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FDU5N53TU

Onsemi

FDU5N53TU by Onsemi

FDU5N53TU by Onsemi is a N-CHANNEL Power FET with 530V DS Breakdown Voltage, ideal for SWITCHING applications. It features 16A IDM, 256mJ EAS, and 1.5 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 40W and can withstand temperatures from -55 to 150 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

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Digiode

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Native Components

USA . 555 parts In-Stock

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Northwest PG Solutions

USA . 1,278 parts In-Stock

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Kulean Microsystems

USA . 6,561 parts In-Stock

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Problanco Electronics

Mexico . 5,399 parts In-Stock

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SupplyDigital Components

Austria . 1,824 parts In-Stock

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Supply Digital

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Corphita

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TANS Electronics

Latvia . 916 parts In-Stock

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Corohmni

South Africa . 463 parts In-Stock

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UHIMA Technologies

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Overview

Experience the power of innovation with the FDU5N53TU by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Field Effect Transistors (FET) that promise reliability and efficiency. The FDU5N53TU is perfect for switching applications, offering a high breakdown voltage of 530V and a maximum drain current of 4A. With its single configuration and built-in diode, this transistor provides seamless operation and enhanced performance. Trust Onsemi to bring you cutting-edge technology that delivers exceptional value and benefits, making the FDU5N53TU the ideal choice for your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

Offers efficient power handling capabilities and high switching speeds, making it suitable for various applications.

Minimum DS Breakdown Voltage: 530 V

Can handle high voltage applications without breakdown, ensuring safety and stability in operation.

Maximum Drain Current (Abs) (ID): 4 A

Capable of handling high current loads, making it suitable for power switching applications.

Maximum Power Dissipation (Abs): 40 W

Can dissipate heat effectively even under high power conditions, ensuring stable performance.

Maximum Operating Temperature: 150 °C

Capable of operating in high temperature environments without any performance degradation.

Maximum Drain-Source On Resistance: 1.5 ohm

Low on-resistance results in reduced power losses and improved efficiency in switching applications.

Technical Specifications

Power Field Effect Transistors (FET) FDU5N53TU attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

256 mJ

Minimum DS Breakdown Voltage:

530 V

Maximum Drain Current (Abs) (ID):

4 A

Maximum Drain Current (ID):

4 A

Maximum Drain-Source On Resistance:

1.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

8 pF

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

16 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

116 ns

Maximum Turn On Time (ton):

90 ns

Trade Compliance

FDU5N53TU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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