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NTBL070N65S3

Onsemi

NTBL070N65S3 by Onsemi

NTBL070N65S3 by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 110A and EAS of 214mJ, suitable for high-power operations. With a Drain Current of 44A and 0.07 ohm RDS(on), it offers efficient performance in ENHANCEMENT MODE operation.

Median Price

$5.671

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,517 parts In-Stock

1+ parts

-

100+ parts

$5.180

1k+ parts

$4.630

10k+ parts

$4.360

3,517

-

$5.180

$4.630

$4.360

Verical

USA . 3,238 parts In-Stock

1+ parts

-

100+ parts

$6.162

1k+ parts

$5.513

10k+ parts

-

3,238

-

$6.162

$5.513

-

Distributors (In-Stock)

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Digiode

USA . 2,430 parts In-Stock

1+ parts

$5.206

100+ parts

-

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2,430

$5.206

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Vyrian

USA . 7,264 parts In-Stock

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7,264

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Flip Electronics

USA . 4,000 parts In-Stock

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4,000

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Distributors (Availability)

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Corphita

USA . 2,108 parts In-Stock

1+ parts

$4.932

100+ parts

-

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2,108

$4.932

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Corohmni

South Africa . 483 parts In-Stock

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$5.480

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483

$5.480

-

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AZTECH Wire

Italy . 374 parts In-Stock

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$14.340

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374

$14.340

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QUARKTWIN TECHNOLOGY LTD

USA . 19,785 parts In-Stock

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19,785

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Microchip USA

USA . 11,454 parts In-Stock

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11,454

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SupplyDigital Components

Austria . 2,629 parts In-Stock

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2,629

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Problanco Electronics

Mexico . 2,090 parts In-Stock

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Kulean Microsystems

USA . 1,428 parts In-Stock

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TANS Electronics

Latvia . 851 parts In-Stock

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851

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UHIMA Technologies

Türkiye . 831 parts In-Stock

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831

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Overview

Experience superior performance and unmatched reliability with the NTBL070N65S3 by Onsemi. As a leading manufacturer in the industry, Onsemi's Power Field Effect Transistors are designed to excel in switching applications, offering customers high efficiency and precise control. With a maximum pulsing drain current of 110A and a minimum DS breakdown voltage of 650V, this N-channel transistor delivers exceptional power handling capabilities. Trust Onsemi for cutting-edge technology and innovative solutions that meet your needs. Elevate your projects with the NTBL070N65S3 and unleash its potential across a wide range of applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET, making it suitable for a wide range of applications.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving space and simplifying manufacturing processes.

Minimum DS Breakdown Voltage: 650 V

Can handle high voltage applications, ensuring reliable performance in demanding environments.

Maximum Pulsed Drain Current (IDM): 110 A

Capable of handling high peak currents, making it suitable for power switching applications.

Avalanche Energy Rating (EAS): 214 mJ

Provides protection against voltage spikes and inductive loads, improving the overall reliability of the FET.

Maximum Power Dissipation (Abs): 312 W

Can dissipate heat effectively, allowing for continuous operation at high power levels without overheating.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, making it suitable for industrial applications.

Maximum Drain-Source On Resistance: 0.07 ohm

Low on-resistance leads to reduced power losses and improved efficiency in power switching applications.

Technical Specifications

Power Field Effect Transistors (FET) NTBL070N65S3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

214 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

650 V

Maximum Drain Current (ID):

44 A

Maximum Drain-Source On Resistance:

.07 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

14.6 pF

JESD-30 Code:

R-PSSO-F8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

110 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTBL070N65S3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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