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2SK4087LS

Onsemi

2SK4087LS by Onsemi

The Onsemi 2SK4087LS is a N-CHANNEL Power FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 52A and EAS of 117mJ, making it suitable for high-power operations. The transistor has a 0.61 ohm Drain-Source On Resistance and comes in a RECTANGULAR package with THROUGH-HOLE terminals.

Median Price

$3.913

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 10,471 parts In-Stock

1+ parts

-

100+ parts

$3.130

1k+ parts

$2.800

10k+ parts

$2.630

10,471

-

$3.130

$2.800

$2.630

DigiKey

USA . 10,471 parts In-Stock

1+ parts

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$4.110

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10,471

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$4.110

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Verical

USA . 10,471 parts In-Stock

1+ parts

-

100+ parts

$3.913

1k+ parts

$3.500

10k+ parts

$3.288

10,471

-

$3.913

$3.500

$3.288

Distributors (In-Stock)

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Digiode

USA . 700 parts In-Stock

1+ parts

$3.296

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700

$3.296

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Vyrian

USA . 1,044 parts In-Stock

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$3.470

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1,044

$3.470

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Chip Stock

USA . 18,000 parts In-Stock

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18,000

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Prism Electronics

USA . 100 parts In-Stock

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100

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Distributors (Availability)

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Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.404

100+ parts

$0.368

1k+ parts

$0.331

10k+ parts

-

150

$0.404

$0.368

$0.331

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Corphita

USA . 1,364 parts In-Stock

1+ parts

$3.123

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1,364

$3.123

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Corohmni

South Africa . 419 parts In-Stock

1+ parts

$3.470

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419

$3.470

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Component Stockers USA

USA . 7,788 parts In-Stock

1+ parts

$3.520

100+ parts

$3.310

1k+ parts

$2.990

10k+ parts

$2.990

7,788

$3.520

$3.310

$2.990

$2.990

Microchip USA

USA . 230 parts In-Stock

1+ parts

$21.645

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230

$21.645

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,217 parts In-Stock

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Continental Prestige Electronics

USA . 10,471 parts In-Stock

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$3.180

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$3.180

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Kulean Microsystems

USA . 7,026 parts In-Stock

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7,026

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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TANS Electronics

Latvia . 2,924 parts In-Stock

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2,924

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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SupplyDigital Components

Austria . 1,554 parts In-Stock

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Kepictronics

USA . 985 parts In-Stock

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985

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Problanco Electronics

Mexico . 933 parts In-Stock

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Northwest PG Solutions

USA . 862 parts In-Stock

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862

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Native Components

USA . 850 parts In-Stock

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850

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UHIMA Technologies

Türkiye . 454 parts In-Stock

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454

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Perfect Parts

USA . 112 parts In-Stock

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Overview

Discover the power of the 2SK4087LS by Onsemi, a top-quality N-CHANNEL Power Field Effect Transistor designed for SWITCHING applications. With a robust construction and a maximum DS Breakdown Voltage of 600V, this transistor offers reliable performance and durability. The SINGLE configuration with BUILT-IN DIODE ensures ease of use, while the ENHANCEMENT MODE operation provides efficiency in power management. Whether you're looking to optimize your electronic devices or enhance their functionality, the 2SK4087LS delivers superior results and exceptional value. Elevate your projects with this cutting-edge technology from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally offer better performance characteristics compared to P-channel transistors, making this product suitable for high-end applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and provides protection against reverse voltage conditions, making it a convenient choice for switch applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high efficiency and fast switching speeds.

Minimum DS Breakdown Voltage: 600 V

The high breakdown voltage of 600V allows this transistor to handle high voltage applications with ease, ensuring reliable performance.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into various electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer better control and performance compared to depletion mode transistors, making this product a reliable choice for various applications.

Maximum Pulsed Drain Current (IDM): 52 A

The high maximum pulsed drain current rating of 52A indicates the transistor's ability to handle high current spikes, suitable for demanding applications.

Avalanche Energy Rating (EAS): 117 mJ

The high avalanche energy rating of 117mJ ensures the transistor can withstand short energy pulses, making it reliable in harsh operating conditions.

No. of Terminals: 3

With 3 terminals, this transistor is easy to install and integrate into circuits, providing flexibility in design.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers easy mounting and heat dissipation, ensuring optimal performance in various applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high efficiency and reliability in transistor operation, making this product suitable for critical applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, making this product a durable and efficient choice for various applications.

Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

The use of multiple terminal finish materials ensures high conductivity and corrosion resistance, making this transistor ideal for long-term use.

Maximum Drain Current (ID): 14 A

The high maximum drain current rating of 14A indicates the transistor's ability to handle continuous current flow, suitable for demanding applications.

Maximum Drain-Source On Resistance: 0.61 ohm

The low drain-source on resistance of 0.61 ohm results in minimal power loss and high efficiency, making this transistor a cost-effective choice for various applications.

Terminal Position: SINGLE

With a single terminal position, this transistor is easy to install and connect in circuits, ensuring simple and quick integration.

Case Connection: ISOLATED

The isolated case connection provides protection against electrical interference and ensures safe operation in sensitive applications.

Technical Specifications

Power Field Effect Transistors (FET) 2SK4087LS attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Avalanche Energy Rating (EAS):

117 mJ

Case Connection:

ISOLATED

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

14 A

Maximum Drain-Source On Resistance:

.61 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

52 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2SK4087LS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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