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TC8020K6-G-M937

Microchip Technology

TC8020K6-G-M937 by Microchip Technology

TC8020K6-G-M937 by Microchip is a complex N- and P-channel FET for switching applications. It operates in enhancement mode with 200V DS breakdown voltage, 8 ohm RDS(on), and 25ns turn-on time. Ideal for high-temperature environments, it features a max operating temperature of 150°C and -55°C min operating temperature.

Median Price

$11.505

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 87 parts In-Stock

1+ parts

$11.505

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87

$11.505

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Vyrian

USA . 4,374 parts In-Stock

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4,374

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 942 parts In-Stock

1+ parts

$9.430

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942

$9.430

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AZTECH Wire

Italy . 410 parts In-Stock

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$10.597

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410

$10.597

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Continental Prestige Electronics

USA . 6,272 parts In-Stock

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$11.505

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$11.275

6,272

$11.505

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$11.275

Netroflash

USA . 50 parts In-Stock

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$11.505

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$10.930

10k+ parts

$10.700

50

$11.505

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$10.930

$10.700

Argo Parts USA

USA . 2,296 parts In-Stock

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RGB Technical Solutions

Ukraine . 1,074 parts In-Stock

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1,074

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Overview

Unleash the power of cutting-edge technology with the TC8020K6-G-M937 by Microchip Technology. As a leading manufacturer in the industry, Microchip Technology delivers unparalleled quality and reliability. This Power FET transistor is perfect for switching applications, offering enhanced performance and efficiency. With its N-CHANNEL AND P-CHANNEL polarity, COMPLEX configuration, and 200V minimum DS breakdown voltage, this transistor is a versatile solution for your electronic needs. Experience the value and benefits of this high-performance component and take your projects to the next level with Microchip Technology's TC8020K6-G-M937.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL AND P-CHANNEL

Having both N-channel and P-channel options provides flexibility for different circuit requirements.

Configuration: COMPLEX

The complex configuration allows for a variety of uses and applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Surface Mount: YES

Suitable for surface mounting, which saves space and simplifies assembly.

Minimum DS Breakdown Voltage: 200 V

High breakdown voltage provides reliability and protection for the circuit.

Package Shape: SQUARE

Square package shape is commonly used and easy to work with.

Terminal Form: NO LEAD

No-lead terminals offer a direct connection for improved connectivity.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for precise control of the transistor.

No. of Elements: 6

Having multiple elements allows for more complex circuit configurations.

No. of Terminals: 56

Having 56 terminals provides ample connectivity options for various circuit designs.

Package Style (Meter): CHIP CARRIER

Chip carrier package style offers durability and protection for the transistor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing MOSFET technology provides high efficiency and fast switching speeds.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliability in various environments.

Transistor Element Material: SILICON

Silicon element material is widely used and provides good performance characteristics.

Maximum Turn On Time (ton): 25 ns

Fast turn-on time of 25 nanoseconds allows for quick switching operations.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures functionality in cold environments.

Maximum Turn Off Time (toff): 35 ns

Fast turn-off time of 35 nanoseconds contributes to efficient switching.

Maximum Drain-Source On Resistance: 8 ohm

Low on-resistance of 8 ohms enables efficient power transfer.

Terminal Position: QUAD

Quad terminal position provides stable connections for reliable performance.

Maximum Feedback Capacitance (Crss): 7 pF

Low feedback capacitance of 7 picofarads reduces the risk of signal distortion.

Technical Specifications

Power Field Effect Transistors (FET) TC8020K6-G-M937 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Microchip Technology

Specs

Configuration:

Minimum DS Breakdown Voltage:

200 V

Maximum Drain-Source On Resistance:

8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

7 pF

JESD-30 Code:

S-XQCC-N56

No. of Elements:

6

No. of Terminals:

56

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

SQUARE

Package Style (Meter):

CHIP CARRIER

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

QUAD

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

35 ns

Maximum Turn On Time (ton):

25 ns

Trade Compliance

TC8020K6-G-M937 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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