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SFT1443-TL-W

Onsemi

SFT1443-TL-W by Onsemi

The Onsemi SFT1443-TL-W is a N-CHANNEL FET with 9A max drain current and 19W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems.

Median Price

$0.392

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 700 parts In-Stock

1+ parts

-

100+ parts

$0.392

1k+ parts

$0.326

10k+ parts

$0.290

700

-

$0.392

$0.326

$0.290

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,092 parts In-Stock

1+ parts

$0.320

100+ parts

-

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-

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2,092

$0.320

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Chip Stock

USA . 33,000 parts In-Stock

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33,000

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Vyrian

USA . 3,913 parts In-Stock

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3,913

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Flip Electronics

USA . 1,400 parts In-Stock

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1,400

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,959 parts In-Stock

1+ parts

$0.303

100+ parts

-

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1,959

$0.303

-

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Corohmni

South Africa . 424 parts In-Stock

1+ parts

$0.337

100+ parts

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424

$0.337

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Component Stockers USA

USA . 1,310 parts In-Stock

1+ parts

$0.350

100+ parts

$0.330

1k+ parts

$0.290

10k+ parts

-

1,310

$0.350

$0.330

$0.290

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AZTECH Wire

Italy . 681 parts In-Stock

1+ parts

$17.900

100+ parts

-

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681

$17.900

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Kulean Microsystems

USA . 6,998 parts In-Stock

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6,998

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Perfect Parts

USA . 4,704 parts In-Stock

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4,704

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TANS Electronics

Latvia . 4,161 parts In-Stock

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4,161

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Problanco Electronics

Mexico . 4,075 parts In-Stock

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4,075

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SupplyDigital Components

Austria . 3,693 parts In-Stock

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3,693

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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2,000

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Kepictronics

USA . 1,400 parts In-Stock

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1,400

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UHIMA Technologies

Türkiye . 430 parts In-Stock

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430

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Overview

Unlock the power of innovation with the Onsemi SFT1443-TL-W Power Field Effect Transistor. Designed with cutting-edge technology and precision engineering, this N-CHANNEL FET offers exceptional performance in a compact, surface mount configuration. From enhancing motor control to optimizing power management systems, this transistor delivers reliability and efficiency at every turn. Trust in Onsemi's reputation for quality and experience the value of seamless operation and enhanced productivity with the SFT1443-TL-W. Elevate your projects and exceed expectations with this exceptional component.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are known for their high input impedance and low output impedance, making them efficient for switching applications.

Configuration: SINGLE

Single configuration FETs are easier to control and manage compared to multiple configurations, simplifying circuit design and operation.

Surface Mount: YES

Surface mount technology reduces the size and weight of the component, making it ideal for miniaturized electronic devices.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs have high input impedance and can be easily turned on and off, providing efficient control over power flow.

Maximum Drain Current (Abs) (ID): 9 A

With a maximum drain current of 9 A, this FET can handle high power applications and currents without overheating or malfunctioning.

Maximum Power Dissipation (Abs): 19 W

The high power dissipation capability of 19 W ensures that the FET can handle significant power loads while maintaining stability and reliability.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency, low power consumption, and improved performance compared to other FET technologies.

Maximum Operating Temperature: 150 °C

The FET can operate efficiently at temperatures up to 150 °C, making it suitable for high temperature environments and applications.

Terminal Finish: TIN BISMUTH

Tin Bismuth terminal finish provides good solderability and ensures a reliable connection between the FET and the circuit board.

Maximum Time At Peak Reflow Temperature (s): 30

The FET can withstand peak reflow temperatures for up to 30 seconds, allowing for easy and reliable assembly onto circuit boards during manufacturing.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, the FET can be soldered onto circuit boards using standard reflow soldering processes without risk of damage.

Technical Specifications

Power Field Effect Transistors (FET) SFT1443-TL-W attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

9 A

Maximum Drain Current (ID):

9 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SFT1443-TL-W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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