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FDB9406L-F085

Onsemi

FDB9406L-F085 by Onsemi

The Onsemi FDB9406L-F085 is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 110A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has an EAS of 217mJ. Suitable for surface mount with GULL WING terminals, it can handle up to 176W power dissipation at temperatures ranging from -55°C to 175°C.

Median Price

$1.366

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 330 parts In-Stock

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$1.073

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Chip1Stop

Japan . 350 parts In-Stock

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$1.660

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$1.660

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Flip Electronics (Authorized)

USA . 27,110 parts In-Stock

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Verical

USA . 330 parts In-Stock

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330

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Digiode

USA . 665 parts In-Stock

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$1.019

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665

$1.019

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Vyrian

USA . 1,740 parts In-Stock

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$1.073

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Flip Electronics

USA . 13,555 parts In-Stock

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Corphita

USA . 1,936 parts In-Stock

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$0.966

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Corohmni

South Africa . 251 parts In-Stock

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$1.073

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

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$1.769

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$1.610

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$1.451

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3,000

$1.769

$1.610

$1.451

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AZTECH Wire

Italy . 35 parts In-Stock

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$11.100

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QUARKTWIN TECHNOLOGY LTD

USA . 18,745 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 6,923 parts In-Stock

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SupplyDigital Components

Austria . 5,054 parts In-Stock

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TANS Electronics

Latvia . 2,819 parts In-Stock

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Perfect Parts

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Native Components

USA . 866 parts In-Stock

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UHIMA Technologies

Türkiye . 411 parts In-Stock

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Problanco Electronics

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Northwest PG Solutions

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Overview

Enhance your power management solutions with the FDB9406L-F085 by Onsemi. Crafted with precision and expertise, Onsemi delivers top-quality Power Field Effect Transistors (FET) that guarantee optimal performance and reliability. Perfect for switching applications, this N-Channel transistor offers a single configuration with a built-in diode, ensuring seamless operation. With a maximum drain current of 110A and an impressive power dissipation of 176W, this transistor excels in enhancing efficiency while maintaining a compact package style. Trust Onsemi to provide innovative solutions that exceed expectations and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET.

Polarity or Channel Type: N-CHANNEL

Allows for effective switching and control of current flow.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies the circuit design by integrating a diode within the FET.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation.

Surface Mount: YES

Enables easy and convenient mounting on a circuit board.

Minimum DS Breakdown Voltage: 40 V

Provides a safe margin for voltage spikes and surges.

Package Shape: RECTANGULAR

Facilitates space-saving and efficient placement on the PCB.

Terminal Form: GULL WING

Ensures secure and reliable connection to the circuit board.

Operating Mode: ENHANCEMENT MODE

Allows for easy control of the FET through gate voltage.

Avalanche Energy Rating (EAS): 217 mJ

Capable of handling energy spikes in the circuit without damage.

Maximum Drain Current (Abs) (ID): 110 A

Ideal for high-current applications.

Maximum Power Dissipation (Abs): 176 W

Can handle high power levels without overheating.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Provides high performance and reliability.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments.

Transistor Element Material: SILICON

Ensures reliable and consistent performance.

Maximum Turn On Time (ton): 90 ns

Enables fast switching and response times.

Minimum Operating Temperature: -55 °C

Can operate in low-temperature conditions.

Maximum Turn Off Time (toff): 145 ns

Ensures efficient turn-off of the FET.

Terminal Finish: MATTE TIN

Provides a reliable and low-resistance terminal finish.

Maximum Drain-Source On Resistance: 0.0022 ohm

Results in minimal power loss and heat generation.

Terminal Position: SINGLE

Simplifies the connection layout on the PCB.

Case Connection: DRAIN

Directs heat away from the FET for improved thermal management.

Peak Reflow Temperature °C: 260

Can withstand high-temperature reflow processes during manufacturing.

Reference Standard: AEC-Q101

Complies with automotive industry standards for quality and reliability.

Technical Specifications

Power Field Effect Transistors (FET) FDB9406L-F085 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

217 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

110 A

Maximum Drain Current (ID):

110 A

Maximum Drain-Source On Resistance:

.0022 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

145 ns

Maximum Turn On Time (ton):

90 ns

Trade Compliance

FDB9406L-F085 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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