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SVD14N03RT4G

Onsemi

SVD14N03RT4G by Onsemi

SVD14N03RT4G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 28A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 20.8W and operates in the temperature range of -55 to 150 °C.

Median Price

$0.310

Lifecycle Status

EOL

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 200,000 parts In-Stock

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$0.310

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$0.300

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$0.300

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$0.310

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Flip Electronics (Authorized)

USA . 172,500 parts In-Stock

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172,500

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Digiode

USA . 788 parts In-Stock

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$0.294

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788

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Flip Electronics

USA . 172,500 parts In-Stock

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172,500

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Vyrian

USA . 7,348 parts In-Stock

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Corphita

USA . 1,083 parts In-Stock

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$0.279

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Corohmni

South Africa . 114 parts In-Stock

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$0.310

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114

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AZTECH Wire

Italy . 885 parts In-Stock

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$9.280

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885

$9.280

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 8,046 parts In-Stock

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SupplyDigital Components

Austria . 4,734 parts In-Stock

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Problanco Electronics

Mexico . 4,025 parts In-Stock

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Kulean Microsystems

USA . 2,846 parts In-Stock

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UHIMA Technologies

Türkiye . 935 parts In-Stock

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Overview

Enhance your power management capabilities with the SVD14N03RT4G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power FETs like this N-CHANNEL transistor with a built-in diode, perfect for switching applications. This surface mount transistor offers a maximum drain current of 14 A and a low on-resistance of 0.13 ohm, ensuring efficient performance. Whether you're designing electronic circuits for automotive, industrial, or consumer electronics, this enhancement mode transistor provides reliable operation and high power dissipation. Trust Onsemi to provide the solutions you need for your power management challenges.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside the package.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are commonly used in power applications due to their lower ON resistance and higher mobility.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection in switching applications.

Transistor Application: SWITCHING

Designed for efficient switching operations, making it suitable for power control applications.

Surface Mount: YES

Can be easily mounted on a PCB for compact and efficient assembly.

Maximum Operating Temperature: 150 °C

Can operate in high temperature environments without degradation in performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers high efficiency and fast switching speeds for power applications.

Maximum Drain-Source On Resistance: 0.13 ohm

Low ON resistance allows for efficient power transfer and reduced heat generation.

Technical Specifications

Power Field Effect Transistors (FET) SVD14N03RT4G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

FAST SWITCHING

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

25 V

Maximum Drain Current (Abs) (ID):

14 A

Maximum Drain Current (ID):

11.4 A

Maximum Drain-Source On Resistance:

.13 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

28 A

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SVD14N03RT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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