating (EAS): 700 mJ

The high avalanche energy rating indicates the ability of the transistor to absorb energy during breakdowns, improving its reliability in tough operating conditions.

Maximum Drain-Source On Resistance: 0.045 ohm

With low on-resistance, the transistor can efficiently conduct current with minimal losses, leading to improved power efficiency in the circuit.

Technical Specifications

Power Field Effect Transistors (FET) STY60NK30Z attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Avalanche Energy Rating (EAS):

700 mJ

Minimum DS Breakdown Voltage:

300 V

Maximum Drain Current (Abs) (ID):

60 A

Maximum Drain Current (ID):

60 A

Maximum Drain-Source On Resistance:

.045 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

240 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STY60NK30Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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