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BMS4007-1E

Onsemi

BMS4007-1E by Onsemi

BMS4007-1E by Onsemi is a N-CHANNEL FET with 60A ID and 30W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power management systems. Operating in enhancement mode, it offers reliable performance up to 150 °C with a single configuration design.

Median Price

$1.375

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 60 parts In-Stock

1+ parts

$3.320

100+ parts

$1.664

1k+ parts

-

10k+ parts

-

60

$3.320

$1.664

-

-

Rochester

USA . 1,097 parts In-Stock

1+ parts

-

100+ parts

$1.320

1k+ parts

$1.100

10k+ parts

$0.977

1,097

-

$1.320

$1.100

$0.977

Verical

USA . 747 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.375

10k+ parts

$1.221

747

-

-

$1.375

$1.221

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 634 parts In-Stock

1+ parts

$1.112

100+ parts

-

1k+ parts

-

10k+ parts

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634

$1.112

-

-

-

Chip Stock

USA . 73,000 parts In-Stock

1+ parts

-

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73,000

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Vyrian

USA . 9,452 parts In-Stock

1+ parts

-

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-

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9,452

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-

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 624 parts In-Stock

1+ parts

$0.990

100+ parts

-

1k+ parts

-

10k+ parts

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624

$0.990

-

-

-

Corphita

USA . 215 parts In-Stock

1+ parts

$1.053

100+ parts

-

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215

$1.053

-

-

-

Corohmni

South Africa . 151 parts In-Stock

1+ parts

$1.170

100+ parts

-

1k+ parts

-

10k+ parts

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151

$1.170

-

-

-

Northwest PG Solutions

USA . 988 parts In-Stock

1+ parts

$3.531

100+ parts

-

1k+ parts

-

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988

$3.531

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 25,481 parts In-Stock

1+ parts

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25,481

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Problanco Electronics

Mexico . 7,282 parts In-Stock

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7,282

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Microchip USA

USA . 6,854 parts In-Stock

1+ parts

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6,854

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Kulean Microsystems

USA . 5,067 parts In-Stock

1+ parts

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5,067

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-

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TANS Electronics

Latvia . 4,428 parts In-Stock

1+ parts

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4,428

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SupplyDigital Components

Austria . 3,582 parts In-Stock

1+ parts

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100+ parts

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3,582

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,500

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Continental Prestige Electronics

USA . 1,097 parts In-Stock

1+ parts

-

100+ parts

$1.430

1k+ parts

-

10k+ parts

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1,097

-

$1.430

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Kepictronics

USA . 1,097 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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1,097

-

-

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UHIMA Technologies

Türkiye . 907 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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907

-

-

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Native Components

USA . 807 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.114

10k+ parts

-

807

-

-

$3.114

-

Overview

Unleash the power of innovation with the BMS4007-1E by Onsemi. Crafted with precision and excellence, this Power Field Effect Transistor (FET) offers unparalleled quality and reliability. Ideal for a variety of applications, this N-CHANNEL transistor provides high performance in a single configuration. Experience the enhanced mode operation and unleash a maximum drain current of 60A with ease. With a maximum power dissipation of 30W and a maximum operating temperature of 150 °C, the possibilities with this METAL-OXIDE SEMICONDUCTOR technology are endless. Elevate your projects to new heights with the BMS4007-1E and discover the true value it brings to your work.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs generally have lower on-resistance and higher current carrying capability compared to P-CHANNEL FETs, making this product suitable for high-power applications.

Configuration: SINGLE

Single configuration FETs are simpler to use and suitable for basic applications, making this product easy to integrate into circuits.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are normally off devices, providing better control and efficiency in power management applications.

Maximum Drain Current (ID): 60 A

With a high maximum drain current rating of 60A, this FET can handle high current loads effectively, making it suitable for power applications.

Maximum Power Dissipation: 30 W

The high maximum power dissipation of 30W ensures that this FET can handle power efficiently without overheating, making it reliable in demanding conditions.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor FETs offer good switching characteristics and low leakage currents, making this product suitable for applications requiring precise control.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this FET can withstand elevated temperatures without performance degradation, ensuring reliability in harsh environments.

Terminal Finish: Tin (Sn)

Tin terminal finish provides good solderability and conductivity, making this FET easy to integrate into circuits and ensuring reliable connections.

Technical Specifications

Power Field Effect Transistors (FET) BMS4007-1E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

60 A

Maximum Drain Current (ID):

60 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Trade Compliance

BMS4007-1E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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