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VNB20N07(8957)TR

STMicroelectronics

VNB20N07(8957)TR by STMicroelectronics

STMicroelectronics VNB20N07(8957)TR is an N-CHANNEL FET with 0.07 ohm RDS(on), 83 W Pd, and 580 ns ton. Ideal for power management applications due to its small outline package and enhancement mode operation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,363 parts In-Stock

1+ parts

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2,363

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Digiode

USA . 1,909 parts In-Stock

1+ parts

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1,909

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Anansix

USA . 1,086 parts In-Stock

1+ parts

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1,086

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,086 parts In-Stock

1+ parts

$1.192

100+ parts

-

1k+ parts

$1.073

10k+ parts

-

1,086

$1.192

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$1.073

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MKK Technologies

India . 2,188 parts In-Stock

1+ parts

$2.242

100+ parts

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2,188

$2.242

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DigiPath Technology Company

USA . 2,188 parts In-Stock

1+ parts

$2.242

100+ parts

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2,188

$2.242

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Corphita

USA . 3,476 parts In-Stock

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3,476

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Parana Technologies

USA . 2,017 parts In-Stock

1+ parts

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100+ parts

$1.426

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2,017

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$1.426

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Overview

Enhance the performance of your electronic devices with the VNB20N07(8957)TR by STMicroelectronics, a top-quality N-channel power FET that offers reliable operation and efficient power management. Manufactured by industry leader STMicroelectronics, this transistor is designed for a wide range of applications, from automotive to industrial. With its high power dissipation capabilities and fast turn-on/off times, this FET provides exceptional value and performance for your projects. Upgrade your designs today with the VNB20N07(8957)TR and experience the benefits of superior quality and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good insulation properties and durability.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-resistance and higher overall efficiency compared to P-channel FETs, making them a good choice for many applications.

Configuration: COMPLEX

The complex configuration allows for versatile applications and customization options.

Surface Mount: YES

Surface mount technology makes it easier to mount the FET onto circuit boards, saving space and reducing assembly time.

Package Shape: RECTANGULAR

Rectangular shape ensures easy integration into circuit designs and keeps the overall footprint compact.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer high input impedance and low output impedance, allowing for efficient switching operations.

No. of Terminals: 2

Having only 2 terminals simplifies circuit connections and reduces complexity in setup.

Maximum Power Dissipation (Abs): 83 W

High power dissipation capability allows for handling higher loads without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and facilitates compact circuit designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance, reliability, and efficiency.

Transistor Element Material: SILICON

Silicon-based FETs provide consistent and reliable performance over a wide range of temperatures.

Maximum Turn On Time (ton): 580 ns

Fast turn-on time ensures quick response and efficient switching operation.

Maximum Turn Off Time (toff): 1100 ns

A moderate turn-off time allows for proper discharging of the FET and prevents voltage spikes.

Maximum Drain-Source On Resistance: 0.07 ohm

Low on-resistance minimizes power losses and heat generation during operation.

Terminal Position: SINGLE

Single terminal position simplifies installation and connections, making it user-friendly.

Technical Specifications

Power Field Effect Transistors (FET) VNB20N07(8957)TR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Configuration:

Maximum Drain-Source On Resistance:

.07 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-263

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1100 ns

Maximum Turn On Time (ton):

580 ns

Trade Compliance

VNB20N07(8957)TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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