Loading...

BMS4007

Onsemi

BMS4007 by Onsemi

BMS4007 by Onsemi is a N-CHANNEL Power FET with 60A max drain current and 30W max power dissipation. It operates in enhancement mode with a max temperature of 150 °C. Ideal for high-power applications requiring efficient switching capabilities.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,482 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,482

-

-

-

-

Digiode

USA . 561 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

561

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 357 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

357

$99.990

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,986

-

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 12,243 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

12,243

-

-

-

-

Kulean Microsystems

USA . 8,367 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,367

-

-

-

-

TANS Electronics

Latvia . 7,995 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,995

-

-

-

-

SupplyDigital Components

Austria . 7,402 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,402

-

-

-

-

Problanco Electronics

Mexico . 5,246 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,246

-

-

-

-

Glotronic Ltd.

UK . 3,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,700

-

-

-

-

Corphita

USA . 2,440 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,440

-

-

-

-

Northwest PG Solutions

USA . 1,118 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,118

-

-

-

-

UHIMA Technologies

Türkiye . 589 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

589

-

-

-

-

Corohmni

South Africa . 397 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

397

-

-

-

-

Native Components

USA . 1 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1

-

-

-

-

Overview

Experience the power of innovation with the BMS4007 by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their products. The BMS4007 falls under the Power Field Effect Transistors (FET) category, offering N-CHANNEL polarity and SINGLE configuration for enhanced performance. With a maximum drain current of 60A and a power dissipation of 30W, this transistor is designed to meet your power requirements efficiently. Whether you're in the automotive, industrial, or consumer electronics sector, the BMS4007 provides the value, benefits, and advantages you need to take your projects to the next level.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs generally have lower ON resistance compared to P-CHANNEL FETs, making this product efficient in power applications.

Configuration: SINGLE

Single configuration FETs are straightforward to use and ideal for simple circuits, making this product user-friendly.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs can be easily turned ON and OFF, providing better control in various applications.

Maximum Drain Current (ID): 60 A

High maximum drain current allows for handling large loads, making this product suitable for high-power applications.

Maximum Power Dissipation: 30 W

With a maximum power dissipation of 30W, this FET can handle moderate power levels without overheating, ensuring reliable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good reliability and efficiency, contributing to the overall performance of this FET.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance makes this product robust and capable of functioning in demanding environments.

Technical Specifications

Power Field Effect Transistors (FET) BMS4007 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

60 A

Maximum Drain Current (ID):

60 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Trade Compliance

BMS4007 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 4