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FDU5N60NZTU

Onsemi

FDU5N60NZTU by Onsemi

FDU5N60NZTU by Onsemi is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 16A IDM and 216mJ EAS. With a max power dissipation of 83W, this transistor operates in ENHANCEMENT MODE and has a -55 to 150 °C temperature range.

Median Price

$3.640

Lifecycle Status

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3

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 5,010 parts In-Stock

1+ parts

$3.640

100+ parts

$1.530

1k+ parts

$1.050

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5,010

$3.640

$1.530

$1.050

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Digiode

USA . 1,008 parts In-Stock

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$3.458

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$3.458

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Vyrian

USA . 7,223 parts In-Stock

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Corphita

USA . 2,476 parts In-Stock

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$3.276

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Corohmni

South Africa . 400 parts In-Stock

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Native Components

USA . 832 parts In-Stock

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$5.110

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832

$5.110

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AZTECH Wire

Italy . 369 parts In-Stock

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$9.830

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369

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Perfect Parts

USA . 33,667 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,956 parts In-Stock

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SupplyDigital Components

Austria . 6,911 parts In-Stock

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Kulean Microsystems

USA . 6,575 parts In-Stock

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Problanco Electronics

Mexico . 6,397 parts In-Stock

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TANS Electronics

Latvia . 5,559 parts In-Stock

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GreenTree Electronics

Israel . 5,010 parts In-Stock

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Northwest PG Solutions

USA . 2,031 parts In-Stock

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$5.008

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UHIMA Technologies

Türkiye . 368 parts In-Stock

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Overview

Enhance your power switching applications with the FDU5N60NZTU by Onsemi. Manufactured with top-quality materials and advanced technology, this N-channel Power FET offers reliable performance and efficiency. With a high DS Breakdown Voltage of 600V and a maximum Drain Current of 4A, this transistor is perfect for various switching tasks. Its built-in diode adds convenience, while its compact design makes it easy to integrate into your systems. Trust Onsemi for superior quality and trust the FDU5N60NZTU for unmatched value and benefits in your projects.

Feature Benefit Bullets

Minimum DS Breakdown Voltage: 600 V

This high breakdown voltage ensures reliable performance and protection against overloads.

Maximum Pulsed Drain Current (IDM): 16 A

Ability to handle high current pulses makes it suitable for applications where temporary high power is required.

Maximum Power Dissipation (Abs): 83 W

Allows for efficient operation and handling of power dissipation, contributing to overall performance and reliability.

Maximum Operating Temperature: 150 °C

The high operating temperature range ensures stable performance even in harsh environments.

Maximum Turn On Time (ton): 90 ns

Fast turn-on time helps in quick switching applications, improving efficiency and response time.

Technical Specifications

Power Field Effect Transistors (FET) FDU5N60NZTU attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

216 mJ

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

2 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

7.5 pF

JEDEC-95 Code:

TO-251AA

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

16 A

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

130 ns

Maximum Turn On Time (ton):

90 ns

Trade Compliance

FDU5N60NZTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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