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NXH40B120MNQ1SNG

Onsemi

NXH40B120MNQ1SNG by Onsemi

NXH40B120MNQ1SNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features 44A max drain current, 156W power dissipation, and operates in enhancement mode. With a max operating temperature of 150 °C and silicon carbide element material, it offers high performance in various industrial settings.

Median Price

$131.000

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 6 parts In-Stock

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$108.990

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6

$108.990

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DigiKey

USA . 14 parts In-Stock

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$109.060

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$91.685

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14

$109.060

$91.685

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Flip Electronics (Authorized)

USA . 2,898 parts In-Stock

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2,898

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EBV Elektronik

Germany . 504 parts In-Stock

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504

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Arrow

USA . 21 parts In-Stock

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$146.890

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$146.890

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$146.890

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$146.890

$146.890

$146.890

Verical

USA . 21 parts In-Stock

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$146.890

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$146.890

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$146.890

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$146.890

$146.890

$146.890

Chip1Stop

Japan . 21 parts In-Stock

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$131.000

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21

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$131.000

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Distributors (In-Stock)

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Digiode

USA . 297 parts In-Stock

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$80.608

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297

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Vyrian

USA . 6,302 parts In-Stock

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Flip Electronics

USA . 2,898 parts In-Stock

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2,898

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TME

Poland . 504 parts In-Stock

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$116.970

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504

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NAC Semi

USA . 399 parts In-Stock

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$200.000

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$181.810

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399

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$181.810

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Distributors (Availability)

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Corphita

USA . 367 parts In-Stock

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$76.365

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367

$76.365

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Corohmni

South Africa . 191 parts In-Stock

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$110.920

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191

$110.920

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Continental Prestige Electronics

USA . 21 parts In-Stock

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$139.620

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Microchip USA

USA . 4,260 parts In-Stock

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$258.615

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4,260

$258.615

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Problanco Electronics

Mexico . 8,360 parts In-Stock

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Kulean Microsystems

USA . 5,987 parts In-Stock

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5,987

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SupplyDigital Components

Austria . 3,666 parts In-Stock

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TANS Electronics

Latvia . 1,069 parts In-Stock

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UHIMA Technologies

Türkiye . 145 parts In-Stock

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Overview

Discover the power of the NXH40B120MNQ1SNG by Onsemi, a top-quality Power Field Effect Transistor that offers unparalleled performance and reliability. Manufactured by industry leader Onsemi, this N-CHANNEL transistor is perfect for switching applications. With its 1200V minimum DS Breakdown Voltage and maximum Drain Current of 44A, this transistor delivers exceptional power and efficiency. Whether you're in the automotive, industrial, or renewable energy sector, the NXH40B120MNQ1SNG provides the value and benefits you need to take your products to the next level. Experience the advantages of Onsemi technology with this cutting-edge FET solution.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are known for their low ON resistance and high switching speed, making this product ideal for efficient power switching applications.

Minimum DS Breakdown Voltage: 1200 V

With a high minimum breakdown voltage, this FET can handle high voltage applications without the risk of breakdown, ensuring reliable performance.

Maximum Drain Current (ID): 44 A

The high maximum drain current allows this FET to handle high current loads, making it suitable for power switching applications that require high current capabilities.

Maximum Power Dissipation (Abs): 156 W

The high maximum power dissipation rating indicates that this FET can handle power dissipation efficiently without overheating, ensuring its reliability in high-power applications.

Maximum Pulsed Drain Current (IDM): 132 A

The high maximum pulsed drain current rating allows this FET to handle short bursts of high current, making it suitable for applications with varying load requirements.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology offers low ON resistance and fast switching characteristics, making this product energy efficient and suitable for high-speed switching applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures that this FET can withstand elevated temperatures without performance degradation, making it suitable for harsh environmental conditions.

Technical Specifications

Power Field Effect Transistors (FET) NXH40B120MNQ1SNG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

ISOLATED

Configuration:

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain Current (Abs) (ID):

44 A

Maximum Drain Current (ID):

44 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

19 pF

JESD-30 Code:

R-XUFM-X32

No. of Elements:

3

No. of Terminals:

32

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

132 A

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Trade Compliance

NXH40B120MNQ1SNG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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