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NXH40B120MNQ0SNG

Onsemi

NXH40B120MNQ0SNG by Onsemi

NXH40B120MNQ0SNG by Onsemi is a N-CHANNEL FET with 1200V DS breakdown voltage, 38A max drain current, and 0.055 ohm RDS(on). Ideal for switching applications, it features common drain configuration with built-in diode and thermistor. Operating in depletion mode, this MOSFET has a max power dissipation of 118W and can withstand temperatures up to 150 °C.

Median Price

$85.270

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 19 parts In-Stock

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$85.270

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19

$85.270

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EBV Elektronik

Germany . 576 parts In-Stock

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576

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DigiKey

USA . 99 parts In-Stock

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99

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Flip Electronics (Authorized)

USA . 99 parts In-Stock

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99

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Verical

USA . 30 parts In-Stock

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$85.375

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$76.388

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$71.888

30

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$85.375

$76.388

$71.888

Rochester

USA . 30 parts In-Stock

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-

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$68.300

1k+ parts

$61.110

10k+ parts

$57.510

30

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$68.300

$61.110

$57.510

Distributors (In-Stock)

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Digiode

USA . 1,816 parts In-Stock

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$81.016

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Vyrian

USA . 3,730 parts In-Stock

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3,730

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TME

Poland . 576 parts In-Stock

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$87.130

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576

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NAC Semi

USA . 456 parts In-Stock

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$188.850

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$171.680

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456

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$171.680

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Flip Electronics

USA . 183 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,389 parts In-Stock

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$76.752

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2,389

$76.752

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Corohmni

South Africa . 109 parts In-Stock

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$85.280

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Continental Prestige Electronics

USA . 14 parts In-Stock

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$96.680

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Microchip USA

USA . 7,279 parts In-Stock

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$179.085

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$179.085

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TANS Electronics

Latvia . 6,825 parts In-Stock

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Kulean Microsystems

USA . 5,058 parts In-Stock

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SupplyDigital Components

Austria . 4,001 parts In-Stock

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Problanco Electronics

Mexico . 1,669 parts In-Stock

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UHIMA Technologies

Türkiye . 683 parts In-Stock

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683

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Overview

Unleash the power of innovation with the NXH40B120MNQ0SNG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Field Effect Transistors that are perfect for switching applications. With a minimum DS Breakdown Voltage of 1200 V and Maximum Pulsed Drain Current of 114 A, this N-CHANNEL transistor offers unmatched performance and reliability. Whether you're looking to optimize your power management system or enhance the efficiency of your electronic devices, the NXH40B120MNQ0SNG is the ideal solution. Trust Onsemi to provide you with cutting-edge technology that exceeds expectations and revolutionizes the way you work.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors are commonly used in power applications and offer lower conduction losses compared to P-CHANNEL transistors.

Minimum DS Breakdown Voltage: 1200 V

High breakdown voltage allows for the handling of high voltages in power applications, ensuring robust performance and reliability.

Maximum Pulsed Drain Current (IDM): 114 A

High pulsed drain current capability enables the transistor to handle sudden spikes in current without damage, making it suitable for demanding switching applications.

Maximum Drain Current (Abs) (ID): 38 A

High continuous drain current rating allows for reliable operation under normal load conditions, making it suitable for various power switching applications.

Maximum Power Dissipation (Abs): 118 W

High power dissipation capability ensures the transistor can handle high power levels without overheating, contributing to overall reliability and performance.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows the transistor to operate in various environmental conditions, making it versatile and suitable for different applications.

Technical Specifications

Power Field Effect Transistors (FET) NXH40B120MNQ0SNG attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain Current (Abs) (ID):

38 A

Maximum Drain Current (ID):

38 A

Maximum Drain-Source On Resistance:

.055 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

19 pF

JESD-30 Code:

R-XUFM-P22

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

22

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

114 A

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

PIN/PEG

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON CARBIDE

Trade Compliance

NXH40B120MNQ0SNG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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