Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SFT1423(TP) by Onsemi is a N-CHANNEL Power FET with 2A ID and 20W power dissipation. Ideal for applications requiring high drain current and low power consumption, such as power management systems in automotive electronics or industrial automation equipment.
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N-CHANNEL FETs generally have lower ON resistance and higher switching speeds compared to P-CHANNEL FETs, making them more efficient for many applications.
Single configuration FETs are simpler to use and control compared to dual configuration FETs, making them ideal for straightforward applications.
Enhancement mode FETs are easy to control and operate as they require a positive voltage at the gate to turn on, making them a good choice for various circuit designs.
With a maximum drain current of 2 A, this FET can handle relatively high current loads, making it suitable for applications requiring moderate power levels.
With a maximum power dissipation of 20 W, this FET can handle heat dissipation efficiently, allowing it to operate reliably under high-power conditions.
Metal-oxide semiconductor FETs offer good noise performance, low power consumption, and high input impedance, making them suitable for various electronic applications.
With a maximum operating temperature of 150 °C, this FET can withstand high-temperature environments, ensuring reliable performance in demanding conditions.
Power Field Effect Transistors (FET) SFT1423(TP) attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi
Configuration:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Field Effect Transistor Technology:
No. of Elements:
Operating Mode:
Maximum Operating Temperature:
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Sub-Category:
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SFT1423(TP) Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LM555CM
Harris Semiconductor
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
SMBJ18CA
KYOCERA AVX
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Sinyork
RECTIFIER DIODE; Surface Mount: YES; Maximum Forward Voltage (VF): 1 V; No. of Elements: 1; Maximum Output Current: .2 A; Config: SINGLE;
CRCW06031K00FKEAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.
DS18B20U+
Analog Devices
DS18B20U+ by Analog Devices is a 12-bit temperature sensor with 1-Wire interface. It operates b/w -55 to 125°C, offering ±0.5°C accuracy. Suitable for applications requiring digital output and surface mounting feature.
2N2222A
Dionics-usa
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N7002-7-F
SPC TECHNOLOGY/ MULTICOMP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
LM317T
Bay Linear
Other Regulators; No. of Terminals: 3; No. of Outputs: 1; Surface Mount: NO; Maximum Load Regulation (%): 1.5 %; Operating Temperature (TJ-Min): 0 Cel;
Ksl Microdevices
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BSS123NH6327XTSA1
Infineon Technologies
Infineon BSS123NH6327XTSA1 is a N-CHANNEL FET with 100V DS breakdown voltage, 0.19A ID, and 6 ohm RDS(on). Ideal for small outline applications requiring high drain current and low on-resistance. AEC-Q101 compliant for automotive use.
261
Micronetics
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
BAV99
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Tesla Elektronicke Soucastky
DS18B20+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Package Shape or Style: RECTANGULAR; Maximum Operating Current: 1.5 mA; Package Equivalence Code: SIP3,.1,50;
MMBT2222ALT1G
Onsemi
MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
Cobham Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; Maximum Turn Off Time (toff): 300 ns;
Secos
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; JEDEC-95 Code: TO-92;
Fairchild Semiconductor
Yageo
1N4148
Taiwan Semiconductor
RECTIFIER DIODE; Surface Mount: NO; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 175 Cel; JESD-609 Code: e3; No. of Elements: 1;
ZVN0545GTA
Zetex Plc
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; JESD-30 Code: R-PDSO-G4; Maximum Drain Current (ID): .14 A;
IRF7304TRPBF
International Rectifier
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Additional Features: LOGIC LEVEL COMPATIBLE; Moisture Sensitivity Level (MSL): 1;
IRFP460
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Qualification: Not Qualified; Maximum Turn Off Time (toff): 228 ns;
IRF640NSTRLPBF
Infineon's IRF640NSTRLPBF is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 72A IDM, 247mJ EAS, and 0.15 ohm RDS(ON). Operating from -55 to 175 °C, this MOSFET has a max power dissipation of 150W in a small outline package.
IRF7507TRPBF
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Pulsed Drain Current (IDM): 19 A; Package Style (Meter): SMALL OUTLINE;
MSC035SMA170B
Microsemi
Power Field-Effect Transistors;
IRF640STRLPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 18 A; Avalanche Energy Rating (EAS): 580 mJ; Terminal Position: SINGLE;
IRFS4410ZTRLPBF
IRFS4410ZTRLPBF by Infineon Technologies is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features 390A IDM, 242mJ EAS, and 0.009 ohm RDS(on). Ideal for SWITCHING applications, this ENHANCEMENT MODE transistor operates at up to 175°C and has a max power dissipation of 230W in a SMALL OUTLINE package.
SQJ469EP-T1_GE3
Vishay Intertechnology's SQJ469EP-T1_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 128A IDM, and 0.025 ohm RDS(ON). Ideal for power applications requiring high drain current capability in compact designs. Operating in enhancement mode, it offers efficient performance up to 175°C.
IRFR4620TRLPBF
IRFR4620TRLPBF by Infineon Technologies is a N-CHANNEL power FET with a min DS breakdown voltage of 200V. It is used for switching applications and has a max pulsed drain current of 100A.
IRF3205ZLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRF540ZLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 92 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
IRFP460LC
Vishay Intertechnology's IRFP460LC is a N-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 80A IDM, 960mJ EAS, and 0.27 ohm RDS(on). Operating from -55 to 150 °C, it has a max power dissipation of 280W in a RECTANGULAR package with THROUGH-HOLE terminals.
IRLML0100TRPBF-1
Infineon's IRLML0100TRPBF-1 is a N-channel Power FET with 100V DS breakdown voltage and 7A IDM. Ideal for enhancement mode operation, it features a built-in diode, 0.22 ohm RDS(on), and is suitable for surface mount applications in power electronics.
FDMS86101DC
FDMS86101DC by Onsemi is a N-CHANNEL FET with 100V DS breakdown voltage, 200A IDM, and 0.0075 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 125W.
IRFR120NTRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 48 W; Terminal Position: SINGLE; Maximum Time At Peak Reflow Temperature (s): 30;
NVTFS5116PLTAG
NVTFS5116PLTAG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 126A IDM, and 0.072ohm RDS(on). Ideal for power management applications in small outline packages. Operating at up to 175°C, it features a built-in diode and avalanche energy rating of 45mJ.
IRF6215STRLPBF
IRF6215STRLPBF by Infineon Technologies is a P-CHANNEL FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 44A and EAS of 310mJ, with an operating temperature up to 175°C. This SINGLE configuration transistor has 0.29 ohm RDS(on) and can handle a max ID of 13A.
BSS138BK,215
NXP Semiconductors
NXP Semiconductors' BSS138BK,215 is a N-CHANNEL FET with 0.36A max drain current and 0.42W power dissipation. Ideal for applications requiring single configuration and surface mount technology, such as enhancement mode operation in temperatures up to 150°C.
FDB52N20TM
FDB52N20TM by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 200V. It is an N-channel, single configuration transistor with a built-in diode, making it suitable for switching applications. With a max pulsed drain current of 208A and a max power dissipation of 357W, it offers high performance in a small outline package style.
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SFT1443-W
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 19 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SFT1431(TP)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 15 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
SFT1440(TP-FA)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Drain Current (Abs) (ID): 1.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SFT1431-W
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 15 W; JESD-609 Code: e6; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SFT1431-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 15 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
SFT1445(TP)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
SFT1403(TP-FA)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 14 A;
SFT1431(TP-FA)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Drain Current (ID): 11 A; Maximum Drain Current (Abs) (ID): 11 A;
SFT1423(TP-FA)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 2 A;
SFT1440(TP)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Drain Current (Abs) (ID): 1.5 A; Operating Mode: ENHANCEMENT MODE;
SFT1440-H
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
SFT1427(TP-FA)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
SFT1443-TL-W
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 19 W; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
SFT1405(TP-FA)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SFT1431-TL-W
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 15 W; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel;
SFT1403(TP)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
SFT1405(TP)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 15 W; Maximum Drain Current (ID): 10 A; Maximum Drain Current (Abs) (ID): 10 A;
SFT1427(TP)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 15 W; Maximum Drain Current (ID): 7 A; Maximum Operating Temperature: 150 Cel;
SFT1440-TL-H
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 1.5 A;
Sanyo Electric
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 2 A;
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