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FQP50N06L-EPKE0003

Onsemi

FQP50N06L-EPKE0003 by Onsemi

FQP50N06L-EPKE0003 by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage. It has 210A IDM and 990mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.025 ohm RDS(on) and can handle up to 121W power dissipation.

Median Price

$2.059

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 60 parts In-Stock

1+ parts

$2.059

100+ parts

$1.956

1k+ parts

$1.956

10k+ parts

-

60

$2.059

$1.956

$1.956

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 65 parts In-Stock

1+ parts

$0.500

100+ parts

-

1k+ parts

-

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65

$0.500

-

-

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Digiode

USA . 1,224 parts In-Stock

1+ parts

$1.956

100+ parts

-

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1,224

$1.956

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Vyrian

USA . 3,989 parts In-Stock

1+ parts

-

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3,989

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 414 parts In-Stock

1+ parts

$0.490

100+ parts

-

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-

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414

$0.490

-

-

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Continental Prestige Electronics

USA . 6,908 parts In-Stock

1+ parts

$0.500

100+ parts

-

1k+ parts

-

10k+ parts

$0.490

6,908

$0.500

-

-

$0.490

Argo Parts USA

USA . 4,509 parts In-Stock

1+ parts

$0.500

100+ parts

-

1k+ parts

-

10k+ parts

$0.485

4,509

$0.500

-

-

$0.485

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.500

100+ parts

-

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10k+ parts

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500

$0.500

-

-

-

Aztec Data Supply Inc.

USA . 333 parts In-Stock

1+ parts

$0.515

100+ parts

-

1k+ parts

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333

$0.515

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-

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Ampacity Inc.

Singapore . 60 parts In-Stock

1+ parts

$1.750

100+ parts

-

1k+ parts

-

10k+ parts

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60

$1.750

-

-

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Semicontronic

India . 60 parts In-Stock

1+ parts

$1.750

100+ parts

$1.706

1k+ parts

$1.698

10k+ parts

-

60

$1.750

$1.706

$1.698

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Corphita

USA . 2,413 parts In-Stock

1+ parts

$1.853

100+ parts

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10k+ parts

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2,413

$1.853

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Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$2.059

100+ parts

$1.956

1k+ parts

$1.956

10k+ parts

-

60

$2.059

$1.956

$1.956

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AZTECH Wire

Italy . 450 parts In-Stock

1+ parts

$12.171

100+ parts

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450

$12.171

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GreenTree Electronics

Israel . 589,000 parts In-Stock

1+ parts

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589,000

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TANS Electronics

Latvia . 7,491 parts In-Stock

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7,491

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SupplyDigital Components

Austria . 5,697 parts In-Stock

1+ parts

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5,697

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Problanco Electronics

Mexico . 5,514 parts In-Stock

1+ parts

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5,514

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Kulean Microsystems

USA . 1,964 parts In-Stock

1+ parts

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100+ parts

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1,964

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UHIMA Technologies

Türkiye . 990 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

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990

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Overview

Unleash the power of innovation with the FQP50N06L-EPKE0003 by Onsemi, a top-tier manufacturer known for its superior quality and cutting-edge technology. As a leading player in the Power Field Effect Transistors (FET) category, this product offers unmatched performance in switching applications. With a single configuration and built-in diode, it provides exceptional value and efficiency to customers. Experience the benefits of enhanced mode operation, high durability, and reliable functionality at an affordable price point. Elevate your projects with the FQP50N06L-EPKE0003 and witness the difference that quality engineering can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the FET, ensuring a longer lifespan.

Minimum DS Breakdown Voltage: 60 V

Suitable for applications requiring higher voltages, providing a reliable performance.

Maximum Pulsed Drain Current (IDM): 210 A

Capable of handling high currents, making it suitable for demanding switching applications.

Maximum Power Dissipation (Abs): 121 W

Efficiently dissipates heat to prevent overheating and ensure stable operation.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, allowing for use in a variety of environments.

Technical Specifications

Power Field Effect Transistors (FET) FQP50N06L-EPKE0003 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

990 mJ

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

52.4 A

Maximum Drain-Source On Resistance:

.025 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

120 pF

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

210 A

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

470 ns

Maximum Turn On Time (ton):

820 ns

Trade Compliance

FQP50N06L-EPKE0003 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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