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SFT1440(TP-FA)

Onsemi

SFT1440(TP-FA) by Onsemi

Onsemi's SFT1440(TP-FA) is a N-CHANNEL FET with 1.5A ID and 20W power dissipation. Ideal for applications requiring high drain current and operating temperatures up to 150 °C, such as power management systems in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,198 parts In-Stock

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Digiode

USA . 943 parts In-Stock

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Kulean Microsystems

USA . 7,646 parts In-Stock

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Problanco Electronics

Mexico . 4,795 parts In-Stock

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TANS Electronics

Latvia . 4,081 parts In-Stock

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SupplyDigital Components

Austria . 3,695 parts In-Stock

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Corphita

USA . 847 parts In-Stock

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UHIMA Technologies

Türkiye . 703 parts In-Stock

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Corohmni

South Africa . 144 parts In-Stock

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Overview

Unleash the power of innovation with the SFT1440(TP-FA) by Onsemi. As a leading manufacturer in the industry, Onsemi's Power Field Effect Transistors (FETs) are known for their superior quality and reliability. The SFT1440(TP-FA) offers exceptional performance and efficiency, making it ideal for a wide range of applications. Whether you're looking to enhance your electronic devices or optimize power management systems, this N-CHANNEL FET is the perfect solution. Trust Onsemi to deliver cutting-edge technology that exceeds expectations. Upgrade your projects with the SFT1440(TP-FA) and experience the difference today!

Feature Benefit Bullets

Polarity or Channel Type - N-CHANNEL

N-CHANNEL FETs are known for their high efficiency and fast switching capabilities, making them ideal for a wide range of applications.

Configuration - SINGLE

SINGLE configuration FETs are simpler to use and interface with other components, making them suitable for smaller projects or designs.

Surface Mount - YES

Surface mount FETs are easier to integrate onto circuit boards, saving space and enabling compact designs.

Operating Mode - ENHANCEMENT MODE

ENHANCEMENT MODE FETs offer high input impedance and low output impedance, providing better control and efficiency in various circuit applications.

Maximum Drain Current (Abs) (ID) - 1.5 A

With a maximum drain current of 1.5A, this FET can handle high current loads, making it suitable for power applications.

Maximum Power Dissipation (Abs) - 20 W

With a maximum power dissipation of 20W, this FET can handle moderate power levels efficiently, ensuring reliable operation.

Field Effect Transistor Technology - METAL-OXIDE SEMICONDUCTOR

METAL-OXIDE SEMICONDUCTOR FETs are known for their high-speed performance and low power consumption, making them ideal for power management applications.

Maximum Operating Temperature - 150 °C

With a maximum operating temperature of 150 °C, this FET can withstand high temperatures, providing reliability in demanding environments.

Technical Specifications

Power Field Effect Transistors (FET) SFT1440(TP-FA) attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

1.5 A

Maximum Drain Current (ID):

1.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Trade Compliance

SFT1440(TP-FA) Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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