Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NTBL050N65S3H by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, 132A IDM, and 0.05 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 305W power dissipation.
Median Price
$10.770
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Mouser Electronics
1+ parts
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$6.220
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$6.000
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$5.810
DigiKey
$10.790
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$5.082
Element14
$14.360
$9.800
$8.210
$7.270
Rochester
$5.080
$4.550
$4.280
Verical
$6.350
$5.688
$5.350
Digiode
$5.368
Vyrian
$5.650
Flip Electronics
Corphita
$5.085
Corohmni
Component Stockers USA
$9.400
$6.720
$5.330
Microchip USA
$15.686
QUARKTWIN TECHNOLOGY LTD
SupplyDigital Components
Problanco Electronics
TANS Electronics
Continental Prestige Electronics
$4.470
$4.410
UHIMA Technologies
Kulean Microsystems
The use of plastic/epoxy material in the package body makes the product lightweight and durable, ideal for applications where weight and durability are important factors.
N-channel FETs typically offer better performance and efficiency compared to P-channel FETs, making this product a good choice for high-performance applications.
With a high minimum breakdown voltage of 650 V, this FET can handle high voltage applications, providing reliable and efficient performance in such scenarios.
The high maximum pulsed drain current rating of 132 A allows the FET to handle high current pulses effectively, making it suitable for applications that require high power handling capabilities.
With a maximum power dissipation rating of 305 W, this FET can dissipate heat efficiently, ensuring reliable and stable operation even under high power conditions.
The high maximum operating temperature of 150 °C allows the FET to operate effectively in high temperature environments, making it suitable for a wide range of applications.
Power Field Effect Transistors (FET) NTBL050N65S3H attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Avalanche Energy Rating (EAS):
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Minimum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Maximum Pulsed Drain Current (IDM):
Surface Mount:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
NTBL050N65S3H Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Assembly/Origin - NTBL Series ASSY 25/Sep/2023
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
CR0805-FX-10R0ELF
Bourns
Bourns CR0805-FX-10R0ELF is a SMT fixed resistor with 10 ohm resistance, 1% tolerance, and 0.125 W power dissipation. Ideal for applications requiring a temperature range of -55 to 155 °C, such as automotive electronics and industrial control systems.
SMBJ18CA
KYOCERA AVX
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Sangdest Microelectronics (Nanjing)
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
1N4148
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Nexperia
Compensated Devices
RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;
M39029/56351
Esterline Technologies
CONNECTOR ACCESSORY; IEC Conformity: NO; Contact Gender: FEMALE; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT; Tool Settings: M22520/2-10;
M39029/56-351
Defense Logistics Agency
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Mating Contacts: M39029/58-363; Removal Tool Sources: MILITARY; Alternate Contact Sources: MILITARY;
2N2222A
Motorola
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;
LL4148
Daco Semiconductor
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Leshan Radio
Surge Components
SS14
Sensitron Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MBRS360T3G
Onsemi
MBRS360T3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.63V and a max output current of 3A. It is designed for applications requiring high-speed switching and low power loss, making it suitable for use in various electronic devices.
ESD5Z5.0T1G
ESD5Z5.0T1G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 5V reverse test voltage and 174W peak power dissipation. It is used for transient suppression in electronic circuits, meeting IEC-61000-4-2, 4-4 standards and UL recognized for reliability.
L7805CV
STMicroelectronics
L7805CV by STMicroelectronics is a fixed positive single output standard regulator with an output voltage of 5V and max current of 1.5A. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring stable voltage regulation in electronic circuits.
2N7002
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
1554216002
Molex
WIRE AND CABLE;
Alpha & Omega Semiconductor
IPZ40N04S5L7R4ATMA1
Infineon Technologies
Infineon's IPZ40N04S5L7R4ATMA1 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0107 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRFP460
Thomson Consumer Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 20 A;
IRFR5505TRPBF
IRFR5505TRPBF by Infineon is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 64A IDM, 150mJ EAS, and 0.11 ohm RDS(ON). With a max power dissipation of 57W and operating temperature up to 150°C, it's suitable for high-power circuits requiring efficient switching capabilities.
BSC035N10NS5ATMA1
Infineon BSC035N10NS5ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, 0.0035 ohm RDS(on), and 400A IDM. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Features METAL-OXIDE SEMICONDUCTOR tech in a SMALL OUTLINE package with DUAL terminals.
SI7113ADN-T1-GE3
Vishay Intertechnology
SI7113ADN-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 20A IDM, 11.25mJ EAS, and 0.132 ohm Drain-Source On Resistance. Operating from -55 to 150 °C, it has a DUAL Terminal Position and DRAIN Case Connection.
IRF5210PBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 100 V;
FQD12N20LTM-F085
FQD12N20LTM-F085 by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 9A, Max Pulsed Drain Current of 36A, and Max Power Dissipation of 55W. This ENHANCEMENT MODE transistor operates b/w -55 to 150 °C and has a fast turn on/off time for efficient performance.
FDB3632-F085
FDB3632-F085 by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 100V. It is an N-channel transistor with a max drain current of 12A and a max power dissipation of 310W. This transistor is commonly used for switching applications in various industries.
BSC600N25NS3GATMA1
BSC600N25NS3GATMA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 100A IDM, and 0.06 ohm RDS(on). It's used for SWITCHING applications in ENHANCEMENT MODE. The transistor operates b/w -55 to 150 °C and has a max power dissipation of 125W in a SMALL OUTLINE package.
IRFZ44NS
International Rectifier Hirel Products
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Terminal Position: SINGLE;
IRF640NPBF
Infineon's IRF640NPBF is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A Max Pulsed Drain Current and 247mJ Avalanche Energy Rating. Operating in ENHANCEMENT MODE, it has a max power dissipation of 150W and can withstand temperatures from -55 to 175°C.
IRLL110TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE; Additional Features: LOGIC LEVEL COMPATIBLE;
FDS6890A
Fairchild Semiconductor
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 7.5 A; Terminal Finish: MATTE TIN;
IRF530A
Samsung
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .11 ohm;
SIR872ADP-T1-GE3
Vishay Intertechnology's SIR872ADP-T1-GE3 is a N-channel FET with 150V DS breakdown voltage and 100A max pulsed drain current. Ideal for switching applications, it features a built-in diode, 0.018 ohm max drain-source resistance, and operates in enhancement mode.
IRF640
National Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 18 A; JESD-609 Code: e0;
STL57N65M5
STL57N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 90A IDM, 960mJ EAS, and 0.069 ohm RDS(ON). The transistor operates in ENHANCEMENT MODE and has a DRAIN case connection.
IRF3205PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Case Connection: DRAIN; No. of Elements: 1;
IAUT300N10S5N015ATMA1
Infineon's IAUT300N10S5N015ATMA1 is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 1200A IDM and 0.0015 ohm RDS(on), it operates in ENHANCEMENT MODE with 44ns ton and 118ns toff. This MOSFET has a max power dissipation of 375W, making it suitable for high-power electronic systems.
FDD6685
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Qualification: Not Qualified; JESD-30 Code: R-PSSO-G2;
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NTBLS4D0N15MC
NTBLS4D0N15MC by Onsemi is a N-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2255A IDM, 332mJ EAS, and 0.0044 ohm Drain-Source Resistance. Operating from -55 to 175 °C, it's a high-power transistor in SMALL OUTLINE package suitable for various industrial uses.
NTBLS1D1N08H
NTBLS1D1N08H by Onsemi is a N-CHANNEL Power FET with 80V DS Breakdown Voltage. It features a max IDM of 900A and EAS of 1580mJ, suitable for high-power applications. With an operating temperature range from -55 to 175°C, it is ideal for power management in various electronic devices.
NTBLS0D7N06C
NTBLS0D7N06C by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.00075 ohm RDS(on). Ideal for power management applications due to its high current handling capacity and low on-resistance. Suitable for use in enhancement mode operation at temperatures ranging from -55°C to 175°C.
NTBL045N065SC1
Power Field-Effect Transistors;
NTBL082N65S3HF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 313 W; Terminal Form: FLAT; Moisture Sensitivity Level (MSL): 1;
NTBL080N60S5H
NTBLS1D5N10MC
NTBLS1D5N10MCTXG
NTBL048N60S5H
NTBL061N60S5H
NTBL100N60S5H
NTBL125N60S5H
NTBL070N65S3
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 312 W; Minimum Operating Temperature: -55 Cel; Package Shape: RECTANGULAR;
NTBL150N60S5H
NTBLS1D5N08MC
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Time At Peak Reflow Temperature (s): 30; JESD-30 Code: R-PSSO-F2;
NTBL060N065SC1
NTBL095N65S3H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 208 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;
NTBLS001N06C
The Onsemi NTBLS001N06C is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 900A IDM, and 0.0009 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in enhancement mode operation at temperatures ranging from -55 to 175 °C.
NTBL075N065SC1
Supply Digital Components
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