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2SK4099LS-1E

Onsemi

2SK4099LS-1E by Onsemi

The Onsemi 2SK4099LS-1E is an N-channel Power FET with a max drain current of 8.5A and power dissipation of 35W. It operates in enhancement mode, suitable for applications requiring high power handling such as power supplies or motor control systems at up to 150°C.

Median Price

$1.288

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,250 parts In-Stock

1+ parts

-

100+ parts

$1.240

1k+ parts

$1.030

10k+ parts

$0.918

1,250

-

$1.240

$1.030

$0.918

DigiKey

USA . 1,250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.550

10k+ parts

-

1,250

-

-

$1.550

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Verical

USA . 1,200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.288

10k+ parts

$1.147

1,200

-

-

$1.288

$1.147

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,251 parts In-Stock

1+ parts

$0.969

100+ parts

-

1k+ parts

-

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2,251

$0.969

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-

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Chip Stock

USA . 76,000 parts In-Stock

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76,000

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Vyrian

USA . 6,713 parts In-Stock

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6,713

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DigiKey Marketplace

USA . 1,250 parts In-Stock

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1,250

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,188 parts In-Stock

1+ parts

$0.918

100+ parts

-

1k+ parts

-

10k+ parts

-

1,188

$0.918

-

-

-

Corohmni

South Africa . 186 parts In-Stock

1+ parts

$1.020

100+ parts

-

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-

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186

$1.020

-

-

-

Component Stockers USA

USA . 1,577 parts In-Stock

1+ parts

$1.050

100+ parts

$0.990

1k+ parts

$0.900

10k+ parts

-

1,577

$1.050

$0.990

$0.900

-

Native Components

USA . 402 parts In-Stock

1+ parts

$1.460

100+ parts

-

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402

$1.460

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Northwest PG Solutions

USA . 1,447 parts In-Stock

1+ parts

$1.606

100+ parts

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1,447

$1.606

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AZTECH Wire

Italy . 420 parts In-Stock

1+ parts

$15.500

100+ parts

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420

$15.500

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 21,080 parts In-Stock

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Microchip USA

USA . 10,010 parts In-Stock

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10,010

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TANS Electronics

Latvia . 7,250 parts In-Stock

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7,250

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Kulean Microsystems

USA . 4,823 parts In-Stock

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4,823

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SupplyDigital Components

Austria . 4,128 parts In-Stock

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4,128

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Problanco Electronics

Mexico . 3,052 parts In-Stock

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3,052

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Continental Prestige Electronics

USA . 1,250 parts In-Stock

1+ parts

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100+ parts

$0.934

1k+ parts

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10k+ parts

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1,250

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$0.934

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UHIMA Technologies

Türkiye . 607 parts In-Stock

1+ parts

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607

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Overview

Unlock the power of high-quality performance with the 2SK4099LS-1E by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch Power Field Effect Transistors (FET) that are reliable and efficient. Ideal for a variety of applications, this N-CHANNEL FET offers enhanced performance and durability. Experience the benefits of its maximum drain current and power dissipation, ensuring optimal functionality. Trust Onsemi to provide cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Polarity or Channel Type

N-channel FETs typically have higher electron mobility and faster switching speeds, making them suitable for high-performance applications.

Configuration

Single configuration FETs are easier to interface with other electronic components and simpler to control in circuit design.

Operating Mode

Enhancement mode FETs offer low ON resistance and high input impedance, making them energy efficient and suitable for various applications.

Maximum Drain Current (Abs) (ID)

High maximum drain current capability allows the FET to handle large current loads without overheating, providing reliability in high-power applications.

Maximum Power Dissipation (Abs)

With a high maximum power dissipation rating, this FET can dissipate heat effectively, ensuring stable operation under demanding conditions.

Field Effect Transistor Technology

Metal-oxide semiconductor FETs offer good performance characteristics, including low leakage current and high transconductance, making them suitable for power applications.

Maximum Operating Temperature

The high maximum operating temperature allows the FET to operate reliably in various environments without the risk of overheating, ensuring long-term performance.

Terminal Finish

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable electrical connections and longevity in circuit applications.

Technical Specifications

Power Field Effect Transistors (FET) 2SK4099LS-1E attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

8.5 A

Maximum Drain Current (ID):

8.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e3

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

TIN

Trade Compliance

2SK4099LS-1E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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