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VNB20N0713TR

STMicroelectronics

VNB20N0713TR by STMicroelectronics

VNB20N0713TR by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max power dissipation of 83W, low on-resistance of 0.07Ω, and fast turn-on/off times of 580ns and 1100ns, respectively. Ideal for compact electronic designs, it ensures reliable performance in surface mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,137 parts In-Stock

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8,137

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Anansix

USA . 2,215 parts In-Stock

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2,215

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Digiode

USA . 2,001 parts In-Stock

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2,001

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IDEA Electronic Components Group

UK . 1,545 parts In-Stock

1+ parts

$1.485

100+ parts

-

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$1.336

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1,545

$1.485

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$1.336

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MKK Technologies

India . 541 parts In-Stock

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$2.792

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541

$2.792

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DigiPath Technology Company

USA . 541 parts In-Stock

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$2.792

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541

$2.792

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AZTECH Wire

Italy . 852 parts In-Stock

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$14.340

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852

$14.340

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Microchip USA

USA . 210 parts In-Stock

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$28.769

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210

$28.769

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Perfect Parts

USA . 1,930 parts In-Stock

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1,930

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Corphita

USA . 1,518 parts In-Stock

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1,518

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Kepictronics

USA . 1,000 parts In-Stock

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1,000

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Parana Technologies

USA . 779 parts In-Stock

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$1.775

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779

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$1.775

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Overview

Unlock exceptional performance with the VNB20N0713TR from STMicroelectronics, a leader in innovative semiconductor solutions. This N-channel power FET ensures efficient energy management for your applications, boasting impressive durability and swift response times. Ideal for automotive and industrial systems, it enhances reliability while reducing energy waste. Choose STMicroelectronics for top-tier quality and innovation, driving your projects toward success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making this FET suitable for a variety of applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer better electron mobility and lower on-resistance, leading to improved efficiency in electronic circuits.

Configuration: COMPLEX

A complex configuration allows for more versatile applications, enabling the design of multi-functional circuits.

Surface Mount: YES

Surface mount technology (SMT) provides space savings and enables automated assembly, making it convenient for modern circuit designs.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement on PCBs and aligns well with standard layout practices.

Terminal Form: GULL WING

Gull wing terminals offer excellent soldering reliability and are suitable for automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for low power consumption until the gate is activated, contributing to energy efficiency.

No. of Terminals: 2

A 2-terminal design leads to a simpler integration into circuit designs, reducing complexity and size.

Maximum Power Dissipation (Abs): 83 W

With a high power dissipation rating, this FET can handle significant power loads, making it suitable for robust applications.

Package Style (Meter): SMALL OUTLINE

Small outline packages are advantageous for compact designs and provide flexibility in circuit board layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology ensures high switching speeds and low power consumption, enhancing overall performance in specific applications.

Transistor Element Material: SILICON

Silicon material is known for its excellent electrical properties, contributing to reliability and performance in electronic components.

Maximum Turn On Time (ton): 580 ns

A quick turn-on time is beneficial for high-speed applications, improving the overall response time of the circuit.

Maximum Turn Off Time (toff): 1100 ns

Fast turn-off times allow for efficient switching in high-frequency applications, enhancing the device's operational performance.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability, ensuring consistent and reliable connections during assembly.

Maximum Drain-Source On Resistance: 0.07 ohm

Low on-resistance translates to lower power losses and heat generation during operation, improving overall efficiency.

Terminal Position: SINGLE

Single terminal positioning simplifies the design and layout process on PCBs, contributing to efficient manufacturing.

Maximum Time At Peak Reflow Temperature (s): 30

A specified peak reflow time supports compatibility with modern soldering processes, ensuring reliable assembly without damage.

Peak Reflow Temperature °C: 245

A high reflow temperature indicates compatibility with a wide range of soldering processes and helps ensure solder integrity.

Technical Specifications

Power Field Effect Transistors (FET) VNB20N0713TR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Configuration:

Maximum Drain-Source On Resistance:

.07 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263

JESD-30 Code:

R-PSSO-G2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1100 ns

Maximum Turn On Time (ton):

580 ns

Trade Compliance

VNB20N0713TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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