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SFT1431(TP-FA)

Onsemi

SFT1431(TP-FA) by Onsemi

Onsemi's SFT1431(TP-FA) is a N-CHANNEL FET with 11A ID and 15W power dissipation. Ideal for applications requiring high drain current, it operates in enhancement mode at up to 150 °C. Suitable for surface mount configurations, this MOSFET offers reliable performance in various power electronics systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,805 parts In-Stock

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Digiode

USA . 508 parts In-Stock

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Problanco Electronics

Mexico . 7,210 parts In-Stock

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SupplyDigital Components

Austria . 6,185 parts In-Stock

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Corphita

USA . 2,077 parts In-Stock

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Kulean Microsystems

USA . 1,821 parts In-Stock

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TANS Electronics

Latvia . 1,734 parts In-Stock

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UHIMA Technologies

Türkiye . 356 parts In-Stock

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Corohmni

South Africa . 85 parts In-Stock

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Overview

Experience superior performance and reliability with the SFT1431(TP-FA) N-CHANNEL Power Field Effect Transistor by Onsemi. Designed with cutting-edge METAL-OXIDE SEMICONDUCTOR technology, this single configuration transistor offers a maximum drain current of 11A and a power dissipation of 15W, ensuring optimal efficiency in various applications. From power supplies to motor control, unlock limitless possibilities with this enhancement mode transistor that operates at a maximum temperature of 150 °C. Trust Onsemi's expertise in semiconductor manufacturing and elevate your projects with the unmatched value and benefits of the SFT1431(TP-FA).

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL FETs generally have lower ON-resistance and higher efficiency compared to P-CHANNEL FETs, making them a good choice for power applications.

Surface Mount: YES

Surface mount technology allows for easy and compact integration onto PCBs, saving space and simplifying the manufacturing process.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs are easier to control and have better performance characteristics, making them suitable for various applications.

Maximum Drain Current (Abs): 11 A

The high maximum drain current rating provides the capability to handle high current loads, making it suitable for power applications.

Maximum Power Dissipation (Abs): 15 W

With a high power dissipation rating, this FET can handle high power levels without overheating, ensuring reliable operation.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high efficiency, low ON-resistance, and fast switching speeds, making this FET suitable for power applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows this FET to operate reliably in high-temperature environments, increasing its versatility.

Maximum Drain Current (ID): 11 A

The high maximum drain current rating ensures that this FET can handle high current loads without any issues, making it suitable for power applications.

Technical Specifications

Power Field Effect Transistors (FET) SFT1431(TP-FA) attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

11 A

Maximum Drain Current (ID):

11 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

SFT1431(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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