Loading...

SFT1427(TP)

Onsemi

SFT1427(TP) by Onsemi

SFT1427(TP) by Onsemi is a N-CHANNEL Power FET with 7A max drain current and 15W max power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies and motor control systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,454 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,454

-

-

-

-

Digiode

USA . 1,106 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,106

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 7,506 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,506

-

-

-

-

TANS Electronics

Latvia . 6,291 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,291

-

-

-

-

Problanco Electronics

Mexico . 4,337 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,337

-

-

-

-

Kulean Microsystems

USA . 1,959 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,959

-

-

-

-

Corphita

USA . 1,264 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,264

-

-

-

-

UHIMA Technologies

Türkiye . 741 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

741

-

-

-

-

Corohmni

South Africa . 315 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

315

-

-

-

-

Overview

Unlock the power of efficiency with the SFT1427(TP) by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Field Effect Transistors that are perfect for a wide range of applications. Whether you're looking to enhance your electronics projects or optimize your power management systems, this N-CHANNEL FET offers unparalleled performance and reliability. With a maximum drain current of 7A and a maximum power dissipation of 15W, this Enhancement Mode transistor is designed to meet your needs. Trust Onsemi to provide innovative solutions that drive success in your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs are known for their high conductivity and low ON-resistance, making them efficient for power applications.

Configuration: SINGLE

SINGLE configuration simplifies the circuit design and ensures easy integration into systems.

Operating Mode: ENHANCEMENT MODE

ENHANCEMENT MODE FETs provide better control over the current flow, enhancing the efficiency of the power system.

Maximum Drain Current (ID): 7 A

With a high maximum drain current rating of 7 A, this FET can handle heavy loads and high power applications effectively.

Maximum Power Dissipation (P): 15 W

The high maximum power dissipation of 15 W allows the FET to operate at higher power levels without risk of damage.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR technology ensures high performance and reliability in power switching applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can withstand high temperatures and operate reliably in tough conditions.

Technical Specifications

Power Field Effect Transistors (FET) SFT1427(TP) attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Trade Compliance

SFT1427(TP) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20