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NTBV5605T4G

Onsemi

NTBV5605T4G by Onsemi

The Onsemi NTBV5605T4G is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 55A IDM and 0.14 ohm RDS(ON), suitable for high-power operations. With a max power dissipation of 88W and operating temperature of 175 °C, it offers reliable performance in various electronic systems.

Median Price

$1.740

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 1 parts In-Stock

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$1.740

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Digiode

USA . 409 parts In-Stock

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$1.653

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Vyrian

USA . 4,088 parts In-Stock

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Corphita

USA . 1,478 parts In-Stock

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$1.566

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Corohmni

South Africa . 298 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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TANS Electronics

Latvia . 5,493 parts In-Stock

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Problanco Electronics

Mexico . 2,942 parts In-Stock

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Perfect Parts

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Kulean Microsystems

USA . 871 parts In-Stock

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UHIMA Technologies

Türkiye . 789 parts In-Stock

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SupplyDigital Components

Austria . 510 parts In-Stock

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Overview

Enhance your power management solutions with the NTBV5605T4G by Onsemi. As a leading manufacturer in the industry of Power Field Effect Transistors (FET), Onsemi guarantees quality and reliability in every product. This P-Channel FET with a built-in diode is perfect for switching applications, offering customers enhanced performance and efficiency. With a minimum DS breakdown voltage of 60V and maximum pulsing drain current of 55A, this transistor ensures optimal power dissipation and temperature management. Upgrade your systems today with the NTBV5605T4G for improved functionality and overall performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel FETs are preferred, offering flexibility in circuit design.

Configuration: SINGLE WITH BUILT-IN DIODE

Convenient built-in diode simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Maximum Operating Temperature: 175 °C

Can operate efficiently at high temperatures without compromising performance, suitable for demanding environments.

Maximum Drain-Source On Resistance: 0.14 ohm

Low on-resistance reduces power loss and improves overall efficiency of the product.

Technical Specifications

Power Field Effect Transistors (FET) NTBV5605T4G attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Avalanche Energy Rating (EAS):

338 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

18.5 A

Maximum Drain Current (ID):

18.5 A

Maximum Drain-Source On Resistance:

.14 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

55 A

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NTBV5605T4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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