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VNV35N0713TR

STMicroelectronics

VNV35N0713TR by STMicroelectronics

VNV35N0713TR by STMicroelectronics is an N-channel MOSFET designed for efficient power management. It features a max DS breakdown voltage of 60V, power dissipation of 125W, and low on-resistance of 0.035Ω, making it ideal for high-performance applications. Its compact SO package ensures easy surface mounting in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 10,636 parts In-Stock

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10,636

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Anansix

USA . 1,824 parts In-Stock

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1,824

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Digiode

USA . 981 parts In-Stock

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981

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Distributors (Availability)

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.419

100+ parts

$0.381

1k+ parts

$0.344

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50

$0.419

$0.381

$0.344

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IDEA Electronic Components Group

UK . 1,500 parts In-Stock

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$1.503

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$1.353

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$1.503

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$1.353

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MKK Technologies

India . 1,203 parts In-Stock

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$2.827

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$2.827

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DigiPath Technology Company

USA . 1,203 parts In-Stock

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$2.827

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$2.827

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AZTECH Wire

Italy . 518 parts In-Stock

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$18.540

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518

$18.540

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Microchip USA

USA . 146 parts In-Stock

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$20.943

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146

$20.943

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Parana Technologies

USA . 2,019 parts In-Stock

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$1.797

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2,019

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$1.797

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Corphita

USA . 1,292 parts In-Stock

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1,292

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Overview

Elevate your designs with the VNV35N0713TR from STMicroelectronics—where quality meets innovation. This high-performance N-channel Power FET is crafted for efficiency and reliability, perfect for a range of applications like motor control, power management, and more. With STMicroelectronics' renowned reputation for excellence, experience enhanced power handling and minimized energy loss, ensuring your projects achieve peak performance while keeping costs down. Unlock the potential of your next design!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy materials ensures durability and resistance to environmental factors, making the product suitable for a wide range of applications.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs are known for their efficiency and higher electron mobility, making them ideal for high-speed switching applications.

Configuration: COMPLEX

Complex configurations allow for advanced functionalities and versatility in circuit designs, enhancing the product's adaptability.

Surface Mount: YES

Surface mount technology contributes to smaller device footprints and easier automated assembly, suitable for modern electronics manufacturing.

Minimum DS Breakdown Voltage: 60 V

A minimum DS breakdown voltage of 60 V ensures robustness in high-voltage applications, providing reliability in demanding environments.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCBs, enabling denser circuit designs.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering and improve connectivity, ensuring reliable electrical connections.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for very low off-state currents, improving efficiency and power management.

No. of Terminals: 10

With 10 terminals, this FET supports complex circuits while maintaining design simplicity and versatility.

Maximum Power Dissipation (Abs): 125 W

A high power dissipation capacity allows the product to handle significant power loads, making it suitable for high-performance applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style helps in achieving compact designs while providing adequate thermal performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology provides high input impedance and low power consumption, making it a preferred choice for many applications.

Transistor Element Material: SILICON

Silicon's properties make it ideal for high-frequency applications, ensuring optimal performance.

Maximum Turn On Time (ton): 800 ns

A maximum turn-on time of 800 ns allows for swift switching, making this FET suitable for high-speed electronic circuits.

Maximum Turn Off Time (toff): 1350 ns

A quick turn-off time helps reduce power loss during transitions, enhancing overall circuit efficiency.

Terminal Finish: MATTE TIN

Matte tin finishes provide excellent solderability and corrosion resistance, ensuring long-term reliability.

Maximum Drain-Source On Resistance: 0.035 ohm

A low on-resistance minimizes conduction losses, improving power efficiency in applications.

Terminal Position: DUAL

Dual terminal positioning enhances layout flexibility on PCBs, accommodating various design requirements.

Moisture Sensitivity Level (MSL): 3

An MSL of 3 indicates moderate sensitivity, requiring careful handling during assembly to prevent moisture-related damage.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient solder reflow processes, enabling reliable assembly with standard soldering techniques.

Peak Reflow Temperature °C: 250

A peak temperature of 250 °C ensures compatibility with modern soldering processes, making it easier to integrate into existing manufacturing workflows.

Technical Specifications

Power Field Effect Transistors (FET) VNV35N0713TR attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Configuration:

Minimum DS Breakdown Voltage:

60 V

Maximum Drain-Source On Resistance:

.035 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G10

Moisture Sensitivity Level (MSL):

3

No. of Elements:

1

No. of Terminals:

10

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

250

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1350 ns

Maximum Turn On Time (ton):

800 ns

Trade Compliance

VNV35N0713TR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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