Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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VNB20N07-E
STMicroelectronics
VNB20N07-E by STMicroelectronics is an N-CHANNEL Power FET with 83W power dissipation. It operates in enhancement mode with 0.07 ohm RDS(on). Ideal for applications requiring fast switching, it features a max turn on time of 580ns and turn off time of 1100ns.
COMPLEX
.07 ohm
METAL-OXIDE SEMICONDUCTOR
TO-263
R-PSSO-G2
1
2
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
83 W
YES
GULL WING
SINGLE
SILICON
1100 ns
580 ns
NCV8406ADTRKG
Onsemi
NCV8406ADTRKG by Onsemi is an N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 0.24 ohm Drain-Source On Resistance, and 2.31W Power Dissipation. This MOSFET operates in ENHANCEMENT MODE with a temperature range of -40 to 150 °C.
110 mJ
DRAIN
60 V
.24 ohm
150 Cel
-40 Cel
2.31 W
AEC-Q101
SWITCHING
DDB2U50N08W1RB23BOMA1
Infineon Technologies
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Body Material: UNSPECIFIED; No. of Elements: 1; No. of Terminals: 9;
ISOLATED
600 V
60 A
.2 ohm
R-XUFM-X9
9
UNSPECIFIED
FLANGE MOUNT
NOT SPECIFIED
100 A
NO
UPPER
TPIC5403DW
Texas Instruments
TPIC5403DW by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 11.25A Max Pulsed Drain Current, and 17.2mJ Avalanche Energy Rating. With a GULL WING terminal form and ENHANCEMENT MODE operation, it offers efficient power management in various electronic systems.
ESD PROTECTED
17.2 mJ
2.3 A
2.25 A
.27 ohm
75 pF
MS-013AD
R-PDSO-G24
4
24
1.39 W
1.4 W
11.25 A
Not Qualified
FET General Purpose Power
DUAL
65 ns
85 ns
TPIC5621LDW
TPIC5621LDW by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 3A Max Pulsed Drain Current, and 18mJ Avalanche Energy Rating. With GULL WING terminals and ENHANCEMENT MODE operation, it offers fast switching capabilities in a SMALL OUTLINE package.
LOGIC LEVEL COMPATIBLE
18 mJ
1 A
.48 ohm
50 pF
MS-013AC
R-PDSO-G20
6
20
1.389 W
3 A
82 ns
110 ns
TPIC5424LDW
TPIC5424LDW by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 60V DS Breakdown Voltage, 3A Pulsed Drain Current, and 0.48 ohm Drain-Source On Resistance. With a package style of SMALL OUTLINE, it operates in ENHANCEMENT MODE with max power dissipation of 1.4W at 150°C.
180 mJ
125 pF
132 ns
VNV35N07
VNV35N07 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.035 ohm Max RDS. It operates in Enhancement Mode, has 10 terminals, and can handle up to 125W power dissipation. Ideal for applications requiring high power handling in compact spaces like automotive electronics.
.035 ohm
R-PDSO-G10
3
10
250
125 W
MATTE TIN
30
1350 ns
800 ns
VNP35N07FI
VNP35N07FI by STMicroelectronics is an N-channel Power FET with a 60V DS breakdown voltage and 0.035 ohm max RDS(on). It operates in enhancement mode with 800ns turn-on time and 1350ns turn-off time. Ideal for power management applications requiring high efficiency and performance.
TO-220AB
R-PSFM-T3
40 W
THROUGH-HOLE
VNB35N07
VNB35N07 by STMicroelectronics is an N-channel Power FET with 60V DS breakdown voltage, 0.035 ohm RDS(on), and 125W power dissipation. Ideal for enhancement mode operation in applications requiring high efficiency and fast switching such as power supplies and motor control systems.
VNB20N07
VNB20N07 by STMicroelectronics is an N-channel Power FET with 83W power dissipation. It operates in enhancement mode with 0.07 ohm on-resistance, making it suitable for high-power applications. The transistor features a fast turn-on time of 580ns and turn-off time of 1100ns, ideal for efficient switching operations.
e3
VNV35N0713TR
VNV35N0713TR by STMicroelectronics is an N-channel MOSFET designed for efficient power management. It features a max DS breakdown voltage of 60V, power dissipation of 125W, and low on-resistance of 0.035Ω, making it ideal for high-performance applications. Its compact SO package ensures easy surface mounting in various electronic devices.
VNB35N0713TR
VNB35N0713TR from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max power dissipation of 125 W, a breakdown voltage of 60 V, and an on-resistance of just 0.035 Ω. Ideal for compact electronic devices, it ensures reliable performance in surface mount configurations.
245
VNB35N07-E
STMicroelectronics VNB35N07-E is a N-CHANNEL FET with 60V DS Breakdown Voltage and 35A ID. Ideal for automotive applications, it features 125W Pd, 0.035 ohm RDS(on), and AEC-Q101 compliance.
35 A
VNB20N0713TR
VNB20N0713TR by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max power dissipation of 83W, low on-resistance of 0.07Ω, and fast turn-on/off times of 580ns and 1100ns, respectively. Ideal for compact electronic designs, it ensures reliable performance in surface mount configurations.
CSD87384MT
CSD87384MT by Texas Instruments is an N-CHANNEL power FET with a min DS breakdown voltage of 30V. It is designed for switching applications and has a max pulsed drain current of 95A.
231 mJ
30 V
.0089 ohm
114 pF
R-PBGA-B5
e4
5
-55 Cel
GRID ARRAY
260
95 A
Nickel/Palladium/Gold (Ni/Pd/Au)
BUTT
BOTTOM
ZXMS6006DGQTA
Diodes Incorporated
ZXMS6006DGQTA by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 13A IDM, and 0.125 ohm Drain-Source Resistance. Ideal for automotive electronics due to AEC-Q101 standard compliance and high temperature range of -40 to 150 °C.
HIGH RELIABILITY
490 mJ
.125 ohm
R-PDSO-G4
13 A
VNV35N07-E
VNV35N07-E by STMicroelectronics is a robust N-channel FET designed for high-efficiency applications. It features a max drain current of 35 A, breakdown voltage of 60 V, and low on-resistance of 0.035 Ω. Ideal for power management in automotive and industrial systems.
DDB2U50N08W1RB23BOMA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; JESD-30 Code: R-XUFM-X9; Maximum Pulsed Drain Current (IDM): 100 A; Maximum Drain-Source On Resistance: .2 ohm;
DF11MR12W1M1B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 2; Minimum DS Breakdown Voltage: 1200 V; Package Body Material: UNSPECIFIED;
1200 V
R-XUFM-P21
21
PIN/PEG
DF23MR12W1M1B11BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Shape: RECTANGULAR; Case Connection: ISOLATED; Operating Mode: ENHANCEMENT MODE;
30 A
R-XUFM-X21
50 A
FPF1C2P5BF07A
FPF1C2P5BF07A by Onsemi is an N-CHANNEL Power FET with 650V DS Breakdown Voltage and 156A IDM. Ideal for POWER CONTROL applications, it features a max power dissipation of 250W, 0.09 ohm RDS(on), and operates b/w -40 to 150 °C.
LOW CONDUCTION LOSS
650 V
36 A
.09 ohm
R-XUFM-X24
250 W
156 A
UL APPROVED
PRESS FIT
POWER CONTROL
TC8020K6-G-M937
Microchip Technology
TC8020K6-G-M937 by Microchip is a complex N- and P-channel FET for switching applications. It operates in enhancement mode with 200V DS breakdown voltage, 8 ohm RDS(on), and 25ns turn-on time. Ideal for high-temperature environments, it features a max operating temperature of 150°C and -55°C min operating temperature.
200 V
8 ohm
7 pF
S-XQCC-N56
56
SQUARE
CHIP CARRIER
N-CHANNEL AND P-CHANNEL
NO LEAD
QUAD
35 ns
25 ns
DF11MR12W1M1B11BPSA1
Infineon's DF11MR12W1M1B11BPSA1 is a N-CHANNEL FET with 1200V DS breakdown voltage, 100A IDM, and operates in enhancement mode. Ideal for high-power applications requiring complex configurations and isolated case connections.
NXH40B120MNQ1SNG
NXH40B120MNQ1SNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features 44A max drain current, 156W power dissipation, and operates in enhancement mode. With a max operating temperature of 150 °C and silicon carbide element material, it offers high performance in various industrial settings.
44 A
19 pF
R-XUFM-X32
32
156 W
132 A
SILICON CARBIDE
NXH027B120MNF2PTG
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 134 W; Terminal Form: UNSPECIFIED; Package Body Material: UNSPECIFIED;
84 A
.038 ohm
64 pF
R-XUFM-X23
23
DEPLETION MODE
134 W
MSCSM170HM12CAG
MSCSM170HM12CAG by Microchip is an N-CHANNEL FET with 1700V DS breakdown voltage, ideal for switching applications. It features 4 elements, 360A IDM, and 0.015 ohm max drain-source resistance. With a max power dissipation of 843W and operating temperature range from -40 to 175 °C, it offers high performance in complex configurations.
1700 V
179 A
.015 ohm
30 pF
R-XUFM-X12
12
175 Cel
843 W
360 A
NXH020U90MNF2PTG
NXH020U90MNF2PTG by Onsemi is a N-CHANNEL FET with 900V DS Breakdown Voltage and 447A IDM. Ideal for SWITCHING applications, it features 0.014 ohm Drain-Source On Resistance and operates b/w -40 to 175 °C.
900 V
149 A
.014 ohm
44 pF
R-XUFM-X20
352 W
447 A
LMG3422R030RQZR
LMG3422R030RQZR by Texas Instruments is a 600V N-CHANNEL FET for SWITCHING applications. It features a max drain current of 55A, 0.035 ohm RDS(on), and operates in ENHANCEMENT MODE. With a temp range of -40 to 125 °C, it's ideal for high-power electronics requiring fast switching speeds.
55 A
S-PQCC-N54
54
125 Cel
NICKEL PALLADIUM GOLD
GALLIUM NITRIDE
86 ns
56 ns
LMG3425R030RQZT
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Turn On Time (ton): 56 ns; Maximum Turn Off Time (toff): 86 ns; Package Shape: SQUARE;
JUNCTION
LMG3425R030RQZR
LMG3425R030RQZR by Texas Instruments is a N-CHANNEL FET with 600V DS Breakdown Voltage, 55A Drain Current, and 0.035 ohm On Resistance. Ideal for SWITCHING applications in DEPLETION MODE, this transistor features GALLIUM NITRIDE technology and operates b/w -40 to 125 °C.
LMG3422R050RQZT
LMG3422R050RQZT by Texas Instruments is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max ID of 44A and 0.055 ohm Drain-Source On Resistance, this ENHANCEMENT MODE transistor operates b/w -40 to 125 °C, with turn on/off times of 56/86 ns.
.055 ohm
LMG3425R050RQZT
LMG3425R050RQZT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features a 600V DS Breakdown Voltage, 44A Drain Current, and 0.055 ohm On Resistance. With an Operating Temperature range of -40 to 125 °C, this MOSFET is ideal for high-power switching systems in various industries.
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